J/SSTJ210 Series
Vishay Siliconix
Document Number: 70234
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs
J210 SSTJ211
J211 SSTJ212
J212
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J210 –1 to –3 –25 4 2
J/SSTJ211 –2.5 to –4.5 –25 6 7
J/SSTJ212 –4 to –6 –25 7 15
FEATURES BENEFITS APPLICATIONS
DExcellent High Frequency Gain:
J211/212, Gps 12 dB (typ) @ 400 MHz
DVery Low Noise: 3 dB (typ) @
400 MHz
DVery Low Distortion
DHigh ac/dc Switch Off-Isolation
DHigh Gain: AV = 35 @ 100 mA
DWideband High Gain
DVery High System Sensitivity
DHigh Quality of Amplification
DHigh-Speed Switching Capability
DHigh-Quality Low-Level Signal
Amplification
DHigh-Frequency Amplifier/Mixer
DOscillator
DSample-and-Hold
DVery Low Capacitance Switches
DESCRIPTION
The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of applications.
These devices feature low leakage (IGSS < 100 pA).
The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount
capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).
For similar dual products, see the 2N5911/5912 and U440/441
data sheets.
TO-226AA
(TO-92)
Top View
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
Top View
2
3
1
*Marking Code for TO-236
SSTJ211 (Z1)*
SSTJ212 (Z2)*
J210
J211
J212
For applications information see AN104.
J/SSTJ210 Series
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70234
S-04028—Rev. E, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J210 J/SSTJ211 J/SSTJ212
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –35 –25 –25 –25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA –1–3–2.5 –4.5 –4–6V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 215 720 15 40 mA
VGS = –15 V, VDS = 0 V –1–100 –100 –100 pA
Gate Reverse Current IGSS TA = 125_C–0.5 nA
Gate Operating CurrentaIGVDG = 10 V, ID = 1 mA –1
Drain Cutoff Current ID(off) VDS = 10 V, VGS = –8 V 1pA
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductancebgfs VDS = 15 V, VGS = 0 V 412 612 712 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V
f = 1 kHz 150 200 200 mS
Common-Source
Input Capacitance Ciss VDS = 15 V, VGS = 0 V 4
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V
f = 1 MHz 1.5 pF
Equivalent Input Noise Voltage enVDS = 15 V, VGS = 0 V
f = 1 kHz 5nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZF
b. Pulse test: PW v300 ms duty cycle v3%.
J/SSTJ210 Series
Vishay Siliconix
Document Number: 70234
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
50
0–10–8–2
40
10
0
20
16
4
0
30
20
12
8
–4–60 4 16 20812
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
10 nA
100 pA
100 nA
1 nA
IG(on) @ ID
IGSS @ 25_C
TA = 125_C
10 mA 1 mA
TA = 25_C
IGSS @ 125_C
1 mA
10 mA
200
0–10–8–2
160
40
00.1 110
10
8
2
0
200
160
120
40
0
120
80 80
–4–6
6
4
5
0 0.2 0.8 1
4
1
0
2
3
0.4 0.6
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
rDS
gos
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
Output Characteristics
VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS = 0 V
VGS(off) = –5 V VDS = 10 V
f = 1 kHz
VGS(off) = –2 V
15
0 0.2 0.8 1
12
3
0
9
6
0.4 0.6
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–1.5 V
–0.5 V
–2.5 V
–1.0 V
–3.0 V
–3.5 V
–2.0 V
VGS(off) = –5 V
25_C
gos – Output Conductance (mS)
IDSS – Saturation Drain Current (mA)
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS) IG – Gate Leakage
ID – Drain Current (mA)
ID – Drain Current (µA)
J/SSTJ210 Series
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70234
S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
30
08210
24
6
0
18
12
46
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V –0.5 V
–2.5 V
–2.0 V
–3.0 V
–3.5 V
–1.0 V
–1.5 V
VGS(off) = –5 V
10
068210
8
6
2
0
4
4
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
VGS(off) = –2 V
10
0–0.4 –1.6 –2
8
2
0
10
0–1.2 –1.6–0.4 –2
8
4
2
0
6
4
6
–0.8 –1.2
–0.8
30
0–4–5–1
24
6
0
18
12
–2–3
10
–5–4–10
8
2
0
6
4
–2–3
Transfer Characteristics
VGS – Gate-Source Voltage (V)
TA = –55_C
VGS(off) = –2 V
125_C
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
VGS(off) = –5 V
TA = –55_C
125_C
Transfer Characteristics
VGS(off) = –2 V
TA = –55_C
125_C
VGS – Gate-Source Voltage (V)
VGS(off) = –5 V
TA = –55_C
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
125_C
VDS = 10 V VDS = 10 V
25_C
VDS = 10 V
f = 1 kHz
VDS = 10 V
f = 1 kHz
25_C
25_C25_C
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS) ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
J/SSTJ210 Series
Vishay Siliconix
Document Number: 70234
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1100.11 10 100
50
40
20
10
0
200
160
80
40
0
120 30
VGS(off) = –2 V
TA = 25_C
VGS(off) = –5 V
On-Resistance vs. Drain Current
ID – Drain Current (mA) ID – Drain Current (mA)
VGS(off) = –2 V
VGS(off) = –5 V
Circuit Voltage Gain vs. Drain Current
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
AV+
gfs RL
1)RLgos
10
0–16 –20–4
8
2
0
5
0–12 –20–16–4
4
2
1
0
6
4
3
–8–12 –8
100
10
1
0.1 100 1000
100
10
1
0.1 100 1000
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
VDS = 10 V
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
VGS – Gate-Source Voltage (V)
VDS = 10 V
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
gig
big
Input Admittance
f – Frequency (MHz)
gis
bis
f – Frequency (MHz)
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
bfg
Forward Admittance
–bfs
– Input Capacitance (pF)Ciss
200 500 200 500
VDS = 5 V VDS = 5 V
–gfggfs
rDS(on) – Drain-Source On-Resistance ( Ω )
Crss – Reverse Feedback Capacitance (pF) AV – Voltage Gain
J/SSTJ210 Series
Vishay Siliconix
www.vishay.com
7-6 Document Number: 70234
S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
1
0.1
0.01 100 1000
100
10
1
0.1 100 1000
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
–brg
–grg grg
Reverse Admittance
f – Frequency (MHz)
–brs
–grs
(mS)
TA = 25_C
VDS = 10 V
ID = 10 mA
gog, gos
bog, bos
Output Admittance
f – Frequency (MHz)
200 500 200 500
10 100 1 k 100 k10 k
50
40
10
0
150
120
90
30
00.1 1 10
60
30
20
Equivalent Input Noise Voltage vs. Frequency
ID = 1 mA
VDS = 10 V
ID = 10 mA
f – Frequency (Hz)
Output Conductance vs. Drain Current
VGS(off) = –5 V
ID – Drain Current (mA)
TA = –55_C
125_C
VDS = 10 V
f = 1 kHz
25_C
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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