<1 Ω CMOS, 1.8 V to 5.5 V,
Dual SPST Switches
ADG821/ADG822/ADG823
Rev. A
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Fax: 781.461.3113 ©2002–2008 Analog Devices, Inc. All rights reserved.
FEATURES
0.8 Ω maximum on resistance @ 125°C
0.3 Ω maximum on resistance flatness @ 125°C
1.8 V to 5.5 V single supply
200 mA current carrying capability
Automotive temperature range: −40°C to +125°C
Rail-to-rail operation
8-lead MSOP
33 ns switching times
Typical power consumption: <0.01 μW
TTL-/CMOS-compatible inputs
Pin-compatible with the ADG721/ADG722/ADG723
APPLICATIONS
Power routing
Battery-powered systems
Communication systems
Data acquisition systems
Audio and video signal routing
Cellular phones
Modems
PCMCIA cards
Hard drives
Relay replacement
FUNCTIONAL BLOCK DIAGRAMS
ADG821
SW ITCHE S S HOW N F OR
A LOGIC 0 I NP UT.
IN1
S1
D1
IN2 S2
D2
0
2851-001
ADG822
SW I T CHES S HO W N F O R
A LOGIC 0 I NP UT.
IN1
S1
D1
IN2 S2
D2
0
2851-002
Figure 1. Figure 2.
ADG823
SWITCHES SHOWN FOR
A LOGIC 0 INPUT.
IN1
S1
D1
IN2 S2
D2
02851-003
Figure 3.
GENERAL DESCRIPTION
The ADG821/ADG822/ADG823 are monolithic CMOS single-
pole, single-throw (SPST) switches. These switches are designed
on an advanced submicron process that provides low power
dissipation, yet gives high switching speed, low on resistance,
and low leakage currents.
The ADG821/ADG822/ADG823 are designed to operate from
a single 1.8 V to 5.5 V supply, making them ideal for use in
battery-powered instruments.
Each switch of the ADG821/ADG822/ADG823 conducts
equally well in both directions when on. The ADG821/
ADG822/ADG823 contain two independent SPST switches.
The ADG821 and ADG822 differ only in that both switches are
normally open and normally closed, respectively. In the ADG823,
Switch 1 is normally open and Switch 2 is normally closed. The
ADG823 exhibits break-before-make switching action.
The ADG821/ADG822/ADG823 are available in an
8-lead MSOP.
PRODUCT HIGHLIGHTS
1. Very Low On Resistance: 0.5 Ω typ.
2. On Resistance Flatness (RFLAT(ON)): 0.15 Ω typ.
3. Automotive Temperature Range: −40°C to +125°C.
4. Current Carrying Capability: 200 mA.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. 8-Lead MSOP.
ADG821/ADG822/ADG823
Rev. A | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagrams ............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions ..............................6
Typical Performance Characteristics ..............................................7
Test Circuits ........................................................................................9
Terminology .................................................................................... 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
4/08—Rev. 0 to Rev. A
Updated Format .................................................................. Universal
Added Table 6 .................................................................................... 6
Updated Outline Dimensions ....................................................... 12
Changes to Ordering Guide .......................................................... 12
8/02—Revision 0: Initial Version
ADG821/ADG822/ADG823
Rev. A | Page 3 of 12
SPECIFICATIONS
VDD = 5 V ± 10%, GND = 0 V; TA = −40°C to +125°C, unless otherwise noted.
Table 1.
Parameter 25°C
−40°C to
+85°C
−40°C to
+125°C1Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.5 Ω typ VS = 0 V to VDD, IS = 100 mA, see Figure 17
0.6 0.7 0.8 Ω max
On Resistance Match Between 0.16 Ω typ VS = 0 V to VDD, IS = 100 mA
Channels (∆RON) 0.2 0.25 0.28 Ω max
On Resistance Flatness (RFLAT(ON)) 0.15 Ω typ VS = 0 V to VDD, IS = 100 mA
0.23 0.26 0.3 Ω max
LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage, IS (Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18
±0.25 ±3 ±25 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 18
±0.25 ±3 ±25 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 19
±0.25 ±3 ±25 nA max
DIGITAL INPUTS
Input High Voltage, VINH 2.0 V min
Input Low Voltage, VINL 0.8 V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 33 ns typ RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20
45 48 52 ns max
tOFF 11 ns typ RL = 50 Ω, CL = 35 pF, VS = 3 V, see Figure 20
16 19 21 ns max
Break-Before-Make Time Delay, tBBM 32 ns typ RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V,
(ADG823 Only) 1 ns min see Figure 21
Charge Injection 15 pC typ VS = 2.5 V; RS = 0 Ω, CL = 1 nF, see Figure 22
Off Isolation −52 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23
Channel-to-Channel Crosstalk −82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 24
Bandwidth −3 dB 24 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 25
CS (Off) 85 pF typ f = 1 MHz
CD (Off) 98 pF typ f = 1 MHz
CD, CS (On) 230 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V, digital inputs = 0 V or 5.5 V
