MRF1090MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL (A) The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. A .100x45 FEATURES: C B * Internal Input Matching Network * PG = 8.4 dB at 90 W/1150 MHz * OmnigoldTM Metalization System OG D MAXIMUM RATINGS E IC 1.0 A PEAK VCB 55 V DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 .205 / 5.21 MAXIMUM PDISS 292 W @ 25 C B .195 / 4.95 C 1.000 / 25.40 TJ -65 C to +200 C D .004 / 0.10 .007 / 0.18 E .050 / 1.27 .065 / 1.65 TSTG -65 C to +150 C JC 0.6 C/W CHARACTERISTICS .145 / 3.68 F .275 / 6.99 G .285 / 7.21 TC = 25 C NONETEST CONDITIONS SYMBOL F BVCBO IC = 10 mA BVCER IC = 25 mA BVEBO IE = 1.0 mA ICES VCB = 50 V hFE VCE = 5.0 V COB VCE = 50 V PG C VCC = 50 V PIN = 13 W RBE = 10 IC = 1.0 A MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 10 f = 1.0 MHz POUT = 90 W f = 1025 - 1150 MHz UNITS 8.4 38 100 mA 200 --- 40 pF dB % Pulse with = 10 S, Duty Cycle = 1.0 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1