T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 1 of 7
1N6138A – 1N6173A
Available on
commercial
versions
Voidless Hermetically Sealed Bidirectional
Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
Qualified Levels:
JAN, JAN TX, JAN TXV
and JANS
DESCRIPTION
This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage
Suppressors (TVS) are military qualified to MIL-PRF-1950 0/51 6 and ar e id e al f or high-reliability
applications where a failure cannot be toler ated. Th ey pro vide a working peak “standoff” voltage
selection from 5.2 to 15 2 Vol ts wi th a 1500 W rating f or a 10/10 0 0 µs p ulse. They are very robust
i n har d -glass construction and use internal Category 1 metallurgical bonds for high reliability.
Thes e d evi ces are avai labl e as b oth a n on-suffix part and an “A” version part involving different
vol tag e t oler a nces as des cr i bed i n the nomenclature section. The se devices are al so avail able in a
surface mount MELF package configuration.
“C” Package
Also available in:
“C” SQ-MELF
Package
(s urf ace mount)
1N6138US – 1N6173US
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• High surge current and peak pulse power provides transient voltage protecti on for sensitive circuits
• Triple-layer passivation
• Internal “Category 1” metallurgical bonds
• Voidless hermetically sealed glass package
• JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516.
(See part nomenclature for all available options .)
• RoHS com pliant versions available (commercial grade only)
APPLICATIONS / BENE FITS
• Military and other high-reliability applications
• Extremely robust construction
• Extensive range in working peak “standoff” vol tage (VWM) from 5.2 to 152 volts
• 1500 watt peak pulse power (PPP) for a 10/1000 us test pulse
• ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively
• Protection from the secondary effects of lightning per select levels in IEC61000-4-5.
• Flexible axial-leaded mounting terminals
• Non-sensitive to ESD per MIL-STD-750 method 1020
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”
MAXIMUM RATINGS @ TA = 25 oC u nless otherwise n oted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and St orage Temperature
T
J
and T
STG
-55 to +175
oC
Thermal Resistance Junction-to-Lead (1)
RӨJL
20
oC/W
Peak Pulse Power @ 25 ºC
PPP
1500
W
Off-State Power @ TL = 75 oC (1)
PD
5.0
W
Off-State Power @
TA = 25 oC (2)
PD
3.0
W
Impul se Repetition Rate
df
0.01
%
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. At 3/8 inch lead length from body (see fi gure 4).
2. Steady-state pow er ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficientl y controlled where TOP or TJ(MAX) is not exceeded (also see
figure 6).
T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 2 of 7
1N6138A – 1N6173A
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed voidless hard glass with tung sten slug s
• TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available on commercial grade only.
• MARKING: Body paint and part number
• POLARITY: No polarity marking for these bidirectional TVSs
• TAPE & REEL option: Standard per EIA -296. Consult factory for quantities.
• WEIGHT: Approximately 1270 milligrams
• See package dimensions on last page.
PART NOMENCLATURE
JAN 1N6138 A e3
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Voltage Tolerance
A = Standard
Blank =5% higher VC, 5% lower
min. V(BR) and 5% lower IPP
SYMBOL S & DEFI NITIONS
Symbol
Definition
αV(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that cau sed it expressed in %/°C or mV/°C.
V(BR)
Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region.
VWM
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
ID
Standby Current: The current through the device at rated stand-off voltage.
VC
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
PPP
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse pow er. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 3 of 7
1N6138A – 1N6173A
ELECTRI CAL CHARACTERISTICS
INDUSTRY
TYPE
NUMBER
(Note 1)
MINIMUM
BREAKDOWN
VOLTAGE
(Note 1)
V(BR) @ I(BR)
RATED
STANDOFF
VOLTAGE
VWM
MAXIMUM
STANDBY
CURRENT
ID @ VWM
MAXIMUM
CLAMPING
VOLTAGE
(Note 1)
VC @ IPP
MAXIMUM
PEAK PULSE
CURRENT
(Note 1)
IPP
MAXIMUM
TEMP.
