EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES * Superectifier structure for high reliability condition * Cavity-free glass-passivated junction Superectifier(R) * Ideal for automated placement * Ultrafast reverse recovery time * Low switching losses, high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C GF1 (DO-214BA) * AEC-Q101 qualified - Automotive ordering code: base P/NHE3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 30 A trr 50 ns VF 1.0 V TJ max. 175 C Package GF1 (DO-214BA) Diode variations Single TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: GF1 (DO-214BA), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ("X" denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code EGF1A EGF1B EGF1C EGF1D EA EB EC ED UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TL = 125 C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -65 to +175 C Operating junction and storage temperature range V Revision: 25-Aug-17 Document Number: 88579 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A VF TA = 25 C Maximum DC reverse current at rated DC blocking voltage SYMBOL TA = 125 C EGF1A EGF1B (1) EGF1C EGF1D UNIT 1.0 V 5.0 IR (1) A 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL EGF1B EGF1C 85 RJL (1) 30 RJA Typical thermal resistance EGF1A (1) EGF1D UNIT C/W Note Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.104 67A 1500 7" diameter plastic tape and reel EGF1D-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel EGF1DHE3_A/I (1) 0.104 I 6500 13" diameter plastic tape and reel EGF1D-E3/67A Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified) 30 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0.5 Resistive or Inductive Load P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 25-Aug-17 Document Number: 88579 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor 70 10 TJ = 150 C TJ = 25 C 1 0.1 Pulse Width = 300 s 1 % Duty Cycle 0.01 0.2 50 40 30 20 10 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Leakage Current (A) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 60 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 100 TJ = 150 C 10 TJ = 100 C 1 0.1 TJ = 25 C 0.01 0 20 40 60 80 10 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GF1 (DO-214BA) Cathode Band Mounting Pad Layout 0.076 (1.93) MAX. 0.066 (1.68) 0.066 (1.68) MIN. 0.040 (1.02) 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 (1.52) MIN. 0.118 (3.00) 0.108 (2.74) 0.100 (2.54) 0.098 (2.49) 0.060 (1.52) 0.006 (0.152) TYP. 0.220 (5.58) REF. 0.114 (2.90) 0.094 (2.39) 0.030 (0.76) 0.226 (5.74) 0.196 (4.98) Revision: 25-Aug-17 Document Number: 88579 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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