A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 10 mA 65 V
BVCER IC = 25 mA RBE = 10 Ω 65 V
BVEBO IE = 1.0 mA 3.5 V
ICES VCB = 50 V 100 mA
hFE VCE = 5.0 V IC = 1.0 A 10 200 ---
COB VCE = 50 V f = 1.0 MHz 40 pF
PG
η
ηη
ηC VCC = 50 V POUT = 90 W f = 1025 - 1150 MHz
PIN = 13 W
8.4
38 dB
%
Pulse with = 10 µS, Duty Cycle = 1.0 %
NPN SILICON RF POWER TRANSISTOR
MRF1090MB
DESCRIPTION:
The ASI MRF1090MB is Designed
for
High Peak power & low duty cycle,
IFF, DME, and TACAN Applicat ions.
FEATURES:
• Internal I nput Matching Network
• PG = 8.4 dB at 90 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.0 A PEAK
VCB 55 V
PDISS 292 W @ 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.6 °C/W
PACKAGE STYLE .280 4L PILL (A)
MINIMUM
inches / mm
.004 / 0.10
1.000 / 2 5.40
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.065 / 1.65
.145 / 3.68
.007 / 0.18
inches / mm
.205 / 5.21
DIM
.095 / 2.41 .105 / 2.67
F
E
A
.100x45°
D
B
C
ØG
G.275 / 6.99 .285 / 7.21
.195 / 4.95
