BCP69 PNP Silicon AF Transistor * For general AF applications 4 * High collector current * High current gain * Low collector-emitter saturation voltage 3 * Complementary type: BCP68 (NPN) 2 1 Pin Configuration VPS05163 Type Marking Package BCP69 BCP 69 1=B 2=C 3=E 4=C SOT223 BCP69-16 BCP69-16 1=B 2=C 3=E 4=C SOT223 BCP69-25 BCP 69-25 1 = B 2=C 3=E 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 20 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 DC collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 C Ptot 1.5 W Junction temperature Tj 150 C Storage temperature Tstg Values Unit V A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-28-2005 BCP69 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. V(BR)CEO 20 - - V(BR)CES 25 - - V(BR)CBO 25 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 100 A hFE 50 - - BCP69 85 - 375 BCP69-16 100 160 250 BCP69-25 160 250 375 60 - - - - 0.5 IC = 5 mA, VCE = 10 V - 0.6 - IC = 1 A, VCE = 1 V - - 1 - 100 - Characteristics Collector-emitter breakdown voltage V IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C DC current gain 1) - IC = 5 mA, VCE = 10 V hFE DC current gain 1) IC = 500 mA, V CE = 1 V DC current gain 1) hFE IC = 1 A, VCE = 1 V VCEsat Collector-emitter saturation voltage1) V IC = 1 A, IB = 100 mA VBE(ON) Base-emitter voltage 1) AC Characteristics fT Transition frequency MHz IC = 100 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t 300s, D = 2% 2 Feb-28-2005 BCP69 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 1.6 10 3 BCP 69 EHP00283 MHz W fT 5 Ptot 1.2 1 10 2 0.8 0.6 5 0.4 0.2 0 0 20 40 60 80 100 120 C 10 1 0 10 150 10 1 10 2 TS DC current gain hFE = f (IC ) VCB = 25V VCE = 1V CBO BCP 69 10 3 C Collector cutoff current ICBO = f (TA) 10 5 mA EHP00284 10 3 nA h FE BCP 69 EHP00285 5 10 4 100 C max 10 3 25 C 10 2 -50 C 5 typ 10 2 10 1 5 10 1 10 0 0 50 100 C 10 0 10 0 150 10 1 10 2 mA 10 4 C TA 3 Feb-28-2005 BCP69 Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat), hFE = 10 IC = f (VBEsat), hFE = 10 10 4 C BCP 69 EHP00286 10 4 BCP 69 EHP00287 mA mA C 10 3 100 C 25 C -50 C 10 3 5 100 C 25 C -50 C 10 2 10 2 5 10 1 10 1 5 10 0 0 0.2 0.6 0.4 V 10 0 0.8 V CEsat 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 BCP 69 Ptot max Ptot DC EHP00288 D= tp T tp T 10 2 D = 0.0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 1 tp 4 Feb-28-2005 Package SOT223 Package Outline 1.6 0.1 6.5 0.2 0.1 MAX. 2 B 0.5 MIN. 1 +0.2 acc. to DIN 6784 3.5 0.2 4 7 0.3 3 0.1 15 MAX. A 3 0.28 0.04 2.3 0.7 0.1 4.6 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout Manufacturer Date code (Year/Calendarweek) 2003, July Type code BCP52-16 Pin 1 Example Packing Code E6327: Reel o180 mm = 1.000 Pieces/Reel Code E6433: Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. Pin 1 6.8 12 7.55 8 1.75 Impressum Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.