Advanced Power Dual N-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Low Gate Charge BVDSS 20V
▼ Capable of 2.5V gate drive RDS(ON) 30mΩ
▼ Surface mount package ID6A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient362.5 ℃/W
Data and specifications subject to change without notice
AP9926GM
RoHS-compliant Product
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage +12
Continuous Drain Current3,VGS @ 4.5V 6
Continuous Drain Current3,VGS @ 4.5V 4.8
Pulsed Drain Current126
Total Power Dissipation 2
Linear Derating Factor 0.016
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data Parameter
1
201005194
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness. G2
D2
S2
G1
D1
S1
S1G1S2G2
D1 D1 D2 D2
SO-8
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=6A - - 30 mΩ
VGS=2.5V, ID=4A - - 45 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA - - 1.2 V
gfs Forward Transconductance VDS=10V, ID=6A - 6 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=6A - 11 17.6 nC
Qgs Gate-Source Charge VDS=16V - 1.1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.1 - nC
td(on) Turn-on Delay Time2VDS=10V - 4.2 - ns
trRise Time ID=1A - 9 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 23 - ns
tfFall Time RD=10Ω- 3.5 - ns
Ciss Input Capacitance VGS=0V - 570 910 pF
Coss Output Capacitance VDS=20V - 90 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=6A, VGS=0V, - 21 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9926GM
2
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP9926GM
0
5
10
15
20
25
30
0123
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 5.0V
4.5V
3.5V
2.5V
VG=2.0V
0
5
10
15
20
25
30
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150 oC
VG=2.0 V
5.0V
4.5V
3.5V
2.5V
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=6A
VG=4.5V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.4
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
16
20
24
28
32
36
0246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=4A
TA=25oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP9926GM
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
0102030
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =10V
VDS =12V
VDS =16V
ID=6A
10
100
1000
1 5 9 13 17 21 25
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
10
20
30
0123
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this
area limited by
RDS(ON)
