DATA SHEET SHEET DATA SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. PACKAGE DIMENSIONS (Units: mm) The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique. +0.1 0.4 -0.05 1 3 +0.1 2 0.65 -0.15 0.4 -0.05 @f = 1.0 GHz @f = 1.0 GHz +0.1 1.5 0.95 1.2 dB TYP. 13 dB TYP. E- * NF * Ga 2.90.2 FEATURES 2.80.2 0.95 DESCRIPTION O UT MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Marking +0.1 0.16 -0.06 V V V mA mW C C 0.3 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 20 10 1.5 65 200 150 65 to +150 1.1 to 1.4 VCBO VCEO VEBO IC PT Tj Tstg PH AS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1 V, IE = 0 DC Current Gain hFE * Gain Bandwidth Product fT Feed-Back Capacitance Cre ** Maximum Available Gain 100 250 9 GHz 13 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz MAG 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz NF 1.2 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz 2 11 0.9 VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz Noise Figure 0.35 VCE = 8 V, IC = 20 mA pF S21e Insertion Power Gain 50 2.5 * Pulse Measurement PW 350 s, Duty Cycle 2 % ** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Class R33/Q * R34/R * R35/S * Marking R33 R34 R35 hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification Document No. P10360EJ4V1DS00 (4th edition) Date Published March 1997 N NE68133 / 2SC3583 TYPICAL CHARACTERISTICS (TA = 25 C) 200 50 100 150 TA-Ambient Temperature-C 0.5 0.3 0.2 50 1 5 10 50 GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT VCE = 8 V 20 MAG-Maximum Available Gain-dB |S21e|2-Insertion Gain -dB fT-Gain Bandwidth Product-MHz 2 30 5 VCE = 8 V f = 1.0 GHz 0 0.5 IC-Collector Current-mA 10 7 5 3 2 1 1 20 10 PH AS 20 30 2 3 5 7 10 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT E|S21e|2-Insertion Gain-dB hFE-DC Current Gain 0.7 15 VCE = 8 V 100 10 0.5 1 0.1 1 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 f = 1.0 MHz 2 O UT 100 0 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 3 Free air Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 3 5 7 10 IC-Collector Current-mA 20 30 1 5 10 50 70 IC-Collector Current-mA 20 16 INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 8 V IC = 20 mA MAG |S21e|2 12 8 4 0 0.1 0.2 0.3 0.5 0.7. 1.0 f-Frequency-GHz 2.0 3.0 NE68133 / 2SC3583 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 8 V f = 1.0 GHz 5 4 3 2 1 0 0.5 1 O UT NF-Noise Figure-dB 6 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 S11 S11 S12 S12 S22 S22 200 0.728 45.3 12.107 138.7 0.036 66.2 0.825 21.6 400 0.490 74.5 8.097 114.2 0.065 61.6 0.675 26.6 600 0.343 93.2 6.260 102.3 0.079 61.6 0.582 29.0 800 0.253 110.1 4.623 90.1 0.090 61.2 0.529 28.6 1000 0.202 131.1 4.004 83.6 0.101 61.3 0.500 30.1 1200 0.176 148.9 3.250 75.8 0.125 60.8 0.470 31.4 1400 0.176 162.8 3.021 69.4 0.144 60.0 0.448 33.4 1600 0.179 173.9 2.575 63.4 0.160 59.8 0.427 34.8 1800 0.186 163.3 2.520 58.9 0.188 59.1 0.406 37.5 2000 0.211 151.1 2.183 53.4 0.202 58.9 0.386 44.5 S21 S21 S12 S12 S22 S22 S21 E- S21 PH AS f (MHz) VCE = 8.0 V, IC = 20 mA, ZO = 50 f (MHz) S11 S11 200 0.366 66.8 19.757 116.9 0.033 62.6 0.587 22.5 400 0.194 88.9 10.502 98.8 0.055 70.6 0.485 23.8 600 0.124 104.3 7.591 91.1 0.072 74.6 0.453 24.3 800 0.077 132.0 5.446 82.0 0.095 73.2 0.419 23.2 1000 0.063 156.4 4.653 77.6 0.107 72.1 0.413 24.2 1200 0.065 179.5 3.754 71.6 0.135 72.1 0.392 26.4 1400 0.074 168.0 3.460 66.5 0.164 70.1 0.369 29.9 1600 0.108 147.0 2.934 61.9 0.178 69.6 0.347 32.2 1800 0.116 137.6 2.870 58.2 0.205 66.3 0.333 34.3 2000 0.134 131.2 2.479 53.4 0.221 64.0 0.312 42.1 3 NE68133 / 2SC3583 S-PARAMETER 1.4 1.2 1.0 0.9 1.6 0.7 1.8 2.0 5 0. O UT N ( -Z-+-J-XTANCE CO ) MPO 0 3. 4 0. 0.6 O 0.8 4.0 1.0 0 1. 6.0 0.6 5.0 1. 0 NE G 5 2.0 1.8 0.35 0.15 -70 0.36 0.14 -80 -90 0.37 0.13 0.38 0.12 0. 4 0. 3 07 30 -1 0.39 0.11 -100 0 -11 0.40 0.10 0.4 0.0 2 8 0 -1 2 0.4 1 0.0 9 E- 4 0.3 6 0.1 1.4 1.6 0.2 1.2 0 1.0 3 0.3 7 -6 0.9 0.1 0.8 18 0.7 32 0 0.6 0. -5 0. 20 10 4.0 3.0 1.8 2.0 1.6 1.4 1.2 0.7 0.8 0.6 0.4 0.3 ) 0.6 0.4 0. 0. 31 19 0. 0.2 0.9 1.0 0.8 0 ( 1.0 4.0 3. 0.1 E NC TA X AC -J--O- RE -Z 5.0 0 VCE = 8 V S12e-FREQUENCY PH AS 30 8 12 2.0 GHz 90 16 60 150 30 IC = 5 mA IC = 5 mA 0.2 GHz VCE = 8 V IC = 20 mA IC = 20 mA 4 CONDITION 120 60 0 0.2 8 0.2 2 -20 0.2 GHz -4 E IV AT 10 0.27 0.23 IC = 5 mA 0 . 2 9 0.2 1 0.3 -3 0.2 0 0 0 4 IC = 20 mA 0.2 GHz 8 0. S11e 50 0.5 0.4 2.0 GHz 0.6 -10 0.4 IC = 5 mA 0. 25 0.25 ) 50 0.26 0.24 ( 20 S22e 20 0.3 0.2 0.8 10 0 REACTANCE COMPONENT R ---- 0.2 ZO 150 180 0. 18 32 0. 50 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 WAVELE NG 0.1 0.3 7 3 600 1 0.2 9 0.2 30 0.2 GHz 0.1 6 0.3 4 0 0.2 0 0.3 120 70 2.0 GHz IC = 20 mA 0. 90 0.15 0.35 0.4 0.2 S21e-FREQUENCY CONDITION 0.14 0.36 80 0.2 T EN 0.1 0.3 0.13 0.37 90 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE -1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 -1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. -1 EA CO C 0 12 0.12 0.38 0.11 0.39 100 19 0. 31 0. 07 43 0. 0 13 0. 0.10 0.40 110 0.6 8 0.0 2 0.4 9 0.0 1 0.4 0.8 VCE = 8 V 200 MHz Step 0.2 S11e, S22e-FREQUENCY CONDITION S12e 0.2 GHz 0 180 20 0 0 0.04 0.08 0.12 0.16 0.20 S21e -150 -30 -60 -120 -90 4 -150 -30 -60 -120 -90 NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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