052-6410 Rev A 1-2013
APT25GR120B_SSCD10
Symbol Parameter Ratings Unit
Vces Collector Emitter Voltage 1200
V
VGE Gate-Emitter Voltage ±30
IC1 Continuous Collector Current @ TC = 25°C 75
AIC2 Continuous Collector Current @ TC = 125°C 25
ICM Pulsed Collector Current 1100
SCWT Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs
PDTotal Power Dissipation @ TC = 25°C 521 W
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TLMax. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Microsemi Website - http://www.microsemi.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Symbol Parameter Min Typ Max Unit
V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500μA) 1200
Volts
VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1.0mA, Tj = 25°C) 3.5 5.0 6.5
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C) 2.5 3.2
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C) 3.3
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C) 3.5
ICES
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 225 700 µA
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2250
IGES Gate-Emitter Leakage Current (VGE = ±20V) ±250 nA
Ultra Fast NPT - IGBT®
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior
ruggedness and ultrafast switching speed.
Features
• Low Saturation Voltage
• Low Tail Current
• RoHS Compliant
• Short Circuit Withstand Rated
• High Frequency Switching
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
Combi (IGBT and Diode)
APT25GR120BSCD10
APT25GR120SSCD10
1200V, 25A, VCE(on)= 2.5V Typical
TO-247
GCE
D3PA K
G
C
E
(S)
(B)
APT25GR120B_SSCD10
052-6410 Rev A 1-2013
THERMAL AND MECHANICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol Characteristic Min Typ Max Unit
RθJC
Junction to Case Thermal Resistance (IGBT) .24
°C/W
Junction to Case Thermal Resistance (Diode) 1.00
RθJA Junction to Ambient Thermal Resistance 40
WTPackage Weight .22 oz
6.2 g
Torque Terminals and Mounting Screws. 10 in·lbf
1.1 N·m
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
Symbol Parameter Test Conditions Min Typ Max Unit
Cies Input Capacitance Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
2484
pF
Coes Output Capacitance 271
Cres Reverse Transfer Capacitance 75
VGEP Gate to Emitter Plateau Voltage Gate Charge
VGE = 15V
VCE= 600V
IC = 25A
7.5 V
Qg
3Total Gate Charge 154 203
nC
Qge Gate-Emitter Charge 20 27
Qgc Gate- Collector Charge 76 97
td(on) Turn-On Delay Time Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 25A
RG = 4.3 Ω 4
TJ = +25°C
16
ns
trCurrent Rise Time 10
td(off) Turn-Off Delay Time 122
tfCurrent Fall Time 20
Eon2
5Turn-On Switching Energy 434 650 µJ
Eoff
6Turn-Off Switching Energy 466 700
td(on) Turn-On Delay Time Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 25A
RG = 4.3 Ω 4
TJ = +125°C
16
ns
trCurrent Rise Time 10
td(off) Turn-Off Delay Time 136
tfCurrent Fall Time 28
Eon2
5Turn-On Switching Energy 506 760 µJ
Eoff
6Turn-Off Switching Energy 480 720
0
0.05
0.10
0.15
0.20
0.25
10-4 10-3 10-2 0.1 1
10-5
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
052-6410 Rev A 1-2013
APT25GR120B_SSCD10
TYPICAL PERFORMANCE CURVES
0
10
20
30
40
50
60
70
80
90
100
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
-50 0 50 100 150
0
1
2
3
4
5
6
6 8 10 12 14 16
0
40
80
120
160
200
0 2 4 6 8 10 12
0
20
40
60
80
100
120
140
160
180
0 4 8 12 16 20 24 28 32
0
50
100
150
200
0 2 4 6 8 10 12
250µs PULSE
TEST<0.5 % DUTY
CYCLE
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 12.5A
IC = 25A
IC = 50A
15V
VGE = 15V
TJ= - 55°C
TJ= 150°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Output Characteristics
IC, COLLECTOR CURRENT (A)
TJ= 25°C
TJ= 125°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4, Output Characteristics (TJ = 25°C)
IC, COLLECTOR CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6, Transfer Characteristics
IC, COLLECTOR CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TC, Case Temperature (°C)
FIGURE 9, DC Collector Current vs Case Temperature
IC, DC COLLECTOR CURRENT (A)
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE
FIGURE 8, Breakdown Voltage vs Junction Temperature
BVces, BREAKDOWN VOLTAGE
(NORMALIZED)
13V
IC(A)
