Vishay Siliconix
Si6463BDQ
Document Number: 72018
S10-2138-Rev. C, 20-Sep-10
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1
P-Channel 1.8 V (G-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A)
- 20
0.015 at VGS = - 4.5 V - 7.4
0.020 at VGS = - 2.5 V - 6.3
0.027 at VGS = - 1.8 V - 5.5
Si6463BDQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
Notes:
a. Surface mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 20 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
- 7.4 - 6.2
A
TA = 70 °C - 5.9 - 4.9
Pulsed Drain Current (10 µs Pulse Width) IDM - 30
Continuous Source Current (Diode Conduction)aIS- 1.35 - 0.95
Maximum Power DissipationaTA = 25 °C PD
1.5 1.05 W
TA = 70 °C 1.0 0.67
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat 10 s RthJA
65 83
°C/W
Steady State 100 120
Maximum Junction-to-Foot Steady State RthJF 46 56
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Document Number: 72018
S10-2138-Rev. C, 20-Sep-10
Vishay Siliconix
Si6463BDQ
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 - 0.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 20 V, VGS = 0 V - 1 µA
VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10
On-State Drain CurrentaID(on) V
DS = - 5 V, VGS = - 4.5 V - 20 A
Drain-Source On-State ResistanceaRDS(on)
VGS - 4.5 V, ID = - 7.4 A 0.011 0.015
VGS = - 2.5 V, ID = - 6.3 A 0.015 0.020
VGS = - 1.8 V, ID = - 5.5 A 0.020 0.027
Forward Transconductanceagfs VDS = - 15 V, ID = - 7.4 A 34 S
Diode Forward VoltageaVSD IS = - 1.3 A, VGS = 0 V - 0.64 - 1.1 V
Dynamicb
Total Gate Charge Qg
VDS = - 10 V, VGS = - 5 V, ID = - 7.4 A
40 60
nCGate-Source Charge Qgs 5.2
Gate-Drain Charge Qgd 8
Tur n - O n D e l ay Time td(on)
VDD = - 10 V, RL = 15
ID - 1 A, VGEN = - 4.5 V, Rg = 6
35 55
ns
Rise Time tr40 60
Turn-Off Delay Time td(off) 190 300
Fall Time tf90 150
Source-Drain Reverse Recovery Time trr IF = - 1.3 A, dI/dt = 100 A/µs 75 120
Output Characteristics
0
6
12
18
24
30
012345
V
GS
= 5 V thru 2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1.5 V
Transfer Characteristics
0
6
12
18
24
30
0.0 0.5 1.0 1.5 2.0
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72018
S10-2138-Rev. C, 20-Sep-10
www.vishay.com
3
Vishay Siliconix
Si6463BDQ
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance ()RDS(on)
0.000
0.006
0.012
0.018
0.024
0.030
0 6 12 18 24 30
ID - Drain Current (A)
VGS = 4.5 V
VGS = 2.5 V
VGS = 1.8 V
0
1
2
3
4
5
0 8 16 24 32 40
VDS = 10 V
ID = 7.4 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 25 °C
30
10
1
VSD - Source-to-Drain Voltage (V)
- Source Current (A)I
S
TJ = 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
1000
2000
3000
4000
5000
048121620
VDS - Drain-to-Source Voltage (V)
Crss
C - Capacitance (pF)
Coss
Ciss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 7.4 A
TJ - Junction Temperature (°C)
(Normalized)
R - On-Resistance
DS(on)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
012345678
ID = 7.4 A
- On-Resistance ()RDS(on)
VGS - Gate-to-Source Voltage (V)
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Document Number: 72018
S10-2138-Rev. C, 20-Sep-10
Vishay Siliconix
Si6463BDQ
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Threshold Voltage
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Case
100
1
0.1 1 10 100
0.01
10
100 ms
- Drain Current (A)ID
0.1
Limited
by R *
DS(on)
T
C
= 25 °C
Single Pulse
1 s
10 s
DC
10 ms
1 ms
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Document Number: 72018
S10-2138-Rev. C, 20-Sep-10
www.vishay.com
5
Vishay Siliconix
Si6463BDQ
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72018.
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
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Revision: 08-Feb-17 1Document Number: 91000
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