IDD 0.001 µA typ
1.0 2.0 A max
1 On resistance parameters tested with IS = 10 mA.
2 Guaranteed by design, not subject to production test.
ADG821/ADG822/ADG823
Rev. A | Page 4 of 12
VDD = 2.7 V to 3.6 V, GND = 0 V, TA = −40°C to +125°C, unless otherwise noted.
Table 2.
Parameter 25°C
−40°C to
+85°C
−40°C to
+125°C1Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.7 Ω typ VS = 0 V to VDD, IS = 100 mA, see Figure 17
1.4 1.5 1.6 Ω max
On Resistance Match Between 0.16 Ω typ VS = 0 V to VDD, IS = 100 mA
Channels (∆RON) 0.2 0.25 0.28 Ω max
On Resistance Flatness (RFLAT(ON)) 0.3 0.33 Ω typ VS = 0 V to VDD, IS = 100 mA
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage, IS (Off) ±0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V, see Figure 18
±0.25 ±3 ±15 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V, see Figure 18
±0.25 ±3 ±25 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or 3.3 V, see Figure 19
±0.25 ±3 ±25 nA max
DIGITAL INPUTS
Input High Voltage, VINH 2.0 V min
Input Low Voltage, VINL 0.8 V max
Input Current
IINL or IINH 0.005 A typ VIN = VINL or VINH
±0.1 A max
Digital Input Capacitance, CIN 4 pF typ
DYNAMIC CHARACTERISTICS2
tON 48 ns typ RL = 50 Ω, CL = 35 pF, VS = 1.5 V, see Figure 20
67 74 78 ns max
tOFF 12 ns typ RL = 50 Ω, CL = 35 pF, VS = 1.5 V, see Figure 20
18 20 23 ns max
Break-Before-Make Time Delay, tBBM 40 ns typ RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 1.5 V,
(ADG823 Only) 1 ns min see Figure 21
Charge Injection ±2 pC typ VS = 1.5 V; RS = 0 Ω, CL = 1 nF, see Figure 22
Off Isolation −52 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 23
Channel-to-Channel Crosstalk −82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 24
Bandwidth −3 dB 24 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 25
CS (Off) 85 pF typ f = 1 MHz
CD (Off) 98 pF typ f = 1 MHz
CD, CS (On) 230 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 3.6 V, digital inputs = 0 V or 3.6 V
IDD 0.001 A typ
1.0 2.0 A max
1 On resistance parameters tested with IS = 10 mA.
2 Guaranteed by design, not subject to production test.
ADG821/ADG822/ADG823
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND −0.3 V to +7 V
Analog Inputs1 −0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
Digital Inputs1 −0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
Peak Current, S or D 400 mA (pulsed at 1 ms,
10% duty cycle maximum)
Continuous Current, S or D 200 mA
Operating Temperature Range
Automotive −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature (TJ max) 150°C
Package Power Dissipation (TJ max − TA)/θJA
8-Lead MSOP Thermal Impedance
θJA 206°C/W
θJC 44°C/W
Lead Temperature,
Soldering (10 sec)
300°C
IR Reflow, Peak Temperature (<20
sec)
235°C
1 Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 4. Truth Table for the ADG821/ADG822
ADG821 INx ADG822 INx Switch x Condition
0 1 Off
1 0 On
Table 5. Truth Table for the ADG823
IN1 IN2 Switch S1 Switch S2
0 0 Off On
0 1 Off Off
1 0 On On
1 1 On Off
ESD CAUTION
ADG821/ADG822/ADG823
Rev. A | Page 6 of 12
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
S1 8VDD
2
D1 7IN1
3
IN2 6D2
4
GND 5S2
ADG821/
ADG822/
ADG823
TOP VIEW
(Not to Scale)
