PROFET® ITS 724G
Infineon Technologies AG 1 of 14 2006-Mar-28
Smart High-Side Power Switch
For Industrial Applications
Four Channels: 4 x 90mΩ
Status Feedback
Product Summary Package
Operating Voltage Vbb 5.5...40V
Operating Temperature Ta -30…+85°C
Active channels one four parallel
On-state Resistance RON 90mΩ 22.5mΩ
Nominal load current IL(NOM) 3.3A 7.3A
Current limitation IL(SCr) 12A 12A
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial
applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Protection Functions Block Diagram
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD)
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in OFF-state
• Feedback of thermal shutdown in ON-state
Vbb
Logic
Channel 3
Channel 4
GND
Load 1
Load 2
Logic
Channel 1
Channel 2
Load 4
Load 3
IN1
ST1/2
IN2
IN3
ST3/4
IN4
PG-DSO-20
PROFET® ITS 724G
Infineon Technologies AG 2 of 14 2006-Mar-28
Functional diagram
. channel 1
OUT1
overvoltage
p
rotection
logic
internal
volta
g
e su
pp
l
y
ESD
temperature
sensor
clamp for
inductive load
gate
control
+
charge
pump
current limit
reverse
battery
protection
Open load
detection
control and protection circuit
of
channel 2
control and protection circuit
of
channel 3
control and protection circuit
of
channel 4
IN1
VBB
GND1/2
IN2
IN3
IN4
ST3/4
OUT2
OUT3
OUT4
LOAD
GND3/4
ST1/2
PROFET® ITS 724G
Infineon Technologies AG 3 of 14 2006-Mar-28
Pin Definitions and Functions
Pin Symbol Function
1,10,
11,12,
15,16,
19,20
Vbb Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
3 IN1
5 IN2
7 IN3
9 IN4
Input 1,2,3,4 activates channel 1,2,3,4 in case
of logic high signal
18 OUT1
17 OUT2
14 OUT3
13 OUT4
Output 1,2,3,4 protected high-side power output
of channel 1,2,3,4. Design the wiring for the
max. short circuit current
4 ST1/2
Diagnostic feedback 1/2,3/4 of channel 1,2,3,4
8 ST3/4 open drain, low on failure
2 GND1/2
Ground of chip 1 (channel 1,2)
6 GND3/4
Ground of chip 2 (channel 3,4)
Pin configuration
(top view)
Vbb 1 • 20 Vbb
GND1/2 2 19 Vbb
IN1 3 18 OUT1
ST1/2 4 17 OUT2
IN2 5 16 Vbb
GND3/4 6 15 Vbb
IN3 7 14 OUT3
ST3/4 8 13 OUT4
IN4 9 12 Vbb
Vbb 10 11 Vbb
PROFET® ITS 724G
Infineon Technologies AG 4 of 14 2006-Mar-28
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Vbb 36 V
Load current (Short-circuit current, see page 6) IL self-limited A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 Ω, td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 Ω,
VLoad dump3) 60 V
Junction temperature
Operating temperature range
Storage temperature range
Tj
Ta
Tstg
+150
-30 ... +85
-40 ... +105
°C
Power dissipation (DC)4) Ta = 25°C:
(all channels active) Ta = 85°C:
Ptot 3.6
1.9
W
Maximal switchable inductance, single pulse
Vbb = 12V, T
j,start = 150°C4), see diagrams on page 10
IL = 3.3 A, EAS = 120 mJ, 0 Ω one channel:
IL = 4.7 A, EAS = 140 mJ, 0 Ω two parallel channels:
IL = 7.3 A, EAS = 160 mJ, 0 Ω four parallel channels:
ZL 16,5
19
18
mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
VESD 1.0
4.0
8.0
kV
Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
IIN
IINp
IST
±0.3
±5.0
±5.0
mA
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
PROFET® ITS 724G
Infineon Technologies AG 5 of 14 2006-Mar-28
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance
junction - soldering point6)7) each channel: Rthjs -- -- 15 K/W
junction – ambient6)
@ 6 cm2 cooling area one channel active:
all channels active:
Rthja
--
--
42
34
--
--
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A
each channel, Tj = 25°C:
Tj = 150°C:
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
see diagram, page 11
RON
--
--
--
--
70
140
35
17.5
90
180
45
22.5
mΩ
Nominal load current one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB6), Ta = 85°C, Tj ≤ 150°C
IL(NOM) 3.0
4.3
6.5
3.3
4.7
7.3
--
--
--
A
Output current while GND disconnected or pulled up8);
Vbb = 32 V, VIN = 0,
see diagram page 9
IL(GNDhigh) -- -- 2 mA
Turn-on time9) IN to 90% VOUT:
Turn-off time IN to 10% VOUT:
RL = 12 Ω
ton
toff
--
--
100
100
250
270
µs
Slew rate on 9) 10 to 30% VOUT, RL = 12 Ω: dV/dton 0.2 -- 1.0 V/µs
Slew rate off 9) 70 to 40% VOUT, RL = 12 Ω:-dV/dtoff 0.2 -- 1.1 V/µs
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) Soldering point: upper side of solder edge of device pin 15. See page 14
8) not subject to production test, specified by design
9) See timing diagram on page 12.
