RANSYS MMBTA0O5 / MMBTA06 ELECTRONICS NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary PNP Types Available SOT-23 (MMBTAS55 / MMBTA56) | lea Dim Min Max Ideal for Medium Power Amplification and [e > A 0.37 | 0.51 Switching B | 119 | 1.40 TOP VIEW C Cc 2.10 2.50 Mechanical Data pD | oso | 105 le] le] oy Case: SOT-23, Molded Plastic - po FE | 045 | 0.61 Terminals: Solderable per MIL-STD-202, KS go G 1.78 | 2.05 Method 208 . . \ ++ H | 2.65 | 3.05 Terminal Connections: See Diagram rN 4 J 0013 | 045 wage Marking: KA BIH Bao: 2 cpa Fo arking: , Weight: 0.008 rants (approx.) al * C O46 | 0-61 gmenee 9 M | 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMBTA05 MMBTA06 Unit Collector-Base Voltage VcBo 60 80 Vv Collector-Emitter Voltage VcEO 60 80 Vv Emitter-Base Voltage VEBO 4.0 Vv Collector Current - Continuous (Note 1) le 500 mA Power Dissipation (Note 1) Pg 350 mW Thermal Resistance, Junction to Ambient (Note 1) R Ja 357 K/AW Operating and Storage and Temperature Range Tj, Tste -55 to +150 Cc Electrical Characteristics @ Ta= 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA05 60 9 MMBTAO6 | VieRICBO 80 V Ic= 100 A, le=0 Collector-Emitter Breakdown Voltage MMBTA05 WI g MMBTA06 V(BR)CEO Vv Ico = 1.0mA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 Vv lE=100 A, Ic =0 Collector Cutoff Current MMBTA05 Vcp = 60V, Ie =0 MMBTAO6 | _ !CBO 100 nA _| Vos = 80V, le=0 Collector Cutoff Current MMBTA05 Voce = 60V, Ino = OV MMBTAG6 | _ [CES 100 nA _| Vce= 80V, Ino = OV ON CHARACTERISTICS (Note 2) . lo = 10mA, Vce = 1.0V DC Current Gain hre 100 lc = 100MA, Vc = 1.0V Collector-Emitter Saturation Voltage VcE(SAT) 0.25 Vv Ic = 100mA, Ip = 10mMA Base- Emitter Saturation Voltage VBE(SAT) 1.2 Vv Ic = 100mA, Vce = 1.0V SMALL SIGNAL CHARACTERISTICS : . Voce = 2.0V, Ico = 10mA, Current Gain-Bandwidth Product fr 100 MHz f= 100MHz Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.