PJClamp0504A
PRELIMINARY
QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
SPECIFICATION FEATURES
APPLICATIONS
MAXIMUM RATINGS (Per Device)
Rating Symbol Value Units
This Quad TVS/Zener Array has been designed to Protect Sensitive Equipment
against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5Vdc and below. This TVS array offers an integrated solution to
protect up to four data lines where the board space is a premium.
100W Power Dissipation (8/20µs Waveform)
Low Leakage Current, Maximum of 0.5µA @ 5Vdc
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Very Low Clamping Voltage, Max of 10V @ 9Apk 8/20µs
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
Mobile Phones and Accessories
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C
Parameter Symbol Min Unit
s
Conditions Typical Max
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Off State Junction Capacitance
VWRM
VBR
IR
c
V
Vc
Cj
Cj
BR
I =
R
V =
I =
pp
I =
pp
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
5 Vdc Bias f = 1MHz
Between I/O pins and pin 2
5V
6 7.2 V
µA0.5
9V
10 V
90 pF
pF45
1 mA
5V
5A
9A
100
10
>25
-55 to +150
-55 to + 150
W
A
kV
°C
°C
Peak Pulse Power (8/20µs Waveform)
Peak Pulse Current (8/20µs Waveform)
ESD Voltage (HBM)
Operating Temperature Range
Storage Temperature Range
Ppp
Ipp
VESD
TJ
Tstg
12/6/2005 Page 1www.panjit.com
New SMT package QFN 1.6mm x 1.6mm; Max Height of 0.75mm
Max off state Capacitance of 90pF @ 0Vdc 1 MHz
Same Footprint compared to the SOT666 or EIAJ SC-89
Memory Card Port Protection
QFN 2X2
123
4
5
6
123
4
5
6
123
4
5
6
123
4
5
6
123
456
123
4
5
6
123
4
5
6
123
4
5
6
123
4
5
6
123
456
123
456
QFN 1.6x1.6 sq mm
Package
PRELIMINARY
PJClamp0504A
12/6/2005 Page 2 www.panjit.com
TYPICAL CHARACTERISTICS
C apacitance vs. B iasing Vo ltage @1MH z
30
40
50
60
70
80
90
100
012345
Bias Voltage, Vdc
Capacitance, p F
Clamping V oltage vs Ipp 8x20µsec Surge
0
1
2
3
4
5
6
7
8
9
10
67891011
Clamping Voltage, V
Ipp, Amps
N on-R epetitive Peak Pulse Power vs Pulse T im e
10
100
1000
1 10 100 1000
Pulse D uration, µsec
Peak Pulse Power - Ppp (W)
Pul se Wa vef o rm
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30
ti me, µsec
Percent of Ipp
50% of I pp @ 20µ s
Ri se ti me 10 -90% - 8µs
25°C unless otherwise noted
Typical Leakage Current vs Temperature
0.0001
0.0010
0.0100
0.1000
25 50 75 100 125 150
Temp,°C
Current, µA
3V
5V
PRELIMINARY
PJClamp0504A
12/6/2005 Page 3 www.panjit.com
TYPICAL APPLICATION EXAMPLE
1
2
3
4
PJClamp0504A
PACKAGE DIMENSIONS AND SUGGESTED BOND PAD LAYOUT
12/6/2005 Page 4 www.panjit.com
0.50 ± 0.05mm
0.20 ± 0.05mm
0.20 ± 0.05mm
1.1 ± 0.05mm
0.6 ± 0.05mm
1.60 ± 0.05mm
1 .60 ± 0.0 5mm
0.75 ± 0.05mm
0.203 ± 0.05 mm
TOP VIEW BOTTOM VIEW
SIDE VIEW
0.55mm
0.90 ± 0.05 m m
1.0 ± 0.05 m m
0.40 ± 0.05mm
0.25 ± 0.05 mm
0.50 ± 0.05 mm
1.00 ± 0.05 mm
0.40 ± 0.05 m m
0.25 ± 0.05 m m
0.50 ± 0.05 mm
PREFERRED ALTERNATE
