DISCRETE SEMICONDUCTORS DATA SHEET BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 Philips Semiconductors 1999 May 18 PHILIPSPhilips Semiconductors Product specification | BC807W PNP general purpose transistor FEATURES PINNING e High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). { base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT323 plastic package. T|3 NPN complement: BC817W. = 3 MARKING 1 TYPE MARKING TYPE MARKING NUMBER CODE) NUMBER CODE) FA Cy 2 BC8so7W 5D BC807-25W 5B 1 2 BC807-16W 5A* BC807-40W 5C# Top view MAMo4a Note 1. #*=-: Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. * = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Voso collector-base voltage open emitter 50 Vv Voeo callector-emitter voltage open base; Ic =10 mA 45 V VeBo emitter-base voltage open collector 5 V Ic collector current (DC) - 600 mA lem peak collector current - -1 A lp peak base current 200 mA Prot total power dissipation Tamb = 25 C; note 1 200 mW Tig storage temperature 65 +150 C Tj junction temperature 150 C Tamb operating ambient temperature 65 +150 C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 May 18Philips Semiconductors Product specification PNP general purpose transistor BC807W THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rith pa thermal resistance from junction to ambient note 1 625 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 G unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IcBo collector cut-off current le =0; Vep=20 V 100 nA le =0; Vep =20 V; Tj; = 150 G _ 5 LA lEBo emitter cut-off current Ic =0; Veg=5 V 100 nA hee DC current gain Ip =100 mA; Vce =1 V; note 1; BC807W see Figs 2,3 and 4 100 600 BC807-16W 100 250 BOC807-25W 160 400 BC807-40W 250 600 DC current gain lg =500 mA; Vege =1 V; note 1 40 - Voesat callector-emitter saturation lc =500 mA; |p = 50 mA; note 1 700 mV voltage Vee base-emitter voltage Ic =500 mA; Voce =1 V; note 1 -1.2 Vv on collector capacitance le =le = 0; Veg =10 V; f = 1 MHz 10 pF fr transition frequency Io =-10 mA; Voce =5 V; f = 100 MHz | 80 = MHz Note 1. Pulse test: tp < 300 ps; 6 < 0.02. 1999 May 18Philips Semiconductors Product specification PNP general purpose transistor BC807W MBH? 17 250 200 a Ly -Vce = 1 50 0 -10-1 4 -10 ~10? Ig (mA) -103 BC807-16W. Fig.2 DC current gain; typical values. 1999 May 18 4Philips Semiconductors Product specification PNP general purpose transistor BC807W MBH? t 500 FE 400 300 NJ 100 0 -1071 -1 -10 -10? Ig (mA) -108 BCaa7-25W. Fig.3 DC current gain; typical values. MBH? 19 500 NFE 400 Lit Voge = 1 V 300 \ 100 Y 0 ~1o-1 102 193 10 1 10 10 Ig (mA) 10 Bcao7r-4ow. Fig.4 DC current gain; typical values. 1999 May 18 5Philips Semiconductors Product specification PNP general purpose transistor BC807W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 rr | | | 1 y | 3 { Q 4 A | AY _ ty t c 1 2 ' f [Ei] i | | lw @ [8] ~~ lp + [] + 0 1 2mm | ee ee | scale DIMENSIONS (mm are the original dimensions) Ay UNIT | A max | PP c D E @ ey He | Lp a v w 11 04 | 025] 22 | 1.35 22 | 045 | 0.23 mm} os | ! | os | oto] te | tis | 1 | 5 | so Jos | ots | O22 | 9 REFERENCES OUTLINE ORCL CTION ISSUE DATE VERSION IEC JEDEC EIAJ SOT323 SC-70 -} 97-02-28 1999 May 18 6Philips Semiconductors Product specification PNP general purpose transistor BC807W DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134}. Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 118002/00/03/pp8 Philips Semiconductors Date of release: 1999 May 18 Document order number: 9897 750 05954 = S at oak . cr a : afte er fo as af Set ame te + dey ae Loatat FYRVUNS PRS EGE Gh TSE, Sao