S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM
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Revision: 13-Aug-18 1Document Number: 89032
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High Current Density Surface Mount
Glass Passivated Rectifiers
DESIGN SUPPORT TOOLS
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Glass passivated pellet chip junction
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV) 4.0 A
VRRM 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 100 A
IR10 μA
VF at IF = 4 A 0.860 V
TJ max. 150 °C
Package SMPC (TO-277A)
Circuit configuration Single
SMPC (TO-277A)
Anode 1
Anode 2Cathode
K
K
2
1
eSMP
® Series
click logo to get started
Available
Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL S4PB S4PD S4PG S4PJ S4PK S4PM UNIT
Device marking code S4PB S4PD S4PG S4PJ S4PK S4PM
Max. repetitive peak reverse voltage VRRM 100 200 400 600 800 1000 V
Average forward current IF(AV) 4.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 100 A
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-18 2Document Number: 89032
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 2.0 A TA = 25 °C
VF (1)
0.897 -
V
IF = 4.0 A 0.958 1.10
IF = 2.0 A TA = 125 °C 0.783 -
IF = 4.0 A 0.860 0.95
Reverse current Rated VR
TA = 25 °C IR (2) -10
μA
TA = 125 °C 55 100
Max. reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 2.5 - μs
Typical junction capacitance 4.0 V, 1 MHz CJ30 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER SYMBOL S4PB S4PD S4PG S4PJ S4PK S4PM UNIT
Typical thermal resistance RJA (1) 60 °C/W
RJL 4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
S4PJ-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
S4PJ-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
S4PJHM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel
S4PJHM3_A/I (1) 0.10 I 6500 13" diameter plastic tape and reel
S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-18 3Document Number: 89032
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
5.0
4.0
3.0
2.0
1.0
0.5
0
0 25 50 75 100 125 150 175
Lead Temperature (°C)
Average Forward Rectified Current (A)
Resistive or Inductive Load
4.5
3.5
2.5
1.5
T
L
measured
at the Cathode Band Terminal
Average Forward Current (A)
Average Power Loss (W)
012345
0
0.5
1.0
2.0
3.0
4.0
5.0
D = 0.1 D = 0.2
D = 0.3 D = 0.5
D = 0.8
D = 1.0
1.5
2.5
3.5
4.5
D = t
p
/T t
p
T
0.01
0.1
1
10
100
0.3 0.5 0.7 0.9 1.1 1.3 1.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 125 °C
TJ= -40 °C
TJ= 150 °C
T
J
= 25 °C
0.0001
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (μA)
Percent of Rated Peak Reverse Voltage (%)
TJ= 25 °C
TJ= -40 °C
TJ= 125 °C
TJ= 150 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
100
10
0.1 1 10 100
Junction to Ambient
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
S4PB, S4PD, S4PG, S4PJ, S4PK, S4PM
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-18 4Document Number: 89032
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Conform to JEDEC® TO-277A
SMPC (TO-277A)
0.016 (0.40)
0.006 (0.15)
0.047 (1.20)
0.039 (1.00)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
0.173 (4.40)
0.049 (1.24)
0.037 (0.94)
0.053 (1.35)
0.041 (1.05)
0.030 (0.75) NOM.
0.084 (2.13) NOM.
0.155 (3.94)
NOM.
Mounting Pad Layout
0.268
(6.80)
0.186 (4.72)
MIN.
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
0.189 (4.80)
MIN.
0.187 (4.75)
0.175 (4.45)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
0.171 (4.35)
0.167 (4.25)
K
2
1
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Revision: 01-Jan-2019 1Document Number: 91000
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