PROFET(R) ITS 724G Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 90m Status Feedback Product Summary Operating Voltage Vbb Operating Temperature Ta Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package PG-DSO-20 5.5...40V -30...+85C one four parallel 90m 22.5m 3.3A 7.3A 12A 12A General Description * * N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions Applications * * * * C compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial applications All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions * * * * * * * Very low standby current CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground Protection Functions * * * * * * * * Block Diagram Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD) Diagnostic Function * * * IN1 ST1/2 IN2 Logic Channel 1 Channel 2 IN3 ST3/4 Logic Channel 3 Channel 4 GND 1 of 14 Load 1 Load 2 IN4 Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state Infineon Technologies AG Vbb Load 3 Load 4 2006-Mar-28 PROFET(R) ITS 724G Functional diagram overvoltage protection internal voltage supply logic gate control + charge pump current limit VBB clamp for inductive load OUT1 IN1 ESD temperature sensor reverse battery protection Open load detection . LOAD channel 1 ST1/2 IN2 control and protection circuit of channel 2 GND1/2 IN3 OUT2 control and protection circuit of channel 3 OUT3 ST3/4 IN4 control and protection circuit of channel 4 GND3/4 Infineon Technologies AG OUT4 2 of 14 2006-Mar-28 PROFET(R) ITS 724G Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Vbb IN1 IN2 IN3 IN4 OUT1 OUT2 OUT3 OUT4 ST1/2 ST3/4 GND1/2 GND3/4 Pin configuration Function Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal Output 1,2,3,4 protected high-side power output of channel 1,2,3,4. Design the wiring for the max. short circuit current (top view) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 * 20 19 18 17 16 15 14 13 12 11 Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb Diagnostic feedback 1/2,3/4 of channel 1,2,3,4 open drain, low on failure Ground of chip 1 (channel 1,2) Ground of chip 2 (channel 3,4) Infineon Technologies AG 3 of 14 2006-Mar-28 PROFET(R) ITS 724G Maximum Ratings at Tj = 25C unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection Tj,start = -40 ...+150C Load current (Short-circuit current, see page 6) Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 , td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 , Junction temperature Operating temperature range Storage temperature range Power dissipation (DC)4) Ta = 25C: (all channels active) Ta = 85C: Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150C4), see diagrams on page 10 IL = 3.3 A, EAS = 120 mJ, 0 one channel: IL = 4.7 A, EAS = 140 mJ, 0 two parallel channels: IL = 7.3 A, EAS = 160 mJ, 0 four parallel channels: Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: Vbb Vbb IL VLoad dump3) Tj Ta Tstg Ptot ZL VESD Values Unit 43 36 V V self-limited 60 A V +150 -30 ... +85 -40 ... +105 C 3.6 1.9 W 16,5 19 18 mH 1.0 4.0 8.0 kV -10 ... +16 0.3 5.0 5.0 V mA acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC) 1) 2) 3) 4) 5) VIN IIN IINp IST Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 only for testing Infineon Technologies AG 4 of 14 2006-Mar-28 PROFET(R) ITS 724G Thermal Characteristics Parameter and Conditions Thermal resistance junction - soldering point6)7) junction - ambient6) @ 6 cm2 cooling area Symbol each channel: Rthjs Rthja one channel active: all channels active: min Values typ max -- -- 15 --- 42 34 --- Unit K/W Electrical Characteristics Parameter and Conditions, each of the four channels Symbol at Tj = -40...+150C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 2 A each channel, Tj = 25C: RON Tj = 150C: two parallel channels, Tj = 25C: four parallel channels, Tj = 25C: Values min typ max Unit ----- 70 140 35 17.5 90 180 45 22.5 m 3.0 4.3 6.5 3.3 4.7 7.3 ---- A Output current while GND disconnected or pulled up8); IL(GNDhigh) -- -- 2 mA IN IN --- 100 100 250 270 s 0.2 0.2 --- 1.0 1.1 V/s V/s see diagram, page 11 Nominal load current one channel active: IL(NOM) two parallel channels active: four parallel channels active: Device on PCB6), Ta = 85C, Tj 150C Vbb = 32 V, VIN = 0, see diagram page 9 Turn-on time9) Turn-off time RL = 12 Slew rate on 9) Slew rate off 9) 6) 7) 8) 9) to 90% VOUT: ton to 10% VOUT: toff 10 to 30% VOUT, RL = 12 : dV/dton 70 to 40% VOUT, RL = 12 : -dV/dtoff Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 14 Soldering point: upper side of solder edge of device pin 15. See page 14 not subject to production test, specified by design See timing diagram on page 12. Infineon Technologies AG 5 of 14 2006-Mar-28 PROFET(R) ITS 724G Parameter and Conditions, each of the four channels Symbol at Tj = -40...