Bulletin I25165 rev. B 01/94 ST180S SERIES PHASE CONTROL THYRISTORS Stud Version Features 200A Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling TypicalApplications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST180S Units 200 A 85 C 314 A @ 50Hz 5000 A @ 60Hz 5230 A @ 50Hz 125 KA2s @ 60Hz 114 KA2s 400 to 2000 V 100 s - 40 to 125 C IT(AV) @ TC IT(RMS) ITSM I2t VDRM /VRRM tq typical TJ www.irf.com case style TO-209AB (TO-93) 1 ST180S Series Bulletin I25165 rev. B 01/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code VDRM /VRRM , max. repetitive peak and off-state voltage V VRSM , maximum nonrepetitive peak voltage V 04 400 500 ST180S 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 I DRM/I RRM max. @ TJ = TJ max mA 30 On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM ST180S A 85 C 314 A I2 t 5000 t = 10ms 5230 t = 8.3ms reapplied t = 10ms 100% VRRM Maximum I2t for fusing Maximum I2t for fusing voltage V T(TO)2 High level value of threshold A Low level value of on-state t = 8.3ms reapplied Sinusoidal half wave, 125 t = 10ms No voltage Initial TJ = TJ max. 114 t = 8.3ms reapplied 88 t = 10ms 100% VRRM 81 t = 8.3ms reapplied 1250 KA2s KA2s slope resistance t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. 1.08 V (I > x IT(AV)),TJ = TJ max. 1.14 (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. 1.18 slope resistance High level value of on-state No voltage 4400 voltage r t2 DC @ 76C case temperature non-repetitive surge current V T(TO)1 Low level value of threshold r t1 180 conduction, half sine wave Max. peak, one-cycle 4200 I2 t Units Conditions 200 m (I > x IT(AV)),TJ = TJ max. 1.14 VTM Max. on-state voltage 1.75 IH Maximum holding current 600 IL Max. (typical) latching current V mA 1000 (300) Ipk= 570A, TJ = 125C, tp = 10ms sine pulse TJ = TJ max, anode supply 12V resistive load Switching Parameter di/dt of turned-on current t d ST180S Units Conditions Max. non-repetitive rate of rise Typical delay time 1000 A/s 2 Typical turn-off time 100 r TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s g 1.0 s tq Gate drive 20V, 20, t 1s V = 0.67% VDRM, TJ = 25C d ITM = 300A, TJ = TJ max, di/dt = 20A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s www.irf.com ST180S Series Bulletin I25165 rev. B 01/94 Blocking Parameter ST180S Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/s TJ = TJ max linear to 80% rated VDRM IDRM IRRM Max. peak reverse and off-state leakage current 30 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST180S Maximum peak gate power PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 3.0 +VGM Maximum peak positive Maximum peak negative TYP. VGT T J = TJ max, tp 5ms T J = TJ max, f = 50Hz, d% = 50 A T J = TJ max, tp 5ms V TJ = TJ max, tp 5ms 5.0 gate voltage IGT W 20 gate voltage -VGM Units Conditions 10 MAX. DC gate current required 180 - to trigger 90 150 40 - DC gate voltage required 2.9 - to trigger 1.8 3.0 1.2 - T J = - 40C mA T J = 25C T J = 125C T J = - 40C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied T J = 25C T J = 125C IGD DC gate current not to trigger 10 mA VGD DC gate voltage not to trigger 0.25 V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST180S TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10% Units C 0.105 DC operation K/W 0.04 Mounting surface, smooth, flat and greased 31 (275) 24.5 Non lubricated threads Nm (lbf-in) Lubricated threads (210) wt Approximate weight Case style www.irf.com Conditions 280 g TO - 209AB (TO-93) See Outline Table 3 ST180S Series Bulletin I25165 rev. B 01/94 RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180 0.015 0.012 120 0.019 0.020 90 0.025 0.027 60 0.036 0.037 30 0.060 0.060 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 18 0 S 20 P 0 1 2 3 4 5 6 7 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - P = Stud base 16UNF threads 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 8 9 M = Stud base metric threads (M16 x 1.5) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - V = Glass-metal seal (only up to 1200V) 9 - Critical dv/dt: None = 500V/sec (Standard value) None = Ceramic housing (over 1200V) L 4 = 1000V/sec (Special selection) www.irf.com ST180S Series Bulletin I25165 rev. B 01/94 Outline Table GLASS METAL SEAL 19 (0.75) MAX. 37) MI N. 4 (0.16) MAX. 8.5 (0.33) DIA. (0.8 6) M IN . 