.025" NPN Phototransistors Molded Lensed Lateral Package VTT7122H, 7123H, 7125H PACKAGE DIMENSIONS inch (mm) CASE 7 LATERAL CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS (@ 25C unless otherwise noted) A small area high speed NPN silicon phototransistor mounted in a lensed, side looking, transparent plastic, Maximum Temperatures transfer molded package. These devices are spectrally Storage Temperature: Operating Temperature: and mechanically matched to the VTE717xH series of IREDs. Continuous Power Dissipation: Derate above 30C: Maximum Current: Lead Soldering Temperature: RoHS Compliant (1.6 mm from case, 5 sec. max.) -40C to 85C -40C to 85C 50 mW 0.91 mW/C 25 mA 260C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also typical curves, pages 91-92) Light Current Dark Current Collector Breakdown Emitter Breakdown Saturation Voltage Rise/Fall Time lC lCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF H=0 lC = 100 A H=0 lE = 100 A H=0 lC = 1.0 mA H = 400 fc lC = 1.0 mA RL = 100 Volts, Min. Volts, Min. Volts, Max. sec, Typ. Part Number mA Min. Max. H fc (mW/cm2) VCE = 5.0 V (nA) Max. VCE (Volts) Angular Response 1/2 Typ. VTT7122H 1.0 -- 100 (5) 100 10 30 5.0 0.25 2.0 36 VTT7123H 2.0 -- 100 (5) 100 10 30 5.0 0.25 2.0 36 VTT7125H 4.5 -- 100 (5) 100 10 30 5.0 0.25 2.0 36 Refer to General Product Notes, page 2. Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 97 www.excelitas.com