PROFET® ITS 724G
Infineon Technologies AG 6 of 14 2006-Mar-28
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Operating Parameters
Operating voltage Vbb(on) 5.5 -- 40 V
Undervoltage switch off10) Tj =-40°C...25°C: Vbb(u so) -- -- 4.5 V
Tj =125°C: -- -- 4.511)
Overvoltage protection12)
I bb = 40 mA
Vbb(AZ) 41 47 52 V
Standby current13) Tj =-40°C...25°C:
VIN = 0; see diagram page 11 T
j =150°C:
Ibb(off) --
--
9
--
20
30 µA
Tj =125°C: -- -- 2011)
Off-State output current (included in Ibb(off))
VIN = 0; each channel
IL(off) -- 1 5 µA
Operating current 14), VIN = 5V,
IGND = IGND1 + IGND2, one channel on:
all channels on:
IGND
--
--
0.6
2.4
1.2
4.8
mA
Protection Functions15)
Current limit, Vout = 0V, (see timing diagrams, page 12)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
IL(lim) --
--
9
--
15
--
23
--
--
A
Repetitive short circuit current limit,
Tj = Tjt each channel
two,three or four parallel channels
(see timing diagrams, page 12)
IL(SCr) --
--
12
12
--
--
A
Initial short circuit shutdown time Tj,start =25°C:
Vout = 0V (see timing diagrams on page 12)
toff(SC) -- 2 -- ms
Output clamp (inductive load switch off)16)
at VON(CL) = Vbb - VOUT, IL= 40 mA
VON(CL) 41 47 52 V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
∆
Tjt -- 10 -- K
10) is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
11) not subject to production test, specified by design
12) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
13) Measured with load; for the whole device; all channels off
14) Add IST, if IST > 0
15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
16) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
PROFET® ITS 724G
Infineon Technologies AG 7 of 14 2006-Mar-28
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Reverse Battery
Reverse battery voltage 17) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb)
IL = - 2.0 A, Tj = +150°C
-VON -- 600 -- mV
Diagnostic Characteristics
Open load detection voltage V OUT(OL)1 1.7 2.8 4.0 V
Input and Status Feedback18)
Input resistance
(see circuit page 9)
RI 2.5 4.0 6.0 kΩ
Input turn-on threshold voltage VIN(T+) -- -- 2.5 V
Input turn-off threshold voltage VIN(T-) 1.0 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.2 -- V
Status change after positive input slope19)
with open load
td(STon) -- 10 20 µs
Status change after positive input slope19)
with overload
td(STon) 30 -- -- µs
Status change after negative input slope
with open load
td(SToff) -- -- 500 µs
Status change after negative input slope19)
with overtemperature
td(SToff) -- -- 20 µs
Off state input current VIN = 0.4 V: IIN(off) 5 -- 20 µA
On state input current VIN = 5 V: IIN(on) 10 35 60 µA
Status output (open drain)
Zener limit voltage IST = +1.6 mA:
ST low voltage IST = +1.6 mA:
VST(high)
VST(low)
5.4
--
--
--
--
0.6
V
17) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
18) If ground resistors RGND are used, add the voltage drop across these resistors.
