ABB Semiconductor has a well established reputation in the
field of high power semiconductors for switching devices. This
is reflected in the most complete product portfolio by any
supplier of high power semiconductors. The portfolio covers a
wide range of Bipolar and BiMOS devices such as Thyristors,
Diodes, GTOs, IGBTs and IGCTs with operation voltages of up
to 8.5 kV for the Industrial, Traction and Energy Management
markets.
ABB Semiconductor IGBT (Insulated Gate Bipolar Transistor)
high power modules (HiPak™) and press-packs (StakPak™)
are manufactured using SPT™ chipsets developed and pro-
duced at our own facilities in Switzerland. The goal is to make
the modules and press-packs from ABB Best-in-Class in terms
of switching performance, ruggedness and reliability. The
SPT™ chipsets are available for manufacturers of semicon-
ductor power device packages targeting demanding appli-
cations in the field of power electronics.
1200 V IGBT modules are widely used in household equipment
and in motor drives for renewables (solar & wind), battery
back-ups systems (UPS) and electrical vehicles. The various
requirements in package design and output power is suppor-
ted by the broad number of chipsets for 1200 V offered by
ABB Semiconductors (see table).
1700 V IGBT modules are used in various low and medium
voltage drives (LVD/MVD) mainly for industrial applications and
traction applications. The range of modules serving these
applications is huge. ABB Semiconductors is serving both the
industrial market and the traction market with the largest single
switch; the 1.7 kV / 3.6 kA module rated at 150°C suitable for
instance for high power induction heating and smelting.
Smaller industrial packages are also common and ABB is
serving this part of the 1.7 kV market with planar technology
IGBT and Diode chipsets.
Higher voltage IGBT and Diode chipsets are mainly used in
very high power applications requiring expertise in packaging
and handling of the chips prior to packaging. ABB Semicon-
ductors offer chipsets in the range from 2.5 kV to 6.5 kV in
limited volumes for customer specific applications.
IGBT and Diode dies
ABB Semiconductors
ABB IGBT and Diode dies from state-
of-the-art SPT™ planar technology
platform.
Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs
Power and productivity
for a better world™
6000
5000
4000
3000
2000
1000
0
250
200
150
100
50
0
-50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IC (A), VGE (V)
Time (μs)
VCE (V)
Fig. 2 Example of a normal switch-on condition for an ABB SPT+ 1.7 kV IGBT chip.
The IGBT and diode chipsets offered in the full voltage range
from 1.2 kV to 6.5 kV are all available for solder mount-down
and wire bonding in modules, though the larger die may also
be supplied with metallization suitable for pressure assembly
(i.e. in press-packs). This brochure outlines the currently avai-
lable die types and their salient features.
Product Description
ABB produces IGBT and fast recovery diode dies in the vol-
tage range from 1.2 kV to 6.5 kV based on the well established
SPT™ (Soft Punch-Through) technology platform. SPT™
technology is characterised by very controlled (“soft”) switching
performances and high Safe Operating Areas (SOA) together
with positive temperature coefficients for reliable parallel
operation.
The newer generation of chips, known as SPT+, retains all the
features of SPT™ but allows a 20 – 30% reduction in VCE SAT,
depending on voltage class.
Fig. 2 shows the on-state curves of the newest 1.7 kV SPT+
IGBT chips at different temperatures. The typical on-state vol-
tage drop (VCE ON) at nominal current and Tj = 150°C is 3.1 V.
The SPT+ IGBT shows a positive temperature coefficient of
VCE ON, starting already at low currents, which enables a good
current sharing capability between the individual chips in the
module.
Very high SOA is illustrated in Fig.3 through SSCM (Switching
Self-Clamping Mode) by which a chip exceeds its turn-off
specification in terms of both current, voltage, stray inductance
and RG OFF MIN.
The SPT™ technology platform covers different chip manu-
facturing technologies to obtain different functionalities of the
chips, still preserving the high ruggedness and soft switching
throughout the whole platform which is the trademark of the
technology. The high voltage ( 2.5 kV) SPT+ chipset techno-
logy has the lowest VCE SAT (@ Tj max) in comparison with any
other IGBT technology on the market and by voltage class.
Configurations
Please be aware that on wafer level (wafer dies or sawn wafer
die) testing can only be performed at room temperature level.
Therefore for these configurations all values at high tempera-
ture can only be guaranteed on a statistical base. For 2.5 kV
and above dies are only sold in waffle packs as high tempera-
ture and high voltage performance becomes the predominant
product feature. These dies are tested for functionality at full
voltage at maximum rated temperature.
Fig. 3 Example of an extreme turn-off with an ABB SPTTM IGBT chip sustaining
both dynamic and static avalanche
4.5 kV SPT+ IGBT turn-off at 5.3 x nominal current:
VDC = 3600V, IC = 200A, 125°C, RG = 68Ω, Ls = 4μH, VSSCM = 5200V,
PPEAK = 1 MW/cm2
SSCM
Dynamic
Avalanche
VGE
VCE
IC= 5.3 x Inom
Nominal Current
7200
IC (A)
VCE (V)
6000
4800
3600
2400
1200
0
012345
125°C
150°C
25°C
Price and delivery
Information on prices and delivery conditions may be obtained
from our local Sales Representative.
