APT25GR120B_SSCD10 APT25GR120BSCD10 APT25GR120SSCD10 1200V, 25A, VCE(on)= 2.5V Typical Ultra Fast NPT - IGBT(R) (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT(R) offers superior ruggedness and ultrafast switching speed. (R) TO -2 D 3 PA K 47 (S) C G Features * Low Saturation Voltage * Low Tail Current * Short Circuit Withstand Rated G C E E * High Frequency Switching * RoHS Compliant * Ultra Low Leakage Current Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 75 I C2 Continuous Collector Current @ TC = 125C 25 I CM Pulsed Collector Current 100 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125C 10 s Total Power Dissipation @ TC = 25C 521 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) 3.3 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) 3.5 (VCE = VGE, I C = 1.0mA, Tj = 25C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 3.5 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) I GES 25 2 2 Unit Volts 700 A 250 nA 250 Gate-Emitter Leakage Current (VGE = 20V) Microsemi Website - http://www.microsemi.com 052-6410 Rev A 1-2013 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol APT25GR120B_SSCD10 Parameter Cies Input Capacitance Coes Output Capacitance Test Conditions Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate- Collector Charge td(on) Turn-On Delay Time tr td(off) tf Min Typ Capacitance 2484 VGE = 0V, VCE = 25V 271 pF 7.5 Gate Charge VGE = 15V VCE= 600V IC = 25A V 154 203 20 27 76 97 Inductive Switching (25C) 16 Current Rise Time VCC = 600V 10 Turn-Off Delay Time VGE = 15V 122 20 IC = 25A Turn-On Switching Energy RG = 4.3 434 650 Turn-Off Switching Energy TJ = +25C 466 700 td(on) Turn-On Delay Time tr td(off) tf Eon2 Eoff 6 4 Inductive Switching (125C) 16 Current Rise Time VCC = 600V 10 Turn-Off Delay Time VGE = 15V 136 Current Fall Time 5 nC ns Eoff 6 Eon2 5 Unit 75 f = 1MHz Current Fall Time Max J ns 28 IC = 25A Turn-On Switching Energy RG = 4.3 Turn-Off Switching Energy TJ = +125C 506 760 480 720 Typ Max 4 J THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJA Characteristic Min Junction to Case Thermal Resistance (IGBT) .24 Junction to Case Thermal Resistance (Diode) 1.00 Junction to Ambient Thermal Resistance WT C/W 40 .22 Package Weight Torque Unit oz 6.2 g Terminals and Mounting Screws. 10 in*lbf 1.1 N*m 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6410 D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 0.3 0.05 P DM ZJC, THERMAL IMPEDANCE (C/W) Rev A 1-2013 0.25 t2 0.1 t SINGLE PULSE 0.05 0 10-5 t1 10-4 Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1 TYPICAL PERFORMANCE CURVES APT25GR120B_SSCD10 200 350 V GE = 15V IC, COLLECTOR CURRENT (A) 300 150 FREQUENCY (kHz) 250 200 TJ= - 55C TJ= 25C 100 50 0 0 30 40 50 IC(A) FIGURE 2, Max Frequency vs Current (Tcase = 75C) 13V IC, COLLECTOR CURRENT (A) 160 140 120 8.5V 100 8.0V 80 7.5V 60 7V 40 6.5V 20 0 200 IC, COLLECTOR CURRENT (A) 9V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 4, Output Characteristics (TJ = 25C) 250s PULSE TEST<0.5 % DUTY CYCLE 160 120 80 40 0 TJ= 150C TJ= 125C TJ= 25C 0 BV , BREAKDOWN VOLTAGE ces (NORMALIZED) 1.15 TJ= -55C 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 6, Transfer Characteristics 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE FIGURE 8, Breakdown Voltage vs Junction Temperature 0 2 4 6 8 10 12 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Output Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 15V 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 180 10 6 5 IC = 50A 4 IC = 25A 3 IC = 12.5A 2 1 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE -50 0 50 100 150 TJ, Junction Temperature (C) FIGURE 5, On State Voltage vs Junction Temperature 6 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 5 4 IC = 50A 3 IC = 25A IC = 12.5A 2 1 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage 100 6 90 IC, DC COLLECTOR CURRENT (A) 0 TJ= 150C 50 80 70 60 50 40 Rev A 1-2013 100 TJ= 125C 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) FIGURE 9, DC Collector Current vs Case Temperature 052-6410 150 TYPICAL PERFORMANCE CURVES 1.0E-8 1.0E-9 Coes Cres VGE, GATE-TO-EMITTER VOLTAGE (V) C, CAPACITANCE (F) Cies 1.0E-10 1.0E-11 Tr 1200 