BFR949L3 NPN Silicon RF Transistor* * For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 * fT = 9 GHz, F = 1 dB at 1 GHz 1 2 * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR949L3 Marking RK Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 10 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 1.5 Collector current IC 50 Base current IB 5 Total power dissipation2) Ptot 250 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 101 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 3) RthJS 195 K/W 1Pb-containing 2T package may be available upon special request is measured on the collector lead at the soldering point to the pcb S 3For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-26 BFR949L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 10 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 0.1 A hFE 100 140 180 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 6 V, pulse measured 2 2007-04-26 BFR949L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 7 9 - Ccb - 0.25 0.4 Cce - 0.15 - Ceb - 0.7 - GHz IC = 15 mA, VCE = 6 V, f = 1 GHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz - 1 2.5 - 1.3 - G ms - 21.5 - - G ma - 15.5 - dB IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain1) IC = 10 mA, VCE = 8 V, Z S = ZSopt , ZL = ZLopt, f = 900 MHz Power gain, maximum available1) IC = 10 mA, VCE = 8 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz |S 21e|2 Transducer gain dB IC = 15 mA, VCE = 6 V, Z S = ZL = 50 , f = 1 GHz 14 17 - - 12 - IC = 10 mA, VCE = 8 V, Z S = ZL = 50 , f = 1.8 GHz 1/2 ma = |S 21 / S12 | (k-(k-1) ), Gms = |S21 / S12| 1G 3 2007-04-26 Package TSLP-3-1 BFR949L3 Package Outline Bottom view 0.4 +0.1 0.6 0.05 0.5 0.035 2 1 0.05 3 0.65 0.05 3 1) 2 1 1) 0.05 MAX. 0.35 0.05 Pin 1 marking 2 x 0.15 0.035 2 x 0.25 0.035 1 0.25 0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 4 2007-04-26 BFR949L3 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 2007-04-26