Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB751SM-40
lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm)
High speed switching
lFeatures
1)Ultra small mold type. (EMD2)
2)High reliability
lConstruction
Silicon epitaxial
lStructure
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io mA
IFSM mA
Tj °C
Tstg °C
lElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF- - 0.37 V IF=1mA
IR- - 0.5 μA VR=30V
Ct - 2 - pF
VR=1V , f=1MHz
Storage temperature
-40 to +150
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Average rectified forward current
30
Forward current surge peak (60Hz・1cyc)
200
Junction temperature
150
Parameter
Limits
Reverse voltage (repetitive)
40
Reverse voltage (DC)
30
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
dot (year week factory)
EMD2
0.8
1.7
0.6
1/3
2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB751SM-40
0.00
0.01
0.02
0.03
0.04
0.05
0.00 0.01 0.02 0.03 0.04 0.05
Sin(θ＝180)
D=1/2
DC
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
0
5
10
15
20
0.1 1 10 100
t
Ifsm
0
5
10
110 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
AVE:3.24A
8.3ms
Ifsm 1cyc
0
1
2
3
4
5
6
7
8
9
10
AVE:2.1pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
0.1
1
10
010 20 30
f=1MHz
250
260
270
280
290
300
310
320
AVE:282.4mV
Ta=25℃
IF=1mA
n=30pcs
0
100
200
300
400
500
600
700
800
900
1000
AVE:245.2nA
Ta=25℃
VR=30V
n=30pcs
0.001
0.01
0.1
1
10
100
1000
010 20 30
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.01
0.1
1
10
100
0100 200 300 400 500 600 700 800 9001000
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
Mounted on epoxy board
0
5
10
15
20
25
30
AVE:7.7ns
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
IF=0.1A
IR=0.1A
Irrr=0.1*IR
2/3 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB751SM-40
0.00
0.02
0.04
0.06
0.08
0.10
025 50 75 100 125 150
Sin(θ＝180)
D=1/2
DC
0
0.02
0.04
0.06
0.08
0.1
025 50 75 100 125 150
Sin(θ＝180)
D=1/2
DC
0
0.002
0.004
0.006
0.008
0.01
010 20 30
Sin(θ＝180)
DC
D=1/2
REVERSE POWER
DISSIPATION:PR (W)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(
℃
)
DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
DERATING CURVE (Io-Tc)
T
Tj=150℃
D=t/T
t
VR
Io
VR=15V
0A
0V
T
Tj=150℃
D=t/T
t
VR
Io
VR=15V
0A
0V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
AVE:0.418kV
AVE:3.34kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
3/3 2011.06 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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