1. Product profile
1.1 General description
PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic
package designed to protect one automotive Local Interconnect Network (LIN) bus line
from the damage caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features
nESD protection of one automotive LIN bus line
nAsymmetrical diode configuration ensures an optimized ElectroMagnetic
Immunity (EMI) of a LIN Electronic Control Unit (ECU)
nDue to the integrated diode structure only one very small SOD323 package is needed
nMax. peak pulse power: PPP = 160 W at tp= 8/20 µs
nLow clamping voltage: VCL = 40 V at IPP =1A
nUltra low leakage current: IRM <1nA
nESD protection of up to 23 kV
nIEC 61000-4-2, level 4 (ESD)
nIEC 61000-4-5 (surge); IPP = 3 A at tp= 8/20 µs
1.3 Applications
nLIN bus protection
nAutomotive applications
1.4 Quick reference data
PESD1LIN
LIN bus ESD protection diode
Rev. 02 — 12 November 2008 Product data sheet
Table 1. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage
PESD1LIN (15 V) - - 15 V
PESD1LIN (24 V) - - 24 V
Cddiode capacitance VR=0V;
f=1MHz - 1317pF
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 2 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode 1 (15 V)
2 cathode 2 (24 V) 21
006aab041
12
Table 3. Ordering information
Type number Package
Name Description Version
PESD1LIN SC-76 plastic surface-mounted package; 2 leads SOD323
Table 4. Marking codes
Type number Marking code
PESD1LIN AM
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPP peak pulse power tp= 8/20 µs[1] - 160 W
IPP peak pulse current tp= 8/20 µs[1] -3A
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 3 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge
voltage IEC 61000-4-2
(contact discharge) [1] -23kV
MIL-STD-883 (human
body model) -10kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 4 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage
PESD1LIN (15 V) - - 15 V
PESD1LIN (24 V) - - 24 V
IRM reverse leakage current
PESD1LIN (15 V) VRWM =15V - < 1 50 nA
PESD1LIN (24 V) VRWM =24V - < 1 50 nA
VBR breakdown voltage IR=5mA
PESD1LIN (15 V) 17.1 18.9 20.3 V
PESD1LIN (24 V) 25.4 27.8 30.3 V
Cddiode capacitance VR= 0 V; f = 1 MHz - 13 17 pF
VCL clamping voltage [1]
PESD1LIN (15 V) IPP =1A --25V
IPP =5A --44V
PESD1LIN (24 V) IPP =1A --40V
IPP =3A --70V
rdif differential resistance
PESD1LIN (15 V) IR= 1 mA - - 225 Ω
PESD1LIN (24 V) IR= 1 mA - - 300 Ω
Tamb =25°C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
006aaa164
103
102
104
PPP
(W)
10
tp (µs)
110
4
103
10 102Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 5 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
Fig 5. ESD clamping test setup and waveforms
006aaa166
50 Ω
RZ
CZ
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 20 V/div
horizontal scale = 50 ns/div
GND
GND
GND
GND
GND
GND
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
D.U.T.
(Device
Under
Test)
PESD1LIN (15V)
PESD1LIN (15V)
PESD1LIN (24V)
PESD1LIN (24V)
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 6 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
7. Application information
The PESD1LIN is designed for the protection of one LIN bus signal line from the damage
caused by ESD and surge pulses. The PESD1LIN provides a surge capability of up to
160 W per line for a 8/20 µs waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESD1LIN as close to the input terminal or connector as possible.
2. The path length between the PESD1LIN and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Fig 6. Typical application: ESD protection of one automotive LIN bus line
006aaa678
LIN
transceiver
PESD1LIN
CMASTER/SLAVE
CBAT
24 V
application (e.g. voltage regulator and microcontroller)
power application (e.g. electro motor, inductive loads)
LIN node
connector
15 V
BAT
GND
LIN
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 7 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 7. Package outline SOD323 (SC-76)
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3 1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PESD1LIN SOD323 4 mm pitch, 8 mm tape and reel -115 -135
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 8 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
10. Soldering
Fig 8. Reflow soldering footprint SOD323 (SC-76)
Fig 9. Wave soldering footprint SOD323 (SC-76)
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 9 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
11. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD1LIN_2 20081112 Product data sheet - PESD1LIN_1
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Table 6: ESD electrostatic discharge capability redefined to VESD electrostatic discharge
voltage
•Figure 6: enhanced
•Figure 7: superseded by minimized package outline drawing
•Section 10 “Soldering”: added
•Section 12 “Legal information”: updated
PESD1LIN_1 20041026 Product data sheet - -
PESD1LIN_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 12 November 2008 10 of 11
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESD1LIN
LIN bus ESD protection diode
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2008
Document identifier: PESD1LIN_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
