T820147504DH - Powerex - Datasheet.Live

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR

www.pwrx.com 750 Amperes Average

2400 Volts

Revision Date: 04/20/2009

T820

750A

T820 750A (Outline Drawing)

Ordering Information:

Select the complete 12 digit module part number from the table below.

Example: T820167504DH is a 1600V 750A Phase Control SCR.

Voltage Current Turn-off Tim e Gate Current Lead

Type VRRM

(Volts) IT(av)

(A) tq

(µsec) IGT

(mA) Code

T820 02

through

24

200V

through

2400V

75

750A

0

200 µsec

(Typical)

4

150 mA

DH

12”

Description:

Powerex Silicon Controlled

Rectifiers (SCR) are designed for

phase control applications. These

are all-diffused, Press-Pak,

hermetic Pow-R-Disc devices

employing the field proven

amplifying gate.

Features:

 Low On-State Voltage

 High di/dt Capability

 High dv/dt Capability

 Hermetic Packaging

 Excellent Surge and I2t Ratings

Applications:

 Power Supplies

 Motor Control

T820 750A Phase Control SCR

750 Amperes Average, 2400 Volts

http://store.iiic.cc/

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR

www.pwrx.com 750 Amperes Average

2400 Volts

Revision Date: 04/20/2009

T820

750A

Absolute Maximum Ratings

Characteristics Symbol Units

Non-Repetitive Transient Peak Reverse Blocking Voltage VRSM V

RRM + 100V Volts

RMS On-State Current, TC = 70°C IT(RMS) 1175 Amperes

A

verage Current 180° Sine Wave, TC = 70°C IT(AV) 750 Amperes

RMS On-State Current, TC = 55°C IT(RMS) 1500 Amperes

A

verage Current 180° Sine Wave, TC = 55°C IT(AV) 960 Amperes

Peak One Cycle Surge On-State Current (Non-Repetitive) 60 Hz ITSM 12,000 Amperes

Peak One Cycle Surge On-State Current (Non-Repetitive) 50 Hz ITSM 10,950 Amperes

Critical Rate-of-rise of On-State Current (Non-Repetitive) di/dt 400 A/μsec

Critical Rate-of-rise of On-State Current (Repetitive) di/dt 150 A/μsec

I

2

t (for Fusing) for One Cycle, 60 Hz I

2

t 600,000 A

2

sec

Peak Gate Power Dissipation PGM 16 Watts

A

verage Gate Power Dissipation PG(av) 3 Watts

Operating Temperature TJ -40 to +125 °C

Storage Temperature Tstg -40 to +150 °C

A

pproximate Weight 8 oz.

227 g

Mounting Force 3000 to 3500 lb.

1360 to 1590 kg.

Information presented is based upon manufacturers testing and projected capabilities.

This information is subject to change without notice.

The manufacturer makes no claim as to the suitabilit y of use, reliability, capability,

or future availability of this product.

http://store.iiic.cc/

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR

www.pwrx.com 750 Amperes Average

2400 Volts

Revision Date: 04/20/2009

T820

750A

Thermal Characteristics

Maximum Thermal Resistance, Double Sided Cooling Max. Units

Junction-to-Case

Case-to-Sink RΘ(J-C)

RΘ

(

C-S

)

0.037

0.020

°C/W

Electrical Characteristics, TJ=25° C unless otherwise specified

Characteristics Symbol Test Conditions Min.

Typ. Max.

Units

Repetitive Peak Reverse Leakage Current IRRM T

J=125°C, VR = VRRM 60 mA

Repetitive Peak Forward Leakage Current IDRM T

J=125°C, VD = VDRM 60 mA

Peak On-State Voltage VTM I

FM=1500A peak,

Duty Cycle < 0.1 %

1.65 V

Threshold Voltage, Low-level

Slope Resistance, Low-level

V(TO)1

rT1 TJ = 125°C, I = 15%IT(AV) to

π

IT(AV) 0.97268

0.4950

V

mΩ

Threshold Voltage, High-level

Slope Resistance, High-level

V(TO)2

rT2 TJ = 125°C, I =

π

IT(AV) to ITSM 1.2785

0.3365

V

mΩ

VTM Coefficients, Low-level

TJ = 125°C, I = 15%IT(AV) to πIT(AV)

VTM = A+ B Ln(I) +C(I) + D Sqrt(I)

A =

B =

C =

D =

0.50605

0.073285

2.864 E-04

0.007176

VTM Coefficients, High-level

TJ = 125°C, I = πIT(AV) to ITSM

VTM = A+ B Ln(I) +C(I) + D Sqrt(I)

A =

B =

C =

D =

-10.717

2.2006

7.43 E-04

-0.12418

Typical Turn-On Time ton IT = 1000A, VD = 600 V 5 µs

Typical Turn-Off Time tq T

j = 125°C, IT = 250A,

diR/dt = 50A/µs Reapplied

dv/dt = 20 V/µs Linear to 80% VDRM

200

µs

Minimum Critical dv/dt – Exponential to VDRM dv/dt TJ = 125°C 300 V/µs

Gate Trigger Current IGT TJ = 25°C, VD = 12 V 150 mA

Gate Trigger Voltage VGT TJ = 25°C, VD = 12 V 3.0 V

Non-Triggering Gate Voltage VGDM TJ = 125°C, VD = VDRM 0.15 V

Peak Forward Gate Current IGTM 4 A

Peak Reverse Gate Voltage VGRM 5 V

http://store.iiic.cc/

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR

www.pwrx.com 750 Amperes Average

2400 Volts

Revision Date: 04/20/2009

T820

750A

0

1

2

3

4

5

10 100 1000 10000 100000

On-State Voltage - Vtm - Volts

Instantaneous On-State Current - Itm - Amperes

Maximum On-S tate Forw ard Voltage Drop

( Tj = 125 °C )

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.0001 0.001 0.01 0.1 1 10

Thermal Impedance -Rjc - °C/W

Time -t - Seconds

Maximum Transient Ther mal Im pedance

(Junct ion to Case)

15°

30°

60°

90°

120° 180°

0

200

400

600

800

1000

1200

1400

1600

0 100 200 300 400 500 600 700 800

Maximum Power Dissi pation Per SCR - W atts

Average On-Stat e Current - It(av) - Amperes

Maximum On-State Pow er Dissipation

(Si nusoidal Waveform)

15°

30° 60°

90° 120° 180°

50

60

70

80

90

100

110

120

130

0 100 200 300 400 500 600 700 800 900

Max. Case Temperature -Tcase -°C

Average On-Stat e Current - It(av) - Amperes

Maximum Al low able Case Temper ature

(Si nusoida l Waveform)

15°

30°

60°

90° 120°

180°

270° 360°

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 200 400 600 800 1000 1200 1400

Maximum Power Dissi pation Per SCR - W atts

Average On-State Current - It (av) - Amper es

Maximum On-State Power Dissipation

(Rectangu lar Waveform)

15° 30° 60° 90° 120° 180° 270° 360°C

40

50

60

70

80

90

100

110

120

130

0 200 400 600 800 1000 1200 1400

Max. Case Temperature -Tcase -°C

Average On-Stat e Current - It(av) - Amperes

Maximum A llow able Case Temper atur e

(Rectangu lar Waveform)

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