+150C, Vbb = 12 V unless otherwise specified Operating Parameters Operating voltage Undervoltage switch off10) Overvoltage protection12) I bb = 40 mA Standby current13) VIN = 0; see diagram page 11 Vbb(on) Tj =-40C...25C: Vbb(u so) Tj =125C: Vbb(AZ) Tj =-40C...25C: Ibb(off) Tj =150C: Tj =125C: Off-State output current (included in Ibb(off)) IL(off) VIN = 0; each channel Operating current 14), VIN = 5V, IGND = IGND1 + IGND2, one channel on: IGND all channels on: Protection Functions15) Current limit, Vout = 0V, (see timing diagrams, page 12) Tj =-40C: IL(lim) Tj =25C: Tj =+150C: Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) two,three or four parallel channels Values min typ max Unit 5.5 --41 ---47 40 4.5 4.511) 52 V V ----- 9 --1 20 30 2011) 5 A --- 0.6 2.4 1.2 4.8 mA --9 -15 -- 23 --- A --- 12 12 --- A -- 2 -- ms 41 47 52 V 150 -- -10 --- C K V A (see timing diagrams, page 12) Initial short circuit shutdown time Vout = 0V Tj,start =25C: toff(SC) (see timing diagrams on page 12) Output clamp (inductive load switch off)16) VON(CL) at VON(CL) = Vbb - VOUT, IL= 40 mA Thermal overload trip temperature Thermal hysteresis 10) 11) 12) 13) 14) 15) 16) Tjt Tjt is the voltage, where the device doesnt change its switching condition for 15ms after the supply voltage falling below the lower limit of Vbb(on) not subject to production test, specified by design Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 9. Measured with load; for the whole device; all channels off Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) Infineon Technologies AG 6 of 14 2006-Mar-28 PROFET(R) ITS 724G Parameter and Conditions, each of the four channels Symbol at Tj = -40...+150C, Vbb = 12 V unless otherwise specified Reverse Battery Reverse battery voltage 17) Drain-source diode voltage (Vout > Vbb) IL = - 2.0 A, Tj = +150C -Vbb -VON Values min typ max Unit --- -600 32 -- V mV Diagnostic Characteristics Open load detection voltage V OUT(OL) 1.7 2.8 4.0 V Input and Status Feedback18) Input resistance RI 2.5 4.0 6.0 k VIN(T+) VIN(T-) VIN(T) td(STon) -1.0 --- --0.2 10 2.5 --20 V V V s td(STon) 30 -- -- s td(SToff) -- -- 500 s td(SToff) -- -- 20 s IIN(off) IIN(on) 5 10 -35 20 60 A A VST(high) VST(low) 5.4 -- --- -0.6 V 1 (see circuit page 9) Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Status change after positive input slope19) with open load Status change after positive input slope19) with overload Status change after negative input slope with open load Status change after negative input slope19) with overtemperature Off state input current VIN = 0.4 V: On state input current VIN = 5 V: Status output (open drain) Zener limit voltage IST = +1.6 mA: ST low voltage IST = +1.6 mA: 17) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 9). 18) If ground resistors R GND are used, add the voltage drop across these resistors. 19) not subject to production test, specified by design Infineon Technologies AG 7 of 14 2006-Mar-28 PROFET(R) ITS 724G Truth Table Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2) Chip 1 Chip 2 Normal operation Channel 1 (3) Open load Channel 2 (4) both channel Overtemperature Channel 1 (3) Channel 2 (4) L = "Low" Level H = "High" Level IN1 IN3 IN2 IN4 OUT1 OUT3 OUT2 OUT4 ST1/2 ST3/4 L L H H L H L H L H X X L L H H Z H L H L H X X H H H H X X L X H L H X X L H L H X X X L H X X L L L L L X X Z H L L L X X L L L20) H L15) H H L L H L H L X = don't care Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms V Ibb bb I IN2 I ST1/2 V V ON1 V ON2 Leadframe I IN1 IN1 V IN2 VST1/2 3 5 4 Vbb IN1 IN2 OUT1 PROFET Chip 1 OUT2 ST1/2 GND1/2 I L1 17 I L2 V 2 R 18 I GND1/2 I IN4 I ST3/4 V OUT1 V ON3 V ON4 Leadframe I IN3 IN3 V IN4 VST3/4 7 9 8 Vbb IN3 IN4 OUT3 PROFET Chip 2 ST3/4 GND3/4 R I L3 13 I L4 V 6 V OUT2 GND1/2 OUT4 14 IGND3/4 OUT3 V OUT4 GND3/4 Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1, RGND2 = 150 or a single resistor RGND = 75 for reverse battery protection up to the max. operating voltage. 