1000 800 Eoff 200 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Energy Loss vs Collector Current 4 2 0 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-Off Time vs Collector Current 1000 Eon2 500 Eoff VCE = 600V, VGE=15V, IC = 25A TJ = 125C 0 200 0 10 20 30 40 50 60 RG, GATE RESISTANCE () FIGURE 15, Energy Loss vs Gate Resistance 100 IC, COLLECTOR CURRENT (A) SWITCHING ENERGY LOSSES (J) Rev A 1-2013 2000 052-6410 VCE = 960V 6 10 SWITCHING ENERGY LOSS (J) SWITCHING ENERGY LOSS (J) Eon2 400 8 1500 VCE = 600V, VGE=15V, RG = 4.3 TJ = 25C TJ = 125C 600 10 Tf 2000 1400 VCE = 600V 12 100 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Turn-On Time vs Collector Current 1600 VCE = 240V 14 Td(off) VCE = 600V, VGE=15V, RG = 4.3 TJ = 25C or 125C 1800 16 VCE = 600V, VGE=15V, RG = 4.3 TJ = 25C TJ = 125C SWITCHING TIME (ns) SWITCHING TIME (ns) 10 J 50 100 150 200 GATE CHARGE (nC) FIGURE 11, Gate charge vs. Gate-to-Emitter Voltage 1000 100 Td(on) I = 25A C T = 25C 18 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 10, Capacitance vs Collector-To-Emitter Voltage 1 APT25GR120B_SSCD10 20 1000 Eoff Eon2 VCE = 600V, VGE=15V, RG = 4.3 IC = 25A 100 0 25 50 75 100 10 100s .1ms 1ms 10ms 100ms 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Energy Losses vs Junction Temperature 1 1 10 100 1000 3000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 17, Minimum Switching Safe Operating Area APT25GR120B_SSCD10 TYPICAL PERFORMANCE CURVES ZERO RECOVERY LOW LEAKAGE SIC ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF All Ratings: TC = 25C unless otherwise specified. Characteristic / Test Conditions Ratings Maximum D.C. Forward Current TC = 25C 36 TC = 135C 10 IFRM Repetitive Peak Forward Surge Current (TJ = 45C, tp = 10ms, Half Sine Wave) 50 IFSM Non-Repetitive Forward Surge Current (TJ = 25C, tp = 10ms, Half Sine) 110 Unit Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ IF = 10A TJ = 25C 1.5 IF = 10A, TJ = 150C 2.1 VF Forward Voltage Qc Total Capactive Charge VR = 800V, IF = 10A, di/dt = -100A/s, TJ = 25C 30 Junction Capacitance VR = 0V, TJ = 25C, f = 1MHz 600 Junction Capacitance VR = 200V, TJ = 25C, f = 1MHz 71 Junction Capacitance VR = 400V, TJ = 25C, f = 1MHz 52 CT Max Unit Volts nC pF 1 0. 8 0. 6 Note: 0. 4 P DM ZJC, THERMAL IMPEDANCE (C/W) 1. 2 t1 t2 0. 2 0 t Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 40 35 TJ = 25C 30 TJ = 150C 25 TJ = 125C 10 5 20 15 10 5 0 0 2 4 6 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 19, Forward Current vs. Forward Voltage 0 25 50 75 100 125 150 Case Temperature (C) FIGURE 20, Maximum Forward Current vs. Case Temperature Rev A 1-2013 15 052-6410 TJ = -55C IF(peak) (A) IF, FORWARD CURRENT (A) 20 APT25GR120B_SSCD10 TYPICAL PERFORMANCE CURVES 140 80 Qrr, REVERSE RECOVERY CHARGE (nC) 120 80 60 P total (w) 100 40 20 0 dif/dt = -200A/s TJ = 125C 60 40 20 0 100 200 300 25 50 75 100 125 150 CASE TEMPERATURE (C) Figure 21. Maximum Power Dissipation vs. Case Temperature 400 500 600 700 800 900 VR, REVERSE VOLTAGE (V) Figure 22. Reverse Recovery Charge vs. VR CJ, JUNCTION CAPACITANCE (pF) 700 600 500 400 300 200 100 0 0 100 200 300 400 500 600 700 800 VR, REVERSE VOLTAGE (V) Figure 23. Junction Capacitance vs. Reverse Voltage D3PAK Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector (Cathode) 6.15 (.242) BSC 15.95 (.628) 16.05(.632) Revised 4/18/95 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 0.40 (.016) 1.016 (.040) Rev A 1-2013 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 052-6410 5.38 (.212) 6.20 (.244) Collector (Cathode) (Heat Sink) TO-247 Package Outline 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) Gate Collector (Cathode) Emitter (Anode) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs. } Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead ) Heat Sink (Collector) and Leads are Plated APT25GR120B_SSCD10 Disclaimer: The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. 052-6410 patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer's and user's responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Rev A 1-2013 Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. 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