P6SMAJ5.0ADF P6SMAJ85ADF
Document number: DS38930 Rev. 2 - 2
1 of 6
www.diodes.com
June 2017
© Diodes Incorporated
P6SMAJ5.0ADF P6SMAJ85ADF
P4SSMAJ200(C)A
ADVANCED I NF ORMATION
NEW PRODUCT
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
Packaged in the Low Profile D-FLAT Package to Optimize Board
Space
Glass Passivated Die Construction
Excellent Clamping Capability
Fast Response Time
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: D-FLAT
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Polarity Indicator: Cathode Band
Weight: 0.035 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
P6SMAJXXADF-13
D-FLAT
10,000/Tape & Reel
*XX = Device Voltage, for example: P6SMAJ17ADF-13.
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Greenproducts are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Green
Top View
xx = Product Type Marking Code
(See Electrical Characteristics Table)
= Manufacturers’ Code Marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 7 for 2017)
WW = Week Code (01 to 53)
YWW
xx
e3
1 2
Device Schematic
1 = Cathode
2 = Anode
P6SMAJ5.0ADF P6SMAJ85ADF
Document number: DS38930 Rev. 2 - 2
2 of 6
www.diodes.com
June 2017
© Diodes Incorporated
P6SMAJ5.0ADF P6SMAJ85ADF
P4SSMAJ200(C)A
ADVANCED I NF ORMATION
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Peak Pulse Power Dissipation
(Non Repetitive Current Pulse Derated Above TA = +25°C) (Note 5)
PPK
600
W
Peak Forward Surge Current, 8.3ms Single Half Sine Wave
Superimposed on Rated Load (Notes 5 & 6 )
IFSM
60
A
Steady State Power Dissipation @ TL = +75°C
PM(AV)
1.5
W
Instantaneous Forward Voltage @ IPP = 35A (Notes 5 & 6)
VF
3.5
V
Notes: 5. Valid provided that terminals are kept at ambient temperature.
6. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance, Junction to Terminal (Note 7)
RJT
64
°C/W
Typical Thermal Resistance, Junction to Terminal (Note 8)
RJT
57
°C/W
Typical Thermal Resistance, Junction to Ambient (Note 7)
RJA
115
°C/W
Typical Thermal Resistance, Junction to Ambient (Note 8)
RJA
92
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 7. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.06" x 0.09" copper pad.
8. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pad.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Part Number
Reverse
Standoff
Voltage
Breakdown
Voltage
VBR @ IT (Note 9)
Test
Current
Max. Reverse
Leakage @
VRWM
Max. Clamping
Voltage @ IPP
(Note 10)
Max. Peak Pulse
Current
IPP (Note 10)
Marking Code
VRWM (V)
Min (V)
Max (V)
IT (mA)
IRA)
VC (V)
(A)
P6SMAJ5.0ADF
5.0
6.40
7.23
10
800
9.2
65.2
KE
P6SMAJ6.0ADF
6.0
6.67
7.67
10
800
10.3
58.3
KG
P6SMAJ6.5ADF
6.5
7.22
8.30
10
500
11.2
53.6
KK
P6SMAJ7.0ADF
7.0
7.78
8.95
10
200
12.0
50.0
KM
P6SMAJ7.5ADF
7.5
8.33
9.58
1.0
100
12.9
46.5
KP
P6SMAJ8.0ADF
8.0
8.89
10.23
1.0
50
13.6
44.1
KR
P6SMAJ8.5ADF
8.5
9.44
10.82
1.0
10
14.4
41.7
KT
P6SMAJ9.0ADF
9.0
10.00
11.50
1.0
5.0
15.4
39.0
KV
P6SMAJ10ADF
10
11.10
12.80
1.0
5.0
17.0
35.3
KX
P6SMAJ11ADF
11
12.20
14.40
1.0
1.0
18.2
33.0
KZ
P6SMAJ12ADF
12
13.30
15.30
1.0
1.0
19.9
30.2
LE
P6SMAJ13ADF
13
14.40
16.50
1.0
1.0
21.5
27.9
LG
P6SMAJ14ADF
14
15.60
17.90
1.0
1.0
23.2
25.8
LK
P6SMAJ15ADF
15
16.70
19.20
1.0
1.0
24.4
24.0
LM
P6SMAJ16ADF
16
17.80
20.50
1.0
1.0
26.0
23.1
LP
P6SMAJ17ADF
17
18.90
21.70
1.0
1.0
27.6
21.7
LR
P6SMAJ18ADF
18
20.00
23.30
1.0
1.0
29.2
20.5
LT
P6SMAJ20ADF
20
22.20
25.50
1.0
1.0
32.4
18.5
LV
P6SMAJ22ADF
22
24.40
28.00
1.0
1.0
35.5
16.9
LX
P6SMAJ24ADF
24
26.70
30.70
1.0
1.0
38.9
15.4
LZ
P6SMAJ26ADF
26
28.90
33.20
1.0
1.0
42.1
14.2
ME
P6SMAJ28ADF
28
31.10
35.80
1.0
1.0
45.4
13.2
MG
P6SMAJ30ADF
30
33.30
38.30
1.0
1.0
48.4
12.4
MK
P6SMAJ33ADF
33
36.70
42.20
1.0
1.0
53.3
11.3
MM
P6SMAJ36ADF
36
40.00
46.00
1.0
1.0
58.1
10.3
MP
Notes: 9. VBR measured with IT current pulse = 10 ~ 15ms.