20) L, if potential at the Output exceeds the OpenLoad detection voltage Infineon Technologies AG 8 of 14 2006-Mar-28 PROFET(R) ITS 724G Input circuit (ESD protection), IN1 to IN4 Overvolt. and reverse batt. protection + 5V R IN I + Vbb R ST V IN ESD-ZD I I RI I Z2 Logic GND R ST ST OUT V Z1 The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. GND R GND Signal GND Status output, ST1/2 or ST3/4 ST Open-load detection, OUT1...4 ESDZD GND Load GND VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ. In case of reverse battery the load current has to be limited by the load. Temperature protection is not active +5V R ST(ON) R Load ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. OFF-state diagnostic condition: Open Load, if VOUT > 3 V typ.; IN low V Inductive and overvoltage output clamp, bb R EXT OUT1...4 OFF V +Vbb VZ Logic unit V OUT Open load detection ON OUT Signal GND GND disconnect Power GND VON clamped to VON(CL) = 47 V typ. IN Vbb PROFET OUT ST GND V bb V IN V ST V GND Any kind of load. In case of IN = high is VOUT VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. Infineon Technologies AG 9 of 14 2006-Mar-28 PROFET(R) ITS 724G GND disconnect with GND pull up Inductive load switch-off energy dissipation E bb IN Vbb E AS PROFET OUT IN ST ELoad Vbb GND PROFET V V bb = V IN ST V OUT L ST GND GND ZL { Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Vbb disconnect with energized inductive load high IN R L 2 EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : OUT IL* L EAS= 2*R (Vbb + |VOUT(CL)|) ST L GND V ER Energy stored in load inductance: Vbb PROFET EL ln (1+ |V IL*RL OUT(CL)| ) Maximum allowable load inductance for a single switch off (one channel)4) bb L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 10) each switch is protected against loss of Vbb. ZL [mH] 1000 Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. 100 10 1 1 2 3 4 5 6 7 8 9 10 11 IL [A] Infineon Technologies AG 10 of 14 2006-Mar-28 PROFET(R) ITS 724G Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mOhm] Tj = 150C 160 120 25C 80 -40C 40 0 5 7 9 11 30 40 Vbb [V] Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low Ibb(off) [A] 45 40 35 30 25 20 15 10 5 0 -50 0 50 100 150 200 Tj [C] Infineon Technologies AG 11 of 14 2006-Mar-28 PROFET(R) ITS 724G Timing diagrams All channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4 Figure 2b: Switching a lamp: Figure 1a: Vbb turn on: IN1 IN IN2 V bb ST V OUT1 V V OUT OUT2 ST1 open drain I L ST2 open drain t t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling IN IN1 other channel: normal operation VOUT I 90% t on L1 dV/dtoff I L(lim) I dV/dton 10% t L(SCr) off t IL ST off(SC) t t Heating up of the chip may require several milliseconds, depending on external conditions Infineon Technologies AG 12 of 14 2006-Mar-28 PROFET(R) ITS 724G Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) Figure 5a: Open load: detection in OFF-state, turn on/off to open load Open load of channel 1; other channels normal operation IN1/2 IN1 I L1 +I VOUT1 L2 2xIL(lim) I L1 I t L(SCr) ST off(SC) ST1/2 10s 500s t ST1 and ST2 have to be configured as a 'Wired OR' function ST1/2 with a single pull-up resistor. Figure 6a: Status change after, turn on/off to overtemperature Overtemperature of channel 1; other channels normal operation Figure 4a: Overtemperature: Reset if Tj <Tjt IN1 IN ST ST 30s 20s V OUT T J t Infineon Technologies AG 13 of 14 2006-Mar-28 PROFET(R) ITS 724G Package and Ordering Code Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2006 All Rights Reserved. Standard: PG-DSO20-15 Sales Code ITS 724G Ordering Code SP000219835 All dimensions in millimetres Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Pin 15 Printed circuit board (FR4, 1.5mm thick, one layer 70m, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja Infineon Technologies AG 14 of 14 2006-Mar-28