PIN3
COLLECTOR
(OUTPUT)
PIN1
EMITTER
(GROUND)
PIN2
BASE
(INPUT)
R1
R2
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor . The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Base Voltage VCBO 50 Vdc
Collector–Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°CPD*200
1.6 mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted) RθJA 625 °C/W
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath TL260
10 °C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1(2)
8A
8B
8C
8D
8E
10
22
47
10
10
10
22
47
47
∞
MUN2216T1(2)
MUN2230T1(2)
MUN2231T1(2)
MUN2232T1(2)
MUN2233T1(2)
MUN2234T1(2)
8F
8G
8H
8J
8K
8L
4.7
1.0
2.2
4.7
4.7
22
∞
1.0
2.2
4.7
47
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN2211T1/D
SEMICONDUCTOR TECHNICAL DATA
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 318D–03, STYLE 1
(SC–59)
21
3
Motorola, Inc. 1996
REV 4
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) ICBO — — 100 nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc
Emitter–Base Cutoff Current MUN2211T1
(VEB = 6.0 V, IC = 0) MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
IEBO —
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc
Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc
ON CHARACTERISTICS(3)
DC Current Gain MUN2211T1
(VCE = 10 V, IC = 5.0 mA) MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
350
350
5.0
15
30
200
150
—
—
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1
(IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
VCE(sat) — — 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN2211T1
MUN2212T1
MUN2214T1
VOL —
—
—
—
—
—
0.2
0.2
0.2
Vdc
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN2213T1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2215T1
MUN2216T1
MUN2233T1
VOH 4.9 — — Vdc
Input Resistor MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
k Ω
Resistor Ratio MUN2211T1/MUN2212T1/MUN2213T1
MUN2214T1
MUN2215T1/MUN2216T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
R1/R2 0.8
0.17
—
0.8
0.055
0.38
1.0
0.21
—
1.0
0.1
0.47
1.2
0.25
—
1.2
0.185
0.56
Figure 1. Derating Curve
250
200
150
100
50
0–50 0 50 100 150
TA, AMBIENT TEMPERATURE (
°
C)
PD, POWER DISSIPATION (MILLIWATTS)
R
θ
JA = 625
°
C/W
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2211T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
100 20 30
IC, COLLECTOR CURRENT (mA)
10
1
0.1
VO = 0.2 V TA= –25
°
C
75
°
C
25
°
C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 0 20 40 60 80
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA= 75
°
C
25
°
C
–25
°
C
TA= –25
°
C
25
°
C
IC/IB = 10
Figure 5. Output Current versus Input Voltage
75
°
C25
°
C
TA= –25
°
C
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 6. Input Voltage versus Output Current
50
0 10 20 30 40
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75
°
C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
°
C
VO = 5 V
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2212T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA= 75
°
C
25
°
C
–25
°
C
100
101 100
75
°
C 25
°
C
100
0Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 2 4 6 8 10
TA= –25
°
C
0IC, COLLECTOR CURRENT (mA)
100 VO = 0.2 V
TA= –25
°
C
75
°
C
10
1
0.1 10 20 30 40 50
25
°
C
Figure 11. Input Voltage versus Output Current
0.001
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
25
°
C
IC/IB = 10
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
0 20 60 80
50
0 10 20 30 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
°
C
VO = 5 V
TA= –25
°
C
75
°
C
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2213T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
0 2 4 6 8 10
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA= –25
°
C
75
°
C25
°
C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA= 75
°
C
25
°
C
–25
°
C
100
10 1 100
Figure 16. Input Voltage versus Output Current
0 20 40 60 80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
TA= –25
°
C
25
°
C75
°
C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TA= –25
°
C25
°
C
75
°
C
50
0 10 20 30 40
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25
°
C
VO = 5 V
VO = 0.2 V
IC/IB = 10
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2214T1
10
1
0.10 10 20 30 40 50
100
10
10 2 4 6 8 10
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0 20 40 60 80
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25
°
C
25
°
C
TA= 75
°
C
VCE = 10
300
250
200
150
100
50
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25
°
C
TA= –25
°
C
25
°
C
75
°
C
IC/IB = 10
75
°
C25
°
C
TA= –25
°
C
VO = 5 V
VO= 0.2 V TA= –25
°
C
25
°
C
75
°
C
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
VCC
ISOLATED
LOAD
FROM
µ
P OR
OTHER LOGIC
+12 V
Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source
9
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
mm
inches
2.5–3.0
0.039
1.0
0.094
0.8
0.098–0.118
2.4
0.031
0.95
0.037
0.95
0.037
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the pad
size. This can vary from the minimum pad size for soldering
to the pad size given for maximum power dissipation. Power
dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
RθJA, the thermal resistance from the device junction to
ambient; and the operating temperature, TA. Using the
values provided on the data sheet, PD can be calculated as
follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
PD = 150°C – 25°C
625°C/W = 200 milliwatts
The 625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a power dissipation of 400 milliwatts can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
•The soldering temperature and time should not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
10 Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SC–59 package should be
the same as the pad size on the printed circuit board, i.e., a
1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 25 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177–189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT STEP 7
COOLING
200
°
C
150
°
C
100
°
C
50
°
C
TIME (3 TO 7 MINUTES TOTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205
°
TO 219
°
C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
100
°
C
150
°
C160
°
C
170
°
C
140
°
C
Figure 25. Typical Solder Heating Profile
11
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 318D–03
ISSUE E
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
S
G
H
D
C
B
L
A
1
3
2
J
K
DIM
AMIN MAX MIN MAX
INCHES
2.70 3.10 0.1063 0.1220
MILLIMETERS
B1.30 1.70 0.0512 0.0669
C1.00 1.30 0.0394 0.0511
D0.35 0.50 0.0138 0.0196
G1.70 2.10 0.0670 0.0826
H0.013 0.100 0.0005 0.0040
J0.10 0.26 0.0040 0.0102
K0.20 0.60 0.0079 0.0236
L1.25 1.65 0.0493 0.0649
S2.50 3.00 0.0985 0.1181
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
SC–59
12 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MUN2211T1/D
*MUN2211T1/D*
◊