FIGURE 2, Max Frequency vs Current (Tcase = 75°C)
0
50
100
150
200
250
300
350
0 10 20 30 40 50
FREQUENCY (kHz)
6.5V
7V
8.0V
8.5V
7.5V
9V
IC = 25A
IC = 50A
IC = 12.5A
TJ= 25°C TJ= -55°C
TJ= 125°C
TJ= 150°C
APT25GR120B_SSCD10
052-6410 Rev A 1-2013
TYPICAL PERFORMANCE CURVES
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200
IC = 25A
TJ = 25°C
VCE = 960V
VCE = 600V
VCE = 240V
GATE CHARGE (nC)
FIGURE 11, Gate charge vs. Gate-to-Emitter Voltage
VGE, GATE-TO-EMITTER VOLTAGE (V)
1
10
100
0 10 20 30 40 50
10
100
1000
0 10 20 30 40 50
100
1000
2000
0 25 50 75 100 125
0
500
1000
1500
0 10 20 30 40 50 60
0
200
400
600
800
1000
1200
1400
1600
1800
2000
10 20 30 40 50
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C or 125°C
Td(on)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-On Time vs Collector Current
SWITCHING TIME (ns)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-Off Time vs Collector Current
SWITCHING TIME (ns)
RG, GATE RESISTANCE (Ω)
FIGURE 15, Energy Loss vs Gate Resistance
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Energy Loss vs Collector Current
SWITCHING ENERGY LOSS (μJ)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (μJ)
Tr
Td(off)
Tf
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C
TJ = 125°C
VCE = 600V, VGE=15V, RG = 4.3Ω
TJ = 25°C
TJ = 125°C
VCE = 600V, VGE=15V, IC = 25A
TJ = 125°C
SWITCHING ENERGY LOSS (μJ)
VCE = 600V, VGE=15V, RG = 4.3Ω
IC = 25A
1.0E−11
1.0E−10
1.0E−9
1.0E−8
0 10 20 30 40 50
Coes
Cres
Cies
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (F)
1
10
100
200
1 10 100 1000 3000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 17, Minimum Switching Safe Operating Area
IC, COLLECTOR CURRENT (A)
Eon2
Eoff
Eon2
Eoff
Eon2
Eoff
100µs
10ms
.1ms
100ms
1ms
052-6410 Rev A 1-2013
APT25GR120B_SSCD10
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specied.
ZERO RECOVERY LOW LEAKAGE SIC ANTI-PARALLEL DIODE
TYPICAL PERFORMANCE CURVES
0
0. 2
0. 4
0. 6
0. 8
1
1. 2
10-4 10-3 10-2 0.1 1
10-5
RECTANGULAR PULSE DURATION (seconds)
FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
ZθJC, THERMAL IMPEDANCE (°C/W)
Peak T
J
= P
DM
x Z
θJC
+
TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
Symbol Characteristic / Test Conditions Ratings Unit
IFMaximum D.C. Forward Current TC = 25°C 36
Amps
TC = 135°C 10
IFRM Repetitive Peak Forward Surge Current (TJ = 45°C, tp = 10ms, Half Sine Wave) 50
IFSM Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine) 110
Symbol Characteristic / Test Conditions Min Typ Max Unit
VFForward Voltage
IF = 10A TJ = 25°C 1.5
Volts
IF = 10A, TJ = 150°C 2.1
QcTotal Capactive Charge VR = 800V, IF = 10A, di/dt = -100A/µs, TJ = 25°C 30 nC
CT
Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz 600
pFJunction Capacitance VR = 200V, TJ = 25°C, f = 1MHz 71
Junction Capacitance VR = 400V, TJ = 25°C, f = 1MHz 52
STATIC ELECTRICAL CHARACTERISTICS
0
5
10
15
20
0 2 4 6
0
5
10
15
20
25
30
35
40
25 50 75 100 125 150
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 19, Forward Current vs. Forward Voltage
IF, FORWARD CURRENT (A)
Case Temperature (°C)
FIGURE 20, Maximum Forward Current vs. Case Temperature
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ = 150°C
IF(peak) (A)
APT25GR120B_SSCD10
052-6410 Rev A 1-2013
TYPICAL PERFORMANCE CURVES
0
20
40
60
80
100
120
140
25 50 75 100 125 150
CASE TEMPERATURE (°C)
Figure 21. Maximum Power Dissipation vs. Case Temperature
Ptotal (w)
0
20
40
60
80
100 200 300 400 500 600 700 800 900
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (V)
Figure 22. Reverse Recovery Charge vs. VR
Qrr, REVERSE RECOVERY CHARGE
(nC)
VR, REVERSE VOLTAGE (V)
Figure 23. Junction Capacitance vs. Reverse Voltage
CJ, JUNCTION CAPACITANCE (pF)
dif/dt = -200A/μs
TJ = 125°C
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs. }
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead )
Collector
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
(Cathode)
(Anode)
(Cathode)
(Cathode)
(Anode)
(Cathode)
TO-247 Package Outline
Dimensions in Millimeters (Inches) Dimensions in Millimeters (Inches)
D3PAK Package Outline
1.016 (.040)
052-6410 Rev A 1-2013
APT25GR120B_SSCD10
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