Dual IGBT
NFH-Series Module
300 Amperes/1200 Volts
CM300DU-24NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
04/13 Rev. 2 1
Description:
Powerex IGBT Modules are
designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM300DU-24NFH is a 1200V
(VCES), 300 Ampere Dual
IGBT Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 300 24
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.89±0.01 48.0±0.25
F 1.012 25.7
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Dimensions Inches Millimeters
Q 0.98 25.0
R 0.11 2.8
S M6 Metric M6
T 0.26 Dia. 6.5 Dia.
U 0.002 0.5
V 0.71 18.0
W 0.28 7.0
X 0.16 4.0
Y 0.3 7.5
Z 0.325 8.25
AA 0.35 8.85
AB 0.709 18.0
AC 0.69 17.5
G
H
H
W
UU
U
U
C2E1
E2 C1
E1
G1
E2
G2
G2E2E1G1
TC MEASUREMENT POINT
J
AC F
E B
A
D
K K K
NPQQ
V
W
V V
CL
Y
Y Y
M
R
X
W
S - NUTS (3 TYP.)
T - (4 TYP.)
Z
AB AA
LABEL
C2E1 C1E2
Q
CM300DU-24NFH
Dual IGBT NFH-Series Module
300 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
04/13 Rev. 22
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM300DU-24NF Units
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (Operation)*2 IC 300 Amperes
Peak Collector Current (Pulse)*2 ICM 600 Amperes
Emitter Current (Operation)*2 IE*1 300 Amperes
Peak Emitter Current (Pulse)*2 IEM*1 600 Amperes
Maximum Collector Dissipation (TC = 25°C) PC*3 1130 Watts
Maximum Collector Dissipation (TC' = 25°C)*7 PC'*3 1900 Watts
Junction Temperature Tj –40 ~ +150 °C
Storage Temperature Tstg –40 ~ +125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 Minute) VISO 2500 Volts
Mounting Torque, M6 Main Terminal — 40 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 400 Grams
Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 1 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts
IC = 300A, VGE = 15V, Tj = 125°C — 5.0 — Volts
Input Capacitance Cies — — 47 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 4.0 nf
Reverse Transfer Capacitance Cres — — 0.9 nf
Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1360 — nC
Turn-on Delay Time td(on) — — 300 ns
urn-on Rise Time tr VCC = 600V, IC = 300A, — — 80 ns
Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 500 ns
Turn-off Fall Time tf Inductive Load Switching Operation, — — 150 ns
Diode Reverse Recovery Time trr*1 IE = 300A — — 250 ns
Diode Reverse Recovery Charge Qrr*1 — 13 — µC
Emitter-Collector Voltage VEC*1 IE = 300A, VGE = 0V — — 3.5 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*7 Case temperature (TC') measured point is just under the chips.
CM300DU-24NFH
Dual IGBT NFH-Series Module
300 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
04/13 Rev. 2 3
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-1
101
01 3425
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6810 1412 16 18 20
8
6
4
2
0
Tj = 25°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
600
500
400
300
0515
200
100
020
VGE = 10V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 600A
IC = 300A
IC = 120A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246 810
100
0
VGE = 20V
10
11
12
13
14
15
9
8
Tj = 25°C
200
300
600
400
500
10
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
4
5
6
3
0100 300
7
2
8
1
0600400 500
VGE = 15V
Tj = 25°C
Tj = 125°C
200
10-1
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance*4 Rth(j-c)Q Per IGBT 1/2 Module — — 0.11 K/W
Junction to Case
Thermal Resistance*4 Rth(j-c)D Per FWDi 1/2 Module — — 0.18 K/W
Junction to Case
Contact Thermal Resistance*5 Rth(c-f) Per 1/2 Module, — 0.04 — K/W
Case to Heatsink Thermal Grease Applied
Thermal Resistance*7 Rth(j-c)'Q Per IGBT 1/2 Module — — 0.066*6 K/W
Junction to Case
Thermal Resistance*7 Rth(j-c)'D Per FWDi 1/2 Module — — 0.1*6 K/W
Junction to Case
External Gate Resistance RG 1.0 — 10 Ω
*4 Case temperature (TC') measured point is just under the chips.
*5 Case temperature (TC) measured point is shown on outline drawing.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 If you use this value, Rth(f-a) should be measured just under the chips.
CM300DU-24NFH
Dual IGBT NFH-Series Module
300 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
04/13 Rev. 24
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.11 K/W
(IGBT)
Rth(j-c) =
0.18 KW
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
400800 1200 20001600
VCC = 600V
VCC = 400V
IC = 300A
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
102
101102
101
100
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
ESW(on)
ESW(off)
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
102
100101
101
100
VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
ESW(on)
ESW(off)
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
100
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
tf
103
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102
102
101
103
102
101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
103
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive Load
Irr
trr
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
100101
101
100
VCC = 600V
VGE = ±15V
IE = 300A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
101102
101
100
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
Err
Err