0
2851-004
Figure 4. Pin Configuration
Table 6. Pin Function Descriptions
Pin No. Mnemonic Description
1 S1 Source Terminal. This pin can be an input or output.
2 D1 Drain Terminal. This pin can be an input or output.
3 IN2 Logic Control Input.
4 GND Ground (0 V) Reference.
5 S2 Source Terminal. This pin can be an input or output.
6 D2 Drain Terminal. This pin can be an input or output.
7 IN1 Logic Control Input.
8 VDD Most Positive Power Supply Potential.
ADG821/ADG822/ADG823
Rev. A | Page 7 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
0.8
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
012345
ON RES I ST ANCE ()
V
D
, V
S
(V)
V
DD
= 3. 3V
V
DD
= 3. 0V
V
DD
= 2. 7V
V
DD
= 4. 5V
V
DD
= 5. 0V
V
DD
= 5.5V
T
A
= 25°C
02851-005
Figure 5. On Resistance vs. VD, VS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
001.81.61.41.21.00.80.60.40.2
ON RES I ST ANCE ()
V
D
, V
S
(V)
T
A
= 25°C
V
DD
= 1.8V
02851-006
Figure 6. On Resistance vs. VD, VS; VDD = 1.8 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
005.04.54.03.53.02.52.01.51.00.5
ON RES I ST ANCE ()
V
D
, V
S
(V)
V
DD
= 5V
+125°C
+85°C
+25°C
–40°C
02851-007
Figure 7. On Resistance vs. VD, VS for Different Temperatures, VDD = 5 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0032.52.01.51.00.5
ON RES I ST ANCE ()
V
D
, V
S
(V)
V
DD
= 3V
+125°C
+85°C
+25°C
–40°C
.0
02851-008
Figure 8. On Resistance vs. VD, VS for Different Temperatures, VDD = 3 V
8
7
6
5
4
3
2
0
1
–1 0 120 12510080604020
CURRENT ( n A)
TEM PE RAT URE ( ° C)
V
DD
= 5V, 3V
I
S
, I
D
(ON)
I
D
(OFF )
I
S
(OFF)
02851-009
Figure 9. Leakage Current vs. Temperature
200
150
100
50
0
–50
–100
–150
–200 054.54.03.53.02.52.01.51.00.5
CHARGE INJECT IO N ( pC)
V
S
(V)
V
DD
= 5V
V
DD
= 3V
T
A
= 25°C
.0
02851-010
Figure 10. Charge Injection vs. Source Voltage
ADG821/ADG822/ADG823
Rev. A | Page 8 of 12
60
50
40
30
20
10
0
–40 120100806040200–20
TIME (ns)
TEMPERATURE (°C)
TA = 25° C
t
ON
t
OFF
VDD = 3V
VDD = 5V
VDD = 3V, 5V
02851-011
Figure 11. tON/tOFF vs. Temperature
0
–70
–60
–50
–40
–30
–20
–10
0.2 100101
ATT ENUATI ON (dB)
FREQUENCY ( M Hz )
V
DD
= 3V, 5V
T
A
= 25° C
02851-012
Figure 12. Off Isolation vs. Frequency
0
–9
–7
–8
–6
–5
–4
–3
–2
–1
0.1 100101
ATT ENUATI ON (dB)
FREQUENCY ( M Hz )
V
DD
= 3V, 5V
T
A
= 25° C
02851-013
Figure 13. On Response vs. Frequency
–
10
–110
–100
–80
–90
–70
–60
–50
–40
–30
–20
0.1 100101
ATT ENUATI ON (dB)
FREQUENCY ( M Hz )
02851-014
Figure 14. Crosstalk vs. Frequency
1.8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1654320
LO GI C T HRESHOLD VO LTAGE ( V )
V
DD
(V)
V
IN
RI SING
V
IN
FALLING
02851-015
Figure 15. Logic Threshold Voltage vs. Supply Voltage
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
100 10k1k20
THD (%)
FREQ UE NCY (Hz )
V
S
= 5V
V p-p = 2V
R
L
= 600
02851-016
Figure 16. THD vs. Frequency
ADG821/ADG822/ADG823
Rev. A | Page 9 of 12
TEST CIRCUITS
SD
VS
IDS
V1
RON = V1/IDS
0
2851-017
SD
V
S
A A
V
D
I
S
(OFF) I
D
(OFF)
02851-018
SD
A
V
D
I
D
(ON)
NC
NC = NO CONNECT
0
2851-019
Figure 17. On Resistance Figure 18. Off Leakage Figure 19. On Leakage
VSIN
SD
GND
RL
50
CL
35pF
VOUT
VDD
0.1µF
V
DD
ADG821
ADG822
VIN
VIN
VOUT
tON tOFF
50% 50%
90% 90%
50% 50%
02851-020
Figure 20. Switching Times
V
S2
IN1,
IN2
V
IN
S2 D2
V
S1
S1 D1
GND
R
L2
50
C
L2
35pF
V
OUT2
V
OUT1
V
DD
0.1µF
V
DD
V
IN
V
OUT1
V
OUT2
t
BBM
t
BBM
50% 50%
90%
90%
90%
90%
0V
0V
0V
R
L1
50
C
L1
35pF
02851-021
Figure 21. Break-Before-Make Time Delay, tBBM (ADG823 only)
IN
V
OUT
V
IN
V
OUT
V
OUT
SW OFFSW O N
Q
INJ
= C
L
× V
OUT
SD
V
DD
V
DD
V
S
R
S
GND
C
L
1nF
02851-022
Figure 22. Charge Injection
ADG821/ADG822/ADG823
Rev. A | Page 10 of 12
VOUT
50
NETWORK
ANALYZER
RL
50
IN
VIN
S
D
50VS