COEF. OF
V(BR)
αV(BR)
Volts
mA
V
µA
Volts
Amps
%/oC
1N6138A
6.46
175
5.2
500
10.5
142.8
0.05
1N6139A
7.13
175
5.7
300
11.2
133.9
.06
1N6140A
7.79
150
6.2
100
12.1
124.0
.06
1N6141A
8.65
150
6.9
100
13.4
111.9
.06
1N6142A
9.50
125
7.6
100
14.5
103.4
.07
1N6143A
10.45
125
8.4
20
15.6
96.2
.07
1N6144A
11.40
100
9.1
20
16.9
88.8
.07
1N6145A
12.35
100
9.9
20
18.2
82.4
.08
1N6146A
14.25
75
11.4
20
21.0
71.4
.08
1N6147A
15.20
75
12.2
20
22.3
67.3
.08
1N6148A
17.10
65
13.7
10
25.1
59.8
.085
1N6149A
19.0
65
15.2
5
27.7
54.2
.085
1N6150A
20.9
50
16.7
5
30.5
49.2
.085
1N6151A
22.8
50
18.2
5
33.3
45.0
.09
1N6152A
25.7
50
20.6
5
37.4
40.1
.09
1N6153A
28.5
40
22.8
5
41.6
36.0
.09
1N6154A
31.4
40
25.1
5
45.7
32.8
.095
1N6155A
34.2
30
27.4
5
49.9
30.1
.095
1N6156A
37.1
30
29.7
5
53.6
28.0
.095
1N6157A
40.9
30
32.7
5
59.1
25.4
.095
1N6158A
44.7
25
35.8
5
64.6
23.2
.095
1N6159A
48.5
25
38.8
5
70.1
21.4
.095
1N6160A
53.2
20
42.6
5
77.0
19.5
.095
1N6161A
58.9
20
47.1
5
85.3
17.6
.100
1N6162A
64.6
20
51.7
5
97.1
15.4
.100
1N6163A
71.3
20
56.0
5
103.1
14.5
.100
1N6164A
77.9
15
62.2
5
112.8
13.3
.100
1N6165A
86.5
15
69.2
5
125.1
12.0
.100
1N6166A
95.0
12
76.0
5
137.6
10.9
.100
1N6167A
104.5
12
86.6
5
151.3
9.9
.100
1N6168A
114.0
10
91.2
5
165.1
9.1
.100
1N6169A
123.5
10
98.8
5
178.8
8.4
.105
1N6170A
142.5
8
114.0
5
206.3
7.3
.105
1N6171A
152.0
8
121.6
5
218.4
6.9
.105
1N6172A
171.0
5
136.8
5
245.7
6.1
.110
1N6173A
190.0
5
152.0
5
273.0
5.5
.110
Notes: 1. Part number without the A suffi x has 5% higher VC, 5% lower minimum V(BR) , and 5% lower IPP.
T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 4 of 7
1N6138A – 1N6173A
GRAPHS
Pulse Time (tp)
FIGURE 1
P eak P ulse Power vs. Pul se Time
Jun ction Temper ature (TJ) in °C
FIGURE 2
P eak P ulse Power vs TJ (prior to impu l se)
Peak Pulse Power (PPP)
Max Peak Pulse Power (P
PP
) or curre nt (I
PP
)
in per c e nt of Max Ratings
T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 5 of 7
1N6138A – 1N6173A
GRAPHS
Tim e (t) in millis econ ds
FIGURE 3
Pulse Wave Form
TA (°C) (Ambient)
FIGURE 4
Temperature-Power Der ating Curve
Pulse C urrent (I
PP)
in Percent of I
PP
DC Operation (W) Maximum Rating
T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 6 of 7
1N6138A – 1N6173A
GRAPHS
A m bient Temp er atu r e ( TA) in ° C
FIGURE 5
Steady-S tat e D er ating Curve for F ree-Air Mounting (RθJA = 50 ºC/W)
Maximum Steady-State Power in Watts
T4-LDS-0278, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 7 of 7
1N6138A – 1N6173A
PACKAGE DIM ENSIONS
Ltr
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
BD
0.135
0.185
3.43
4.70
3
BL
0.140
0.195
3.56
4.95
LD
0.036
0.042
0.91
1.07
LL
1.00
1.30
25.4
33.02
L1
-
0.030
-
0.76
4
Schematic Symbol
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dim ensi on L 1 lea d di am eter unco nt rolle d i n this ar ea.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
