2007-04-26
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BFR949L3
2
3
1
NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
• fT = 9 GHz, F = 1 dB at 1 GHz
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR949L3 RK 1 = B 2 = E 3 = C TSLP-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 10 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 1.5
Collector current IC50 mA
Base current IB5
Total power dissipation2)
TS ≤ 101 °C Ptot 250 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point3) RthJS ≤ 195 K/W
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
3For calculation of RthJA please refer to Application Note Thermal Resistance
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BFR949L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 10 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0 ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 0.1 µA
DC current gain-
IC = 5 mA, VCE = 6 V, pulse measured hFE 100 140 180 -
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BFR949L3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 6 V, f = 1 GHz fT7 9 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.25 0.4 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.15 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.7 -
Noise figure
IC = 5 mA, VCE = 6 V, ZS = ZSopt ,
f = 1 GHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
F
-
-
1
1.3
2.5
-
dB
Power gain1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
ZL = ZLopt, f = 900 MHz
Gms - 21.5 - -
Power gain, maximum available1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
Gma - 15.5 - dB
Transducer gain
IC = 15 mA, VCE = 6 V, ZS = ZL = 50Ω ,
f = 1 GHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
|S21e|2
14
-
17
12
-
-
dB
1Gma = |S21 / S12| (k-(k²-1)1/2), Gms = |S21 / S12|
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BFR949L3
Package TSLP-3-1
2
3
1
0.4
+0.1
BFR193L3
Type code
Pin 1 marking
Laser marking
0.76
4
1.16
0.5
Pin 1
marking
8
Reel ø180 mm = 15.000 Pieces/Reel
For board assembly information please refer to Infineon website "Packages"
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Stencil aperturesCopper Solder mask
0.275
0.2
0.315
0.945
0.45
0.17
0.355
0.2
0.35
0.225
1
0.6
0.225
0.15
0.35 0.3
R0.1
1
2
±0.05
0.35
±0.035
2x0.15
1)
Top view Bottom view
1) Dimension applies to plated terminal
±0.035
0.5
1) ±0.05
0.6
3
±0.05
0.65
±0.035
2x
0.25
1)
±0.035
0.25
1)
1
±0.05
Pin 1
marking
0.05 MAX.
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BFR949L3
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