OFF ISOLATION = 20 log VOUT
VS
VDD
0.1µF
V
DD
GND
02851-023
Figure 23. Off Isolation
CHANNEL- T O-CHANNE L CROSSTALK = 20 lo g V
OUT
GND
S1
D
S2
IN
V
OUT
NETWORK
ANALYZER
R
L
50
R
50
50
V
S
V
S
V
DD
0.1µF
V
DD
02851-024
Figure 24. Channel-to-Channel Crosstalk
V
OUT
50
NETWORK
ANALYZER
R
L
50
IN
V
IN
S
D
INSERTION LOSS = 20 log V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
V
S
V
DD
0.1µF
V
DD
GND
02851-025
Figure 25. Bandwidth
ADG821/ADG822/ADG823
Rev. A | Page 11 of 12
TERMINOLOGY
VDD
Most positive power supply potential.
GND
Ground (0 V) reference.
IDD
Positive supply current.
S
Source terminal. May be an input or output.
D
Drain terminal. May be an input or output.
IN
Logic control input.
RON
Ohmic resistance between Terminal D and Terminal S.
ΔRON
On resistance match between any two channels (that is,
RON max − RON min).
RFLAT(ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured over the specified
analog signal range.
IS (Off)
Source leakage current with the switch off.
ID (Off)
Drain leakage current with the switch off.
ID, IS (On)
Channel leakage current with the switch on.
VD, VS
Analog voltage on Terminal D and Terminal S.
VINL
Maximum input voltage for Logic 0.
VINH
Minimum input voltage for Logic 1.
IINL (IINH)
Input current of the digital input.
CS (Off)
Off switch source capacitance.
CD (Off)
Off switch drain capacitance.
CD, CS (On)
On switch capacitance.
tON
Delay between applying the digital control input and the output
switching on.
tOFF
Delay between applying the digital control input and the output
switching off.
tBBM
Off time or on time measured between the 90% points of both
switches, when switching from one address state to another.
Charge Injection
Charge injection is a measure of the glitch impulse transferred
from the digital input to the analog output during switching.
Crosstalk
Crosstalk is a measure of unwanted signal that is coupled
through from one channel to another as a result of parasitic
capacitance.
Off Isolation
A measure of unwanted signal coupling through an off switch.
Bandwidth
The frequency at which the output is attenuated by −3 dBs.
On Response
The frequency response of the on switch.
Insertion Loss
The loss due to the on resistance of the switch.
ADG821/ADG822/ADG823
Rev. A | Page 12 of 12
OUTLINE DIMENSIONS
COMPLIANT TO JEDEC STANDARDS MO-187-AA
0.80
0.60
0.40
8°
0°
4
8
1
5
PIN 1 0.65 BSC
SEATING
PLANE
0.38
0.22
1.10 MAX
3.20
3.00
2.80
COPLANARITY
0.10
0.23
0.08
3.20
3.00
2.80
5.15
4.90
4.65
0.15
0.00
0.95
0.85
0.75
Figure 26. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
ADG821BRM −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SQB
ADG821BRM-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SQB
ADG821BRMZ1
−40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S0P
ADG821BRMZ-REEL71
−40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S0P
ADG822BRM −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SRB
ADG822BRM-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SRB
ADG822BRM-REEL7 −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SRB
ADG822BRMZ1
−40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S1J
ADG822BRMZ-REEL71
−40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 S1J
ADG823BRM −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SSB
ADG823BRM-REEL −40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SSB
ADG823BRMZ1
−40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SSB#
ADG823BRMZ-REEL71
−40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SSB#
1 Z = RoHS Compliant Part, # denotes RoHS compliant product may be top or bottom marked.
©2002–2008 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D02851-0-4/08(A)
