IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPTTM planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the field of high power semiconductors for switching devices. This is reflected in the most complete product portfolio by any supplier of high power semiconductors. The portfolio covers a wide range of Bipolar and BiMOS devices such as Thyristors, Diodes, GTOs, IGBTs and IGCTs with operation voltages of up to 8.5 kV for the Industrial, Traction and Energy Management markets. ABB Semiconductor IGBT (Insulated Gate Bipolar Transistor) high power modules (HiPak TM) and press-packs (StakPak TM) are manufactured using SPT TM chipsets developed and produced at our own facilities in Switzerland. The goal is to make the modules and press-packs from ABB Best-in-Class in terms of switching performance, ruggedness and reliability. The SPT TM chipsets are available for manufacturers of semiconductor power device packages targeting demanding applications in the field of power electronics. 1200 V IGBT modules are widely used in household equipment and in motor drives for renewables (solar & wind), battery back-ups systems (UPS) and electrical vehicles. The various requirements in package design and output power is supported by the broad number of chipsets for 1200 V offered by ABB Semiconductors (see table). 1700 V IGBT modules are used in various low and medium voltage drives (LVD/MVD) mainly for industrial applications and traction applications. The range of modules serving these applications is huge. ABB Semiconductors is serving both the industrial market and the traction market with the largest single switch; the 1.7 kV / 3.6 kA module rated at 150C suitable for instance for high power induction heating and smelting. Smaller industrial packages are also common and ABB is serving this part of the 1.7 kV market with planar technology IGBT and Diode chipsets. Higher voltage IGBT and Diode chipsets are mainly used in very high power applications requiring expertise in packaging and handling of the chips prior to packaging. ABB Semiconductors offer chipsets in the range from 2.5 kV to 6.5 kV in limited volumes for customer specific applications. Power and productivity for a better worldTM The IGBT and diode chipsets offered in the full voltage range from 1.2 kV to 6.5 kV are all available for solder mount-down and wire bonding in modules, though the larger die may also be supplied with metallization suitable for pressure assembly (i.e. in press-packs). This brochure outlines the currently available die types and their salient features. Configurations Please be aware that on wafer level (wafer dies or sawn wafer die) testing can only be performed at room temperature level. Therefore for these configurations all values at high temperature can only be guaranteed on a statistical base. For 2.5 kV and above dies are only sold in waffle packs as high temperature and high voltage performance becomes the predominant product feature. These dies are tested for functionality at full voltage at maximum rated temperature. 125C 25C 6000 IC (A) 4800 150C 3600 2400 1200 0 0 1 2 3 4 5 VCE (V) Fig. 2 Example of a normal switch-on condition for an ABB SPT + 1.7 kV IGBT chip. 250 6000 IC = 5.3 x I nom SSCM 200 5000 Dynamic Avalanche 150 4000 VCE 100 3000 50 VCE (V) IC (A), VGE (V) Product Description ABB produces IGBT and fast recovery diode dies in the voltage range from 1.2 kV to 6.5 kV based on the well established SPT TM (Soft Punch-Through) technology platform. SPT TM technology is characterised by very controlled ("soft") switching performances and high Safe Operating Areas (SOA) together with positive temperature coefficients for reliable parallel operation. The newer generation of chips, known as SPT + , retains all the features of SPT TM but allows a 20 - 30% reduction in V CE SAT, depending on voltage class. Fig. 2 shows the on-state curves of the newest 1.7 kV SPT + IGBT chips at different temperatures. The typical on-state voltage drop (V CE ON) at nominal current and T j = 150C is 3.1 V. The SPT + IGBT shows a positive temperature coefficient of VCE ON, starting already at low currents, which enables a good current sharing capability between the individual chips in the module. Very high SOA is illustrated in Fig.3 through SSCM (Switching Self-Clamping Mode) by which a chip exceeds its turn-off specification in terms of both current, voltage, stray inductance and R G OFF MIN. The SPT TM technology platform covers different chip manufacturing technologies to obtain different functionalities of the chips, still preserving the high ruggedness and soft switching throughout the whole platform which is the trademark of the technology. The high voltage ( 2.5 kV) SPT + chipset technology has the lowest V CE SAT (@ T j max) in comparison with any other IGBT technology on the market and by voltage class. 