AP9926GM RoHS-compliant Product Advanced Power Electronics Corp. Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D2 Capable of 2.5V gate drive D1 D1 Surface mount package BVDSS 20V RDS(ON) 30m ID G2 6A S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V ID@TA=25 3 Continuous Drain Current ,VGS @ 4.5V 6 A ID@TA=70 Continuous Drain Current ,VGS @ 4.5V 4.8 A 26 A 3 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation 2 W Linear Derating Factor 0.016 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient3 62.5 /W Data and specifications subject to change without notice 1 201005194 AP9926GM o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 20 - - V VGS=4.5V, ID=6A - - 30 m VGS=2.5V, ID=4A - - 45 m VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA - - 1.2 V gfs Forward Transconductance VDS=10V, ID=6A - 6 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 25 uA Drain-Source Leakage Current (T j=70 C) VDS=20V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=6A - 11 17.6 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 1.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.1 - nC 2 td(on) Turn-on Delay Time VDS=10V - 4.2 - ns tr Rise Time ID=1A - 9 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 23 - ns tf Fall Time RD=10 - 3.5 - ns Ciss Input Capacitance VGS=0V - 570 910 pF Coss Output Capacitance VDS=20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Min. Typ. Max. Units - - Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V 2 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9926GM 30 30 T A = 150 C V G =2.0V 20 15 10 5 V G = 2.0 V 20 15 10 5 0 0 0 1 2 3 0 1 V DS , Drain-to-Source Voltage (V) 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 36 I D =6A V G = 4.5V ID=4A T A =25 o C 1.4 Normalized RDS(ON) 32 RDS(ON) (m) 5.0V 4.5 V 3.5 V 2.5 V 25 ID , Drain Current (A) 25 ID , Drain Current (A) o 5.0V 4.5 V 3.5 V 2.5 V o T A =25 C 28 24 1.2 1.0 0.8 20 0.6 16 0 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 8 1.2 Normalized VGS(th) (V) 1.4 6 IS(A) 50 100 150 Fig 4. Normalized On-Resistance v.s. Temperature 10 T j =25 o C o T j =150 C 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) 4 2 1.0 0.8 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9926GM 12 f=1.0MHz 1000 ID=6A C oss V DS = 10 V V DS = 12 V V DS =1 6 V 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 100 C rss 4 2 10 0 0 10 20 1 30 5 Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthja) 1 10 100us 1ms ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.01 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C T j =150 o C QG 20 4.5V QGS QGD 10 Charge Q 0 0 1 2 3 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4