Data Sheet Schottky Barrier Diode RB751SM-40 lApplications High speed switching lDimensions (Unit : mm) 0.120.05 0.8 0.6 0.80.05 lLand size figure (Unit : mm) 1.60.1 1.20.05 1.7 lFeatures 1)Ultra small mold type. (EMD2) 2)High reliability EMD2 lConstruction Silicon epitaxial 0.30.05 lStructure 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz1cyc) Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Limits 40 30 30 200 150 Unit V V mA mA C C -40 to +150 Min. Typ. Max. Unit - - 0.37 V IF=1mA VR=30V VR=1V , f=1MHz Reverse current IR - - 0.5 A Capacitance between terminals Ct - 2 - pF www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/3 Conditions 2011.06 - Rev.A Data Sheet RB751SM-40 10 1000 10 Ta=75 1 Ta=-25 Ta=25 0.1 Ta=75 10 1 Ta=25 0.1 Ta=-25 0.01 0.001 0.01 0 100 200 300 400 500 600 700 800 900 1000 0.1 30 0 290 280 AVE:282.4mV 270 260 Ta=25 VR=30V n=30pcs 800 700 600 500 400 AVE:245.2nA 300 200 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 300 REVERSE CURRENT:IR(nA) 310 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 10 AVE:3.24A 0 4 AVE:2.1pF 3 2 0 Ct DISPERSION MAP 10 IF=0.1A IR=0.1A 25 Irrr=0.1*IR 20 15 AVE:7.7ns 10 5 1cyc 5 1 t 10 5 0 100 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 0.05 Mounted on epoxy board Rth(j-a) 0.04 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 20 10 8.3ms 8.3ms trr DISPERSION MAP IFSM DISPERSION MAP 15 Ifsm 0 0 1 5 1 30 15 0.1 6 IR DISPERSION MAP 20 5 7 0 VF DIPERSION MAP 30 Ta=25 f=1MHz VR=1V n=10pcs 8 100 250 20 10 900 Ta=25 IF=1mA n=30pcs 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 320 FORWARD VOLTAGE:VF(mV) 20 1 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Rth(j-c) 100 D=1/2 0.03 Sin(180) 0.02 DC 0.01 10 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2011.06 - Rev.A Data Sheet 0.1 0.008 0.08 0.006 D=1/2 0.004 DC Sin(180) 0.002 0 0.10 0A Io 0V VR t 0.06 T DC 0.04 D=t/T VR=15V Tj=150 D=1/2 0.02 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.08 0A Io 0V VR t 0.06 DC 0.04 D=1/2 T D=t/T VR=15V Tj=150 0.02 Sin(180) Sin(180) 0.00 0 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.01 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) RB751SM-40 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() DERATING CURVE (Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() DERATING CURVE (Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 5 4.5 4 3.5 3 AVE:3.34kV 2.5 2 AVE:0.418kV 1.5 1 0.5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A