BCP69
1 Feb-28-2005
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCP68 (NPN)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BCP69
BCP69-16
BCP69-25
BCP 69
BCP69-16
BCP 69-25
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 20 V
Collector-emitter voltage VCES 25
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 5
DC collector current IC1 A
Peak collector current ICM 2
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS = 124 °C Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCP69
2 Feb-28-2005
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CEO 20 - - V
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 25 - -
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 25 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 25 V, IE = 0
ICBO - - 100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO - - 100 µA
DC current gain 1)
IC = 5 mA, VCE = 10 V
hFE 50 - - -
DC current gain 1)
IC = 500 mA, VCE = 1 V
BCP69
BCP69-16
BCP69-25
hFE
85
100
160
-
160
250
375
250
375
DC current gain 1)
IC = 1 A, VCE = 1 V
hFE 60 - -
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
VCEsat - - 0.5 V
Base-emitter voltage 1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VBE(ON)
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT- 100 - MHz
1) Pulse test: t ≤ 300µs, D = 2%
BCP69
3 Feb-28-2005
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00283BCP 69
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = f(TS)
0 20 40 60 80 100 120 °C 150
TS
0
0.2
0.4
0.6
0.8
1
1.2
W
1.6
Ptot
DC current gain hFE = f (IC)
VCE = 1V
10
EHP00285BCP 69
04
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
2
10
˚C
5
100
25 ˚C
˚C
-50
Collector cutoff current ICBO = f (TA)
VCB = 25V
0
10
EHP00284BCP 69
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
BCP69
4 Feb-28-2005
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0
10
EHP00287BCP 69
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
˚C
100
25
˚C
-50
˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00286BCP 69
CEsat
V
0.4 V 0.8
0
101
102
4
10
5
5
Ι
C
mA
5
3
10
0.2 0.6
˚C
100
25
˚C
-50
˚C
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00288BCP 69
-6 -5
10 1
10s
-1
10
2
10
3
10
5
5
10-4 10-3 10-2
101
0.0
0.2
0.1
0.05
0.02
0.01
0.005
=
D
0.5
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
Package SOT223
Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 1.000 Pieces/Reel
Code E6433: Reel ø330 mm = 4.000 Pieces/Reel
0.25
±0.1
0.7
4.6
M
A
1 2
2.3
3
A3
4
±0.1
6.5
±0.2
DIN 6784
+0.2
acc. to
±0.04
0.25
0.5 MIN.
M
B
0.28
0.1 MAX.
15
˚
7
±0.3
1.6
±0.1
3.5
±0.2
B
MAX.
1.2 1.1
1.4 1.44.8
3.5
Manufacturer
Date code
(Year/Calendarweek)
Type code
Example
2003, July
BCP52-16
Pin 1
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
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please contact your nearest Infineon Technologies Office (www.Infineon.com).
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Life support devices or systems are intended to be implanted in the human body, or
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