7200 2000 Nominal Current 0 1000 VGE -50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Time (s) Fig. 3 Example of an extreme turn-off with an ABB SPT TM IGBT chip sustaining both dynamic and static avalanche 4.5 kV SPT + IGBT turn-off at 5.3 x nominal current: VDC = 3600V, IC = 200A, 125C, RG = 68, Ls = 4H, VSSCM = 5200V, PPEAK = 1 MW/cm2 Price and delivery Information on prices and delivery conditions may be obtained from our local Sales Representative. Chip Outlines Diode IGBT A A G Emitter B Part number B Type Size A x B mm Thickness m VCES (V) I C (A) I CM (A) VCEsat (V) typ. 125C Max. Dies per Wafer (W) or Tray (T) SPT 6.5 x 6.6 140 1200 25 50 2.35 332 (W) SPT 9.1 x 9.0 140 1200 50 100 2.2 166 (W) SPT 11.0 x 11.0 140 1200 75 150 2.2 112 (W) SPT 12.6 x 12.6 140 1200 100 200 2.2 82 (W) SPT + 9.1 x 9.1 140 1200 57 114 2.1 166 (W) SPT + 10.2 x 10.2 140 1200 75 150 2.1 130 (W) SPT + 11.2 x 11.9 140 1200 100 200 2.1 98 (W) SPT + 13.5 x 13.5 140 1200 150 300 2.2 71 (W) SPT 11.9 x 11.9 210 1700 75 150 2.6 93 (W) 5SMX 86M1701 SPT 13.6 x 13.6 210 1700 100 200 2.6 69 (W) 5SMY 12M1721 * SPT + 13.6 x 13.6 205 1700 150 300 3 25 (T) 5SMX 12L2510 SPT 12.4 x 12.4 305 2500 50 100 3.10 36 (T) 5SMX 12L2511 SPT 12.4 x 12.4 310 2500 54 108 2.70 36 (T) 5SMX 12M3300 SPT 13.6 x 13.6 385 3300 50 100 3.80 25 (T) 5SMY 12M3300 SPT + 13.6 x 13.6 380 3300 62.5 125 3.00 25 (T) 12.8 x 12.8 520 4500 42 84 3.70 25 (T) 5SMY 12M4500 SPT + SPT + 13.6 x 13.6 525 4500 50 100 3.55 25 (T) 5SMY 12N4500 SPT + 14.3 x 14.3 530 4500 55 110 3.50 25 (T) 5SMX 12M6500 SPT 13.6 x 13.6 670 6500 25 50 5.40 25 (T) 5SMY 12M6500 SPT + 13.6 x 13.6 675 6500 31.25 63 3.90 25 (T) IGBTs 1.2 kV 5SMX 76E1280 * 5SMX 86E1280 * 5SMX 76H1280 * 5SMX 86H1280 * 5SMX 76K1280 * 5SMX 86K1280 * 5SMX 76L1280 * 5SMX 86L1280 * 5SMY 76H1280 * 5SMY 86H1280 * 5SMY 76J1280 * 5SMY 86J1280 * 5SMY 76K1280 * 5SMY 86K1280 * 5SMY 76M1280 * 5SMY 86M1280 * 1.7 kV 5SMX 76K1701 5SMX 86K1701 5SMX 76M1701 2.5 kV 3.3 kV 4.5 kV 5SMY 12L4500 6.5 kV * TVJ (operational) up to 150C Type Size A x B mm Thickness m VRRM (V) I F (A) V F (V) typ. 125C Max. Dies per Wafer (W) or Tray (T) SPT + 6.3 x 6.3 350 1200 50 1.85 361 (W) SPT + 7.4 x 7.4 350 1200 75 1.85 257 (W) SPT + 8.4 x 8.4 350 1200 100 1.85 198 (W) SPT + 10.0 x 10.0 350 1200 150 1.85 137 (W) SPT 11.9 x 11.9 385 1700 150 1.7 93 (W) 5SLX 86M1711 SPT 13.6 x 13.6 385 1700 200 1.7 69 (W) 5SLY 12M1700 * SPT + 13.5 x 13.5 190 1700 300 2.25 25 (T) 5SLX 12L2507 SPT 12.4 x 12.4 310 2500 108 2.0 36 (T) 5SLX 12L2510 SPT 12.4 x 12.4 305 2500 100 1.8 36 (T) 5SLX 12M3301 SPT 13.6 x 13.6 385 3300 100 2.4 25 (T) 5SLY 12M3300 SPT + 13.6 x 13.6 385 3300 125 2.2 25 (T) SPT + SPT + 12.9 x 12.9 560 4500 84 3.4 25 (T) 14.3 x 14.3 570 4500 110 3.5 25 (T) SPT + 13.6 x 13.6 670 6500 50 3.4 25 (T) Diodes 1.2 kV 5SLY 76E1200 * 5SLY 86E1200 * 5SLY 76F1200 * 5SLY 86F1200 * 5SLY 76G1200 * 5SLY 86G1200 * 5SLY 76J1200 * 5SLY 86J1200 * 1.7 kV 5SLX 76K1711 5SLX 86K1711 5SLX 76M1711 2.5 kV 3.3 kV 4.5 kV 5SLY 12L4500 5SLY 12N4500 6.5 kV 5SLX 12M6500 * TVJ (operational) up to 150C Outlook The market for high power switching using IGBT chip based solutions is growing very fast and development of chip sets with enhanced performances is being pursued by many companies in the industry. ABB Semiconductors has been in the forefront of the development for many years and will continue to be so by focusing on the SPT TM unique possibilities. Next step is chip sets with even higher temperature ratings and thus more power per area. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Tel: + 41 58 586 14 19 Fax: + 41 58 586 13 06 abbsem@ch.abb.com www.abb.com/semiconductors Detailed technical information Data sheets for all die types are available from our website, www.abb.com/semiconductors or from our local Sales Representative. For further information including a data sheet users guide, testing, shipment, storage, handling and assembly recommendations please refer to our Application Note SYA 2059 "Applying IGBT and Diode dies" also available on the above mentioned website. ABB s.r.o. Semiconductors Novodvorska 1768/138a 142 21 Praha 4 Czech Republic Tel: +420 261 306 250 Fax: +420 261 306 308 michal.polasek@cz.abb.com www.abb.com/semiconductors Power and productivity for a better worldTM Doc. No. 5SYA 2033-10 April 2011 / Layout & Artwork by www.29palms.ch / Printed by www.koprint.ch Part number