AP9578GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D D Simple Drive Requirement D D Fast Switching Characteristic S S -60V RDS(ON) 170m ID G SO-8 BVDSS -3A S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units -60 V 25 V 3 -3 A 3 -2.3 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current -20 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 201024071-1/4 AP9578GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Test Conditions Typ. -60 - - V VGS=-10V, ID=-3A - - 170 m VGS=-4.5V, ID=-2A - - 200 m VDS=VGS, ID=-250uA -1 - -3 V VGS=0V, ID=-250uA 2 Max. Units VDS=-10V, ID=-3A - 4 - S o VDS=-60V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-48V, VGS=0V - - -25 uA Gate-Source Leakage VGS=25V - - 100 nA ID=-3A - 9 15 nC Drain-Source Leakage Current (Tj=25 C) IGSS Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3 - nC VDS=-30V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 36 - ns tf Fall Time RD=30 - 11 - ns Ciss Input Capacitance VGS=0V - 800 1280 pF Coss Output Capacitance VDS=-25V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. IS=-2A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-3A, VGS=0V, - 41 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 95 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP9578GM 20 20 -10V -7.0V -5.0V 15 -4.5V 10 V G = -3.0 V 15 -4.5V 10 V G = -3.0 V 5 5 0 0 0 2 4 6 8 10 0 12 2 4 6 8 10 12 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 185 1.8 ID=-2A T A =25 ID=-3A V G =-10V 1.6 Normalized RDS(ON) RDS(ON) (m) -10V -7.0V -5.0V T A = 150 o C -ID , Drain Current (A) -ID , Drain Current (A) T A = 25 o C 170 155 1.4 1.2 1.0 0.8 0.6 140 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 Normalized -VGS(th) (V) 2.0 -IS(A) 2 T j =150 o C T j =25 o C 1 1.5 1.0 0.5 0.0 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9578GM f=1.0MHz 12 1000 ID= -3A V DS = - 48 V 8 C (pF) -VGS , Gate to Source Voltage (V) C iss 10 6 100 C oss C rss 4 2 0 10 0 4 8 12 16 1 20 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thja) 1 10 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1ms 1 10ms 100ms 0.1 1s o T A =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125 oC/W DC 0.01 0.001 0.1 1 10 100 1000 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D 8 7 Millimeters 6 5 E1 1 2 3 E 4 e SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 1.27 TYP e B A A1 DETAIL A L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number 9578GM YWWSSS Package Code meet Rohs requirement Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence