J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J/SSTJ211 -2.5 to -4.5 -25 6 7 J/SSTJ212 -4 to -6 -25 7 15 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 35 @ 100 mA D D D D D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High-Quality Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA). capability. The J/SSTJ210 Series is available in tape-and-reel for automated assembly (see Packaging Information). The TO-226AA (TO-92) plastic package, provides low cost while the TO-236 (SOT-23) package provides surface-mount For similar dual products, see the 2N5911/5912 and U440/441 data sheets. TO-226AA (TO-92) D 1 S 2 TO-236 (SOT-23) D 3 S G 3 1 G SSTJ211 (Z1)* SSTJ212 (Z2)* 2 J210 J211 J212 *Marking Code for TO-236 Top View Top View For applications information see AN104. Document Number: 70234 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 J/SSTJ210 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Notes a. Derate 2.8 mW/_C above 25_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J210 J/SSTJ211 J/SSTJ212 Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -35 -25 VGS(off) VDS = 15 V, ID = 1 nA -1 -3 -2.5 -4.5 -4 -6 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 2 15 7 20 15 40 mA -100 pA Gate Reverse Current IGSS Parameter Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Currenta VGS = -15 V, VDS = 0 V TA = 125_C -25 -25 V -1 -100 -100 -0.5 IG VDG = 10 V, ID = 1 mA -1 Drain Cutoff Current ID(off) VDS = 10 V, VGS = -8 V 1 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 nA pA V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 4 VDS = 15 V, VGS = 0 V f = 1 kHz 7-2 150 6 12 7 200 12 mS 200 mS 4 VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 12 pF 1.5 5 nV Hz NZF Document Number: 70234 S-04028--Rev. E, 04-Jun-01 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 20 IG(on) @ ID 16 12 30 20 8 gfs 10 4 IDSS 0 0 0 -4 -2 -6 -8 10 nA TA = 125_C IG - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 40 100 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 50 10 mA 1 nA IGSS @ 125_C 100 pA 1 mA 1 mA 10 mA 10 pA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA -10 0 4 VGS(off) - Gate-Source Cutoff Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 200 120 120 80 80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 gfs - Forward Transconductance (mS) 160 gos - Output Conductance (mS) rDS(on) - Drain-Source On-Resistance ( ) VGS(off) = -5 V 160 -6 -8 VDS = 10 V f = 1 kHz TA = -55_C 6 25_C 4 125_C 2 0 1 0.1 -10 10 ID - Drain Current (mA) VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics Output Characteristics 15 5 VGS(off) = -2 V VGS = 0 V VGS(off) = -5 V -0.2 V -0.4 V 3 -0.6 V 2 -0.8 V -1.0 V 1 VGS = 0 V 12 ID - Drain Current (mA) 4 ID - Drain Current (A) 20 8 0 -4 -2 16 10 gos 0 12 Common-Source Forward Transconductance vs. Drain Current 200 40 8 VDG - Drain-Gate Voltage (V) -0.5 V -1.0 V 9 -1.5 V -2.0 V 6 -2.5 V -3.0 V 3 -3.5 V -1.2 V 0 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) Document Number: 70234 S-04028--Rev. E, 04-Jun-01 1 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) 1 www.vishay.com 7-3 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics 10 30 VGS(off) = -2 V VGS = 0 V 8 6 ID - Drain Current (mA) ID - Drain Current (mA) VGS = 0 V -0.2 V -0.4 V 4 -0.6 V -0.8 V 2 -1.0 V -1.5 V 18 -2.0 V 12 -2.5 V -3.0 V 6 -1.0 V -3.5 V -1.2 V 0 VGS(off) = -5 V 0 0 4 2 6 8 10 0 Transfer Characteristics 8 10 Transfer Characteristics 30 VGS(off) = -2 V VDS = 10 V VGS(off) = -5 V 8 VDS = 10 V 24 ID - Drain Current (mA) TA = -55_C 25_C 6 4 125_C 2 TA = -55_C 18 25_C 125_C 12 6 0 0 0 -0.4 -0.8 -1.2 -1.6 -2 0 -1 VGS - Gate-Source Voltage (V) -2 -3 -4 -5 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 10 10 8 VDS = 10 V f = 1 kHz VGS(off) = -5 V gfs - Forward Transconductance (mS) VGS(off) = -2 V gfs - Forward Transconductance (mS) 6 VDS - Drain-Source Voltage (V) 10 ID - Drain Current (mA) 4 2 VDS - Drain-Source Voltage (V) TA = -55_C 25_C 6 125_C 4 2 0 8 TA = -55_C 25_C 6 125_C 4 2 VDS = 10 V f = 1 kHz 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) www.vishay.com 7-4 -0.5 V 24 -2 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) Document Number: 70234 S-04028--Rev. E, 04-Jun-01 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current g fs R L AV + 1 ) R g L os 160 40 Assume VDD = 15 V, VDS = 5 V VGS(off) = -2 V 120 VGS(off) = -5 V 80 40 RL + 30 10 V ID VGS(off) = -2 V 20 VGS(off) = -5 V 10 TA = 25_C 0 0 1 10 ID - Drain Current (mA) 100 0.1 1 ID - Drain Current (mA) 10 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 6 VDS = 5 V 4 VDS = 0 V 2 VDS = 10 V 0 f = 1 MHz 4 3 VDS = 5 V 2 VDS = 0 V 1 VDS = 10 V 0 0 -4 -8 -16 -12 -20 0 -4 Input Admittance -16 -20 Forward Admittance TA = 25_C VDS = 10 V ID = 10 mA gig 10 bis 1 -12 100 TA = 25_C VDS = 10 V ID = 10 mA (mS) (mS) 10 -8 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) 100 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage Common-Source Input Capacitance vs. Gate-Source Voltage C iss - Input Capacitance (pF) Circuit Voltage Gain vs. Drain Current 50 AV - Voltage Gain rDS(on) - Drain-Source On-Resistance ( ) 200 -bfs gfs bfg 1 big -gfg gis 0.1 0.1 100 200 500 f - Frequency (MHz) Document Number: 70234 S-04028--Rev. E, 04-Jun-01 1000 100 200 500 f - Frequency (MHz) 1000 www.vishay.com 7-5 J/SSTJ210 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance Output Admittance 100 10 TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA -brs 10 (mS) (mS) 1 -brg -grs 0.1 bog, bos 1 grg -grg gog, gos 0.1 0.01 100 200 500 1000 100 200 f - Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency 150 VGS(off) = -5 V gos - Output Conductance (S) Hz VDS = 10 V en - Noise Voltage nV / 1000 Output Conductance vs. Drain Current 50 40 30 ID = 1 mA 20 ID = 10 mA 10 VDS = 10 V f = 1 kHz 120 TA = -55_C 90 25_C 60 30 125_C 0 0 10 100 1k f - Frequency (Hz) www.vishay.com 7-6 500 f - Frequency (MHz) 10 k 100 k 0.1 1 10 ID - Drain Current (mA) Document Number: 70234 S-04028--Rev. E, 04-Jun-01 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1