200A
PHASE CONTROL THYRISTORS Stud Version
ST180S SERIES
1
Bulletin I25165 rev. B 01/94
www.irf.com
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 200 A
@ TC85 °C
IT(RMS) 314 A
ITSM @ 50Hz 5000 A
@ 60Hz 5230 A
I2t@
50Hz 125 KA2s
@ 60Hz 114 KA2s
VDRM/VRRM 400 to 2000 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST180S Units
Major Ratings and Characteristics
case style
TO-209AB (TO-93)
ST180S Series
2
Bulletin I25165 rev. B 01/94
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
ST180S 30
IT(AV) Max. average on-state current 200 A 180° conduction, half sine wave
@ Case temperature 85 °C
IT(RMS) Max. RMS on-state current 314 A DC @ 76°C case temperature
ITSM Max. peak, one-cycle 5000 t = 10ms No voltage
non-repetitive surge current 5230 t = 8.3ms reapplied
4200 t = 10ms 100% VRRM
4400 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 12 5 t = 10ms No voltage Initial TJ = TJ max.
114 t = 8.3 ms reapplied
88 t = 10ms 100% VRRM
81 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1250 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.75 V Ipk= 570A, TJ = 125°C, tp = 10ms sine pulse
IHMaximum holding current 600
ILMax. (typical) latching current 1000 (300)
1.08 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.18 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
1.14 (I > π x IT(AV)),TJ = TJ max.
Parameter ST180S Units Conditions
1.14 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = TJ max, anode supply 12V resistive load
A
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, d ig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, TJ = TJ max, di/dt = 20A/µs , VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST180S Units Conditions
tdTypical delay time 1.0
Switching
tqTypical turn-off time 100 µs
1000 A/µs
ST180S Series
3
Bulletin I25165 rev. B 01/94
www.irf.com
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM Max. peak reverse and off-state
IRRM leakage current
Blocking
500 V/µs TJ = TJ max linear to 80% rated VDRM
Parameter ST180S Units Conditions
30 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 10 T J = TJ max, t p ≤ 5ms
PG(AV) Maximum average gate power 2.0 T J = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A T J = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required T J = - 40°C
to trigger m A TJ = 25°C
TJ = 125°C
VGT DC gate voltage required T J = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 m A
Parameter ST180S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VT
J = TJ max, tp ≤ 5ms
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 31
(275)
24.5
(210)
wt Approximate weight 280 g
Case style TO - 209AB (TO-93) See Outline Table
Parameter ST180S Units Conditions
0.105 DC operation
0.04 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Nm
(lbf-in) Lubricated threads
Non lubricated threads
ST180S Series
4
Bulletin I25165 rev. B 01/94
www.irf.com
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.015 0.012 TJ = TJ max.
120° 0.019 0.020
90° 0.025 0.027 K/W
60° 0.036 0.037
30° 0.060 0.060
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
Ordering Information Table
5123 4
ST 18 0 S 20 P 0
76 89
Device Code
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- P = Stud base 16UNF threads
M = Stud base metric threads (M16 x 1.5)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
8- V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
9- Critical dv/dt: None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
ST180S Series
5
Bulletin I25165 rev. B 01/94
www.irf.com
Fast-on Terminals
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
Outline Table
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (8.26) 10 ( 0.39)
C.S. 0.4mm
(0.0006 s.i.)
MAX.
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
38 .5 (1.52)
MAX.
16 (0 . 6 3) M A X.
8.5 (0.33) DIA.
+
-
GLASS METAL SEAL
28.5 (1.12) MAX. DIA.
220 (8.66) 10 (0.39)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
SW 32
C.S. 25mm2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22 (0.86) MIN.
35 (1.38) MAX.
3/4"-16UNF-2A *
27.5 (1.08)
9.5 (0.37) MIN.
WHITE GATE
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (8.26) 10 ( 0.39)
C.S. 0.4mm
(0.0006 s.i.)
38.5 (1.52)
MAX.
+
-
220 (8.66) 10 (0.39)
CERAMIC HOUSING
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
C.S. 25mm2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22 (0.86) MIN.
MAX.
35 (1.38) MAX.