19) not subject to production test, specified by design
PROFET® ITS 724G
Infineon Technologies AG 8 of 14 2006-Mar-28
Truth Table
Channel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2
Channel 3 and 4
(equivalent to channel 1 and 2)
Chip 2 IN3 IN4 OUT3 OUT4 ST3/4
Normal operation L
L
H
H
L
H
L
H
L
L
H
H
L
H
L
H
H
H
H
H
Open load Channel 1 (3) L
H
X
X
Z
H
X
X L20)
H
Channel 2 (4) X
X
L
H
X
X
Z
H
L15)
H
Overtemperature both channel L
X
H
L
H
X
L
L
L
L
L
L
H
L
L
Channel 1 (3) L
H
X
X
L
L
X
X
H
L
Channel 2 (4) X
X
L
H
X
X
L
L
H
L
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
PROFET
IN2
ST1/2
OUT2
GND1/2
Vbb
VOUT2
IGND1/2
V
ON2
18
2
Leadframe
3
4
IN1
VOUT1
V
ON1
IL1
OUT1
5
17
VIN1 VIN2 VST1/2
Ibb
IIN1
IIN2
IST1/2
IL2
RGND1/2
Vbb
Chip 1
PROFET
IN4
ST3/4
OUT4
GND3/4
Vbb
VOUT4
IGND3/4
V
ON4
14
6
Leadframe
7
8
IN3
VOUT3
V
ON3
IL3
OUT3
9
13
VIN3 VIN4 VST3/4
IIN3
IIN4
IST3/4
IL4
RGND3/4
Chip 2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
20) L, if potential at the Output exceeds the OpenLoad detection voltage
PROFET® ITS 724G
Infineon Technologies AG 9 of 14 2006-Mar-28
Input circuit (ESD protection), IN1 to IN4
IN
GND
I
R
ESD-ZD
I
I
I
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Status output, ST1/2 or ST3/4
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Inductive and overvoltage output clamp,
OUT1...4
+Vbb
OUT
VZ
VON
Power GND
VON clamped to VON(CL) = 47 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
GND
GND
R
Signal GND
Logic
VZ2
I
R
VZ1
Load GND
Load
R
OUT
ST
R
+ 5V
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Open-load detection, OUT1...4
OFF-state diagnostic condition:
Open Load, if VOUT > 3 V typ.; IN low
Open load
detection
Logic
unit
VOUT
Signal GND
OFF
REXT
Vbb
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb VIN VST V
GND
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
PROFET® ITS 724G
Infineon Technologies AG 10 of 14 2006-Mar-28
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb VGND
VIN VST
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
high
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
RL
L
{
L
Z
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= IL· L
2·RL(Vbb + |VOUT(CL)|) ln (1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off (one channel)4)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
ZL [mH]
1
10
100
1000
1234567891011
I
L [A]
PROFET® ITS 724G
Infineon Technologies AG 11 of 14 2006-Mar-28
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
160
120
80
40
0
5 7 9 11 30 40
Tj = 150°C
25°C
-40°C
V
bb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low
Ibb(off) [µA]
0
5
10
15
20
25
30
35
40
45
-50 0 50 100 150 200
T
j [°C]
PROFET® ITS 724G
Infineon Technologies AG 12 of 14 2006-Mar-28
Figure 1a: Vbb turn on:
IN2
V
OUT1
t
V
bb
ST1 open drain
IN1
VOUT2
ST2 open drain
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
IN
t
VOUT
IL
t
t
on
off
90%
dV/dton
dV/dtoff
10%
Figure 2b: Switching a lamp:
IN
ST
OUT
L
t
V
I
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
other channel: normal operation
t
I
ST
IN1
L1
L(SCr)
I
IL(lim)
toff(SC)
Heating up of the chip may require several milliseconds, depending
on external conditions
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4
PROFET® ITS 724G
Infineon Technologies AG 13 of 14 2006-Mar-28
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
t
ST1/2
IN1/2
L1 L2
L(SCr)
I
2xIL(lim)
I + I
toff(SC)
ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
OUT
J
t
V
T
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
Open load of channel 1; other channels normal
operation
OUT1
V
ST
IN1
IL1
10µs 500µs
Figure 6a: Status change after, turn on/off to
overtemperature
Overtemperature of channel 1; other channels normal
operation
ST
IN1
30µs 20µs
PROFET® ITS 724G
Infineon Technologies AG 14 of 14 2006-Mar-28
Package and Ordering Code
Standard: PG-DSO20-15
Sales Code ITS 724G
Ordering Code SP000219835
All dimensions in millimetres
Definition of soldering point with temperature Ts:
upper side of solder edge of device pin 15.
Pin 15
Printed circuit board (FR4, 1.5mm thick, one layer
70µm, 6cm2 active heatsink area) as a reference for
max. power dissipation Ptot, nominal load current
IL(NOM) and thermal resistance Rthja
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2006
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and
shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited
to warranties of non-infringement, regarding circuits, descriptions
and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions
and prices please contact your nearest Infineon Technologies Office
in Germany or our Infineon Technologies Representatives worldwide
(see address list).
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substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support
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Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system, or
to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the
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