MSD7000 (SILICON) SILICON EPITAXIAL DUAL SERIES DIODE . designed for use in biasing, steering and voltage doubler SILICON EPITAXIAL applications. DUAL @ High Breakdown Voltage SERIES DIODE V(BR) = 100 Volts minimum @ Low Capacitance C = 1.5 pF maximum @ VR = 0 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vde 1. Recurrent Peak Forward Current ig 200 mA Peak Forward Surge Current tEM{surge) 500 mA A (Pulse Width = 10 us} Total Device Dissipation @ Tg = 25C Pp 350 mw I Derate above 25C 2.82 mw/oc c Operating Junction Temperature Ty 150 % | 4 { Storage Temperature Range Tstg ~55 to +150 oC SEATING St T F PLANE. _ K ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise-noted) Dl eo Characteristic Fig. No. | Symbol Min Max Unit Re Breakdown Voltage - ViBR) 100 - Vde qa ft (1(gR) = 100 wAdc} STYLE 1: | Reverse Current 2 IR uAdc PIN 1. EMITTER oa) t (VR = 100 Vde) - 05 2, BASE rA_s_ {VR #50 Vde) = 0.2 3. COLLECTOR mi (VR = 50 Vdc, Ta = 125C) - 100 -' Forward Voltage 1 Ve Vde {lg = 1.0 mAdc} 0.55 0.7 (tp = 10 mAdc} 0.67 0.82 {Ip = 100 mAdc) 0.75 11 Capacitance 3 c = 2.0 pF (VR =0) Reverse Recovery Time 45 ter - 15 ns (lp = IR = 10 mAdc, VR = 5.0 Vac, ipp = 1.0 mMAdc} CASE 29-02 TO-92 1384 MSD7000 (continued) ig, FORWARD CURRENT (mA) C, CAPACITANCE (pF} FIGURE 1 ~ FORWARD CHARACTERISTICS 100 50 20 10 5.0 2.0 10 05 0.2 0.1 Ty 126C 25C Ip, REVERSE LEAKAGE CURRENT (yA) FIGURE 2 REVERSE LEAKAGE CURRENT 0.02 0.01 04 0.6 08 1.0 42 100 Ve, FORWARD VOLTAGE (VOLTS) Ta, AMBIENT TEMPERATURE (C) FIGURE 3 CAPACITANCE FIGURE 4 REVERSE RECOVERY TIME Ty z iy = = > ec ud > Qo a = 2.0 40 6.0 8.0 10 05 0.7 09 it 13 15 Vp, REVERSE VOLTAGE (VOLTS) In/lg, RATIO OF REVERSE AND FORWARD CURRENT FIGURE 5 RECOVERY TIME EQUIVALENT TEST CIRCUIT 1 +6.2V 7 IF yo IR 48V _ L_ 100 ns < ty < 100 ps _ ter ~ 1.0 ns {max} DUTY CYCLE ~ 2.0% 1385