10. Per 10 x 1000µs waveform. See Figure 4.
P6SMAJ5.0ADF P6SMAJ85ADF
Document number: DS38930 Rev. 2 - 2
3 of 6
www.diodes.com
June 2017
© Diodes Incorporated
P6SMAJ5.0ADF P6SMAJ85ADF
P4SSMAJ200(C)A
ADVANCED I NF ORMATION
NEW PRODUCT
Electrical Characteristics (@TA = +25°C, unless otherwise specified.) (Cont.)
Part Number
Reverse
Standoff
Voltage
Breakdown
Voltage
VBR @ IT (Note 9)
Test
Current
Max. Reverse
Leakage @
VRWM
Max. Clamping
Voltage @ IPP
(Note 10)
Max. Peak Pulse
Current
IPP (Note 10)
Marking Code
VRWM (V)
Min (V)
Max (V)
IT (mA)
IRA)
VC (V)
(A)
P6SMAJ40ADF
40.0
44.40
51.10
1.0
1.0
64.5
9.3
MR
P6SMAJ43ADF
43.0
47.80
54.90
1.0
1.0
69.4
8.6
MT
P6SMAJ45ADF
45.0
50.00
57.50
1.0
1.0
72.7
8.3
MV
P6SMAJ48ADF
48.0
53.30
61.30
1.0
1.0
77.4
7.7
MX
P6SMAJ51ADF
51.0
56.70
65.20
1.0
1.0
82.4
7.3
MZ
P6SMAJ54ADF
54.0
60.00
69.00
1.0
1.0
87.1
6.9
NE
P6SMAJ58ADF
58.0
64.40
74.60
1.0
1.0
93.6
6.4
NG
P6SMAJ60ADF
60.0
66.70
76.70
1.0
1.0
96.8
6.2
NK
P6SMAJ64ADF
64.0
71.10
81.80
1.0
1.0
103.0
5.8
NM
P6SMAJ70ADF
70.0
77.80
89.50
1.0
1.0
113.0
5.3
NP
P6SMAJ75ADF
75.0
83.30
95.80
1.0
1.0
121.0
4.9
NR
P6SMAJ78ADF
78.0
86.70
99.70
1.0
1.0
126.0
4.7
NT
P6SMAJ85ADF
85.0
94.40
108.20
1.0
1.0
137.0
4.4
NV
Notes: 9. VBR measured with IT current pulse = 10 ~ 15ms.
10. Per 10 x 1000µs waveform. See Figure 4.
10 X 1000 Waveform
as defined by REA
025 50 75 100 125 150 175 200
100
75
50
25
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Pulse Derating Curve
A°
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
0
500
1000
1500
2000
2500
5
15
25
35
45
55
65
75
85
C
,
T
O
T
A
L
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
T
Fig. 2 Typical Total Capacitance vs.
Reverse Standoff Voltage
V
, REVERSE STANDOFF VOLTAGE (V)
RWM
Measure at T
=+25
C, f = 1MHz,
A
°
VBIAS = 0V DC
CT, TOTAL CAPACITANCE (pF)
P6SMAJ5.0ADF P6SMAJ85ADF
Document number: DS38930 Rev. 2 - 2
4 of 6
www.diodes.com
June 2017
© Diodes Incorporated
P6SMAJ5.0ADF P6SMAJ85ADF
P4SSMAJ200(C)A
ADVANCED I NF ORMATION
NEW PRODUCT
Notes: 7. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.06" x 0.09" copper pad.
8. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pad.
0
10
20
30
40
50
60
70
1
10
100
TJ = +25
C 8.3ms Single Half
°
Sine Wave JEDEC Method
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
(
A
)
Fig. 5 Maximum Non-Repetitive Forward Surge Current
NUMBER OF CYCLES AT 60Hz
0.1
1.0
0.1
10
100
1.0
10
1000
10000
T = +25 C
J
°
P
,
P
E
A
K
P
U
L
S
E
P
O
W
E
R
(
k
W
)
P
K
100
Non Repetitive
Pulse Waveform
Shown in Fig. 4
PPK, PEAK PULSE POWER (kW)
PEAK FORWARD SURGE CURRENT (A)
P6SMAJ5.0ADF P6SMAJ85ADF
Document number: DS38930 Rev. 2 - 2
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www.diodes.com
June 2017
© Diodes Incorporated
P6SMAJ5.0ADF P6SMAJ85ADF
P4SSMAJ200(C)A
ADVANCED I NF ORMATION
NEW PRODUCT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
D-FLAT
Dim
Min
Max
A
0.90
1.10
b
1.25
1.65
c
0.10
0.40
D
2.25
2.95
E
3.95
4.60
k
2.80
-
HE
5.00
5.60
L
0.50
1.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
4.65
G
2.80
X
1.85
X1
6.50
Y
1.70
H
D
E
L
b
A
c
Ek
X
G
C
X1
Y
P6SMAJ5.0ADF P6SMAJ85ADF
Document number: DS38930 Rev. 2 - 2
6 of 6
www.diodes.com
June 2017
© Diodes Incorporated
P6SMAJ5.0ADF P6SMAJ85ADF
P4SSMAJ200(C)A
ADVANCED I NF ORMATION
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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