9.5 (0. 4.3 (0.17) DIA. FLEXIBLE LEAD 22 C.S. 25mm 2 (0.039 s.i.) 10 (0. 39) RED SILICON RUBBER C.S. 0.4mm (0.0006 s.i.) RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 220 (8.66) +- 10 (0.39) RED SHRINK MAX. 28.5 (1.12) MAX. DIA. 27.5 (1.0 8) MAX. 16 (0.63) MAX. WHITE SHRINK 38 .5 (1.52) 90 (3. 54) MIN. 210 (8.26) +I Fast-on Terminals 2 SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. CERAMIC HOUSING 19 (0.75) MAX. MI N. 4 (0.16) MAX. 37 ) 8.5 (0.33) DIA. C.S. 25mm 2 6) (0 .8 (0.039 s.i.) RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE MA X. 16 (0. 63) MA X. 220 (8.66) +- 10 (0.39) WHITE SHRINK 27.5 (1.08) MAX. DIA. 27. 5 (1.08) M AX. RED SHRINK 38.5 (1 .52) 90 (3.54) MIN. +I 210 (8.26) 22 FLEXIBLE LEAD MI N. 9.5 (0 . 4.3 (0.17) DIA. SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. www.irf.com 5 ST180S Series Bulletin I25165 rev. B 01/94 Outline Table GLASS-METAL SEAL 22 (0.89) FLAG TERMINALS DIA. 6.5 (0.25) DIA. 28.5 (1.12) MAX. 1 6 (0.63) MA X. 38.5 (1.5 2) M AX . 1.5 (0.06) DIA. 27 .5 (1 .0 8) MAX . 80 (3.1 5) MAX . 13 (0.51 ) 14 (0.55) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) 3 (0.12) CERAMIC HOUSING 22 (0.89) FLAG TERMINALS DIA. 6.5 (0.25) DIA. 27.5 (1.08) MAX. 16 (0.63) MAX. 38.5 (1.52) MAX. 1.5 (0.06) DIA. 27.5 (1.08) MAX. 80 (3.15) M AX. 13 (0.51) 14 (0.55) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) 6 www.irf.com Maximum Allowable Case Temperature (C) 130 ST180S Series R thJC (DC) = 0.105 K/W 120 110 Conduction Angle 30 100 60 90 120 90 180 80 0 40 80 120 160 200 240 130 ST180S Series R thJC (DC) = 0.105 K/W 120 110 Conduction Period 100 90 30 60 80 90 120 180 DC 70 0 50 100 150 200 250 300 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 = 8 0 .0 K/ W A W K/ K/ 0. 3 W K/ W 0.4 K /W Conduction Angle 0 .8 100 50 /W K/W 1.2 K/ ST180S Series T J = 125C R 0.5 K 150 a el t -D RMS Limit 0. 2 W K/ 200 0. 16 S R th 250 180 120 90 60 30 300 1 0. Maximum Average On-state Power Loss (W) Average On-state Current (A) W 0 0 40 80 120 160 200 25 240 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) ST180S Series 500 DC 180 120 90 60 30 450 400 350 300 R 0. 1 0. 0.2 250 100 ST180S Series T J = 125C 50 K/ W K/ W K/ W -D el ta R /W 0. 4 K /W 0.5 K /W 0 .8 K/W Conduction Period 150 0. 08 0. 3 K RMS Limit 200 16 th SA = K/ W 1.2 K/W 0 0 40 80 120 160 200 240 280 320 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics 7 350 Peak Half Sine Wave On-state Current (A) 4800 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4400 4000 3600 3200 2800 2400 ST180S Series 2000 1 10 100 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 5000 Of Conduction May Not Be Maintained. Initial TJ = 125C 4500 No Voltage Reapplied Rated VRRMReapplied 4000 3500 3000 2500 ST180S Series 2000 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) 0.1 Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ = 25C TJ = 125C 1000 ST180S Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value R thJC = 0.105 K/W (DC Operation) 0.1 0.01 ST180S Series 0.001 0.001 0.01 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) Peak Half Sine Wave On-state Current (A) ST180S Series 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic 8 10 ST180S Series Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b) VGD IGD 0.1 0. 001 0.01 (1) (2) (3) (4) PGM = PGM = PGM = PGM = 10W, 20W, 40W, 60W, tp = tp = tp = tp = (1) (2) 4ms 2ms 1ms 0.66ms (a) Tj=-40 C 1 Tj=25 C Tj=125 C Instantaneous Gate Voltage (V) 100 Device: ST180S Series 0.1 Frequency Limited by PG(AV) 1 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics 9 (3) (4) 10 100