Chip Outlines
Part number Thickness
μm
Type Size A x B
mm
VCES (V)
IGBTs
1.2 kV
5SMX 76E1280
5SMX 86E1280
5SMX 76H1280
5SMX 86H1280
5SMX 76K1280
5SMX 86K1280
5SMX 76L1280
5SMX 86L1280
5SMY 76H1280
5SMY 86H1280
5SMY 76J1280
5SMY 86J1280
5SMY 76K1280
5SMY 86K1280
5SMY 76M1280
5SMY 86M1280
1.7 kV
5SMX 76K1701
5SMX 86K1701
5SMX 76M1701
5SMX 86M1701
5SMY 12M1721
2.5 kV
5SMX 12L2510
5SMX 12L2511
3.3 kV
5SMX 12M3300
5SMY 12M3300
4.5 kV
5SMY 12L4500
5SMY 12M4500
5SMY 12N4500
6.5 kV
5SMX 12M6500
5SMY 12M6500
SPT
SPT
SPT
SPT
SPT+
SPT+
SPT+
SPT+
SPT
SPT
SPT+
SPT
SPT
SPT
SPT+
SPT+
SPT+
SPT+
SPT
SPT+
6.5 x 6.6
9.1 x 9.0
11.0 x 11.0
12.6 x 12.6
9.1 x 9.1
10.2 x 10.2
11.2 x 11.9
13.5 x 13.5
11.9 x 11.9
13.6 x 13.6
13.6 x 13.6
12.4 x 12.4
12.4 x 12.4
13.6 x 13.6
13.6 x 13.6
12.8 x 12.8
13.6 x 13.6
14.3 x 14.3
13.6 x 13.6
13.6 x 13.6
140
140
140
140
140
140
140
140
210
210
205
305
310
385
380
520
525
530
670
675
IC (A) ICM (A) Max. Dies per Wafer (W)
or Tray (T)
332 (W)
166 (W)
112 (W)
82 (W)
166 (W)
130 (W)
98 (W)
71 (W)
93 (W)
69 (W)
25 (T)
36 (T)
36 (T)
25 (T)
25 (T)
25 (T)
25 (T)
25 (T)
25 (T)
25 (T)
1200
1200
1200
1200
1200
1200
1200
1200
1700
1700
1700
2500
2500
3300
3300
4500
4500
4500
6500
6500
25
50
75
100
57
75
100
150
75
100
150
50
54
50
62.5
42
50
55
25
31.25
50
100
150
200
114
150
200
300
150
200
300
100
108
100
125
84
100
110
50
63
VCEsat (V)
typ. 125°C
2.35
2.2
2.2
2.2
2.1
2.1
2.1
2.2
2.6
2.6
3
3.10
2.70
3.80
3.00
3.70
3.55
3.50
5.40
3.90
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
* TVJ (operational) up to 150°C
Diode IGBT
B
A
Emitter
B
G
A
Outlook
The market for high power switching using IGBT chip based
solutions is growing very fast and development of chip sets
with enhanced performances is being pursued by many com-
panies in the industry. ABB Semiconductors has been in the
forefront of the development for many years and will continue
to be so by focusing on the SPT™ unique possibilities. Next
step is chip sets with even higher temperature ratings and
thus more power per area.
Detailed technical information
Data sheets for all die types are available from our website,
www.abb.com/semiconductors or from our local Sales
Representative. For further information including a data sheet
users guide, testing, shipment, storage, handling and
assembly recommendations please refer to our Application
Note SYA 2059 “Applying IGBT and Diode dies” also available
on the above mentioned website.
* TVJ (operational) up to 150°C
Part number Thickness
μm
Type Size A x B
mm
VRRM (V)
Diodes
1.2 kV
5SLY 76E1200
5SLY 86E1200
5SLY 76F1200
5SLY 86F1200
5SLY 76G1200
5SLY 86G1200
5SLY 76J1200
5SLY 86J1200
1.7 kV
5SLX 76K1711
5SLX 86K1711
5SLX 76M1711
5SLX 86M1711
5SLY 12M1700
2.5 kV
5SLX 12L2507
5SLX 12L2510
3.3 kV
5SLX 12M3301
5SLY 12M3300
4.5 kV
5SLY 12L4500
5SLY 12N4500
6.5 kV
5SLX 12M6500
SPT+
SPT+
SPT+
SPT+
SPT
SPT
SPT+
SPT
SPT
SPT
SPT+
SPT+
SPT+
SPT+
6.3 x 6.3
7.4 x 7.4
8.4 x 8.4
10.0 x 10.0
11.9 x 11.9
13.6 x 13.6
13.5 x 13.5
12.4 x 12.4
12.4 x 12.4
13.6 x 13.6
13.6 x 13.6
12.9 x 12.9
14.3 x 14.3
13.6 x 13.6
350
350
350
350
385
385
190
310
305
385
385
560
570
670
IF (A) VF (V)
typ. 125°C
Max. Dies per Wafer (W)
or Tray (T)
361 (W)
257 (W)
198 (W)
137 (W)
93 (W)
69 (W)
25 (T)
36 (T)
36 (T)
25 (T)
25 (T)
25 (T)
25 (T)
25 (T)
1200
1200
1200
1200
1700
1700
1700
2500
2500
3300
3300
4500
4500
6500
50
75
100
150
150
200
300
108
100
100
125
84
110
50
1.85
1.85
1.85
1.85
1.7
1.7
2.25
2.0
1.8
2.4
2.2
3.4
3.5
3.4
*
*
*
*
*
*
*
*
*
Power and productivity
for a better world™
Doc. No. 5SYA 2033-10 April 2011 / Layout & Artwork by www.29palms.ch / Printed by www.koprint.ch
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg
Switzerland
Tel: +41 58 586 14 19
Fax: +41 58 586 13 06
abbsem@ch.abb.com
www.abb.com/semiconductors
ABB s.r.o.
Semiconductors
Novodvorska 1768/138a
142 21 Praha 4
Czech Republic
Tel: +420 261 306 250
Fax: +420 261 306 308
michal.polasek@cz.abb.com
www.abb.com/semiconductors