3/4"-16UNF-2A *
27.5 (1.08)
SW 32
27.5 (1.08) MAX. DIA.
WHITE GATE
9.5 (0.37) MIN.
16 (0.63) MAX.
AMP. 280000-1
REF-250
ST180S Series
6
Bulletin I25165 rev. B 01/94
www.irf.com
Outline Table
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
27. 5 ( 1.08) MAX. 38.5 (1.52) MAX.
3 (0.12)
80 (3.15) M AX .
DIA. 28.5 (1.12) MAX.
FLAG TERMINALS
1.5 (0.06) DIA.
SW 32
22 (0.89)
DIA. 6.5 (0.25)
13 (0. 51 )
14 (0.55)
16 (0.63) M AX.
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
27 .5 (1.08) MA X . 38.5 (1.52) MA X.
3 (0.12)
80 (3.15) M AX.
DIA. 27.5 (1.08) MAX.
16 (0.63) MAX.
FLAG TERMINALS
1.5 (0.06) DIA.
SW 32
22 (0.89)
DIA. 6.5 (0.25)
13 (0.51)
14 (0.55)
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3/4"-16UNF-2A*
ST180S Series
7
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
80
90
100
110
120
130
0 40 80 120 160 200 240
Ma xi mu m A llo wab le Case T e mpera tu re (°C)
30°60° 90° 120° 180°
Average On-stat e Current (A)
Co nducti o n Angl e
S T180S Series
R (DC) = 0.105 K/W
thJC
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
DC
30°60°90°120° 180°
Average On-state Curren t (A)
Maximum Allowable Case Temperature (°C)
Cond uction P eri od
ST180S Series
R (DC) = 0.1 05 K/W
thJC
Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics
25 50 75 100 125
Max imum All owable Ambient T e mper ature (°C)
R = 0.08 K/W - Delta R
thSA
0.1 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
RMS Limit
Condu ction A ngle
Maximum Average On-st ate Power Loss (W)
A v erage On-state Cu rrent (A)
ST 1 8 0S Series
T = 125°C
J
25 50 75 100 125
Maximum Allowable Ambient T emperature (°C)
R = 0.08 K/W - Delta R
thSA
0.1 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
300
350
400
450
500
0 40 80 120 160 200 240 280 320
DC
180°
120°
90°
60°
30°
RMS Li mit
Conduc tion Period
Maximum Average On -state Power Loss (W)
Ave r a ge On -s tate Cu rr ent (A )
ST 1 8 0S Series
T = 125°C
J
ST180S Series
8
2000
2400
2800
3200
3600
4000
4400
4800
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On -state Curr ent (A)
Initial T = 1 2 5 °C
@ 60 H z 0.00 83 s
@ 50 H z 0.01 00 s
J
ST 18 0 S Se ri es
At Any Rated Load C ondition A nd With
Rat ed V Applied Following Surge.
RRM
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
2000
2500
3000
3500
4000
4500
5000
5500
0.01 0.1 1
Pulse Tra in Dura tion (s )
Versus Pulse T rain Duration. Cont ro l
P eak Half Sine W ave On-state Cu rrent (A)
Initial T = 125°C
No Volt age Re appl ied
Rat ed V Re appl ied
RRM
J
ST180S Series
M aximum N on Repe t itive Surge Curre nt
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
T = 25°C
J
In s ta n taneou s O n- s tate Cu r rent (A )
Instan taneous On- state Volt age (V)
T = 125°C
J
ST180S S er ies
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq uare Wa ve Pu lse Duration (s )
thJC
Transient Thermal Impedance Z (K/W)
ST180S Ser i es
Steady Sta te Va lu e
R = 0. 105 K/W
(DC Operation)
thJC
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
ST180S Series
9
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj= 125 °C
Tj=-40 °C
(1) (2) (3)
Instanta neous Ga te Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Reco mm en de d l oad lin e for
b) Reco mmend ed load li ne for
<=30% r ated d i/dt : 10V, 10ohms
Frequency Limited by PG(AV)
r ated di/ dt : 20 V, 1 0 ohm s ; tr <=1 µs
t r<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST 180S Series
(4)
