SIEMENS CFY66 HiRel K-Band GaAs Super Low Noise HEMT HiFfel Discrete and Microwave Semiconductor 4A 3 Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67) For professional super low-noise amplifiers ] ? For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain $a Space Qualified ESA/SCC Detail Spec. No.: 5613/002, Type Variant No.s 01 to 04 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking | Ordering Code | Pin Configuration Package 1 2 3 4 CFY66-08 (ql) - see below G/]s D | S$ | Micro-x CFY66-08P (ql) CFY66-10 (ql) CFY66-10P (ql) CFY66-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Gode: on request H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: on request (see order instructions for ordering example) Semiconductor Group 1 of 7 Draft D, Jul. 98SIEMENS CFY66 Maximum Ratings Parameter Symbol | Values Unit Drain-source voltage Vos 3.5 Vv Drain-gate voltage Voc 4.5 Vv Gate-source voltage (reverse /forward) | V.. -3...4+0.5 Vv Drain current I, 60 mA Gate forward current I, 2 mA RF Input Power, C- and X-Band P.., +10 dBm Junction temperature T, 150 C Storage temperature range Tag - 65... + 150 C Total power dissipation P.., 200 mW Soldering temperature * T.., 230 C Thermal Resistance Junction-soldering point Ris < 515 (tbe.) KAW Notes.: 1) For V,, <2 V. For V,, > 2 V, derating is required. DS 2) AtT, = + 47 C. For 1, >+ 47 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 7 Draft D, Jul. 98SIEMENS CFY66 Electrical Characteristics (at T,=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current bes 10 30 60 mA Vis =2V.V,,=0V Gate threshold voltage Voth 0.2 0.7 2.0 Vv Vis=2V, =1 mA Drain current at pinch-off op - < 50 - LA Vig = 1 5V,V,,=-3V Gate leakage current at pinch-off le, - < 50 200 LA Vig=l5V,V,,=-3V Transconductance Dato 40 55 - ms Vie =2V,1,= 10 mA Gate leakage current at operation -lote - <05 |2 LA Vis =2V.1,= 10 mA Thermal resistance Rivus - 450 - K/W junction to soldering point Semiconductor Group 3 of 7 Draft D, Jul. 98SIEMENS CFY66 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Noise figure NF dB Vig = 2 V, 1, = 10 mA, f = 12 GHz CFY66-08, -O8P 0.7 0.8 CFY66-10, 10P 0.9 1.0 Associated gain. G, dB Vig =2V,1,= 10 mA, f = 12 GHz CFY66-08, -O8P 10.0 11.0 CFY66-10, 10P 9.5 10.5 Output power at 1 dB gain compression | P,, dBm Vig =2 V,1,=20 mA, f = 12 GHz CFY66-06, -08, -10 11.0 CFY66-08P, -10P 10.0 [11.0 Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Qutput power characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Semiconductor Group 4of7 Draft D, Jul. 98SIEMENS CFY66 Typical Common Source S-Parameters f [Sii| <Sii |S21| <S821 |812| <S1i2 |822| <S22 k-Fact. S,,/S,, MAG [GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB] 10 0990 -21 4,451 161 0,0260 70 0,649 -16 0,14 223 2,0 0,960 -39 4,282 144 0,0460 61 0,623 -29 0,19 19,7 3,0 0,920 -57 4,148 126 0,0650 49 0,589 -43 0,27 18,0 40 0,880 -77 3,979 108 0,0830 37 0,560 = -57 0,32 16,8 5,0 0,830 -95 3,727 93 0,0940 25 0,532 -70 0,39 16,0 6,0 0,790 -111 3,444 78 0,1000 14 O,506 -83 0,47 15,4 7,0 0,749 -124 3,206 64 00,1060 6 0,490 -94 055 14,8 8,0 0,720 -137 3,029 50 0,1110 -3 0463 -103 0,63 14,4 90 0,690 -150 2,907 38 0,1130 -11 0,440 -113 0,70 14,1 10.0 0,670 -165 2,845 25 0,1190 -20 0,420 -121 0,74 13,8 11,0 0649 179 2,787 11 O,1210 -28 0,400 -130 0,79 13,6 12,0 0,628 164 2699 -3 0,1200 -37 0,385 -143 0,84 13,5 13,0 0,610 151 2,614 -16 0,1200 -46 0,370 -153 0,91 13,4 14,0 0,597 138 2,584 -28 0,1190 -55 0,355 -162 0,96 13,4 15,0 0,584 121 2,550 -42 0,1180 -66 0,340 -172 1,01 133 12,8 16,0 0,580 104 2,484 -56 0,1170 -76 0,330 178 1,05 133 11,9 17,0 0580 89 2461 -71 O,1150 -87 0,325 169 1,08 13,3 411,5 18,0 0,580 74 2,456 -86 0,1160 -100 0,320 160 1,09 133 11,4 Typical Common Source Noise-Parameters t NF iin IPS oc| <I... R,, [GHz] [dB] [magn] [angle] [2] 1 0,27 0,770 16 17,85 2 0,31 0,720 30 16,55 3 0,35 0,672 43 15,27 4 0,38 0,634 57 13,75 5 0,42 0,604 71 11,99 6 0,46 0,578 85 10,04 7 0,50 0,558 100 8,15 8 0,55 0,541 114 6,30 9 0,60 0,528 128 4,74 10 0,65 0,517 143 3,45 11 0,70 0,506 157 2,58 12 0,74 0,496 171 2,16 13 0,79 0,485 -175 2,27 14 0,85 0,472 -160 2,88 15 0,89 0,457 -146 3,99 16 0,95 0,437 -132 5,59 17 1,00 0,415 -118 7,63 18 1,06 0,389 -102 9,96 Semiconductor Group 5of7 Draft D, Jul. 98SIEMENS CFY66 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRe/ Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Example: Ordering Code: @.......... CFY66_ -(nnl) (ql) -(nnl) Noise Figure/Gain and/or Power Level (ql): Quality Level Ordering Code: (on request) CFY66-08P ES For GCFY66, Noise Figure/Gain/Power Level 08P: NF < 0.8 dB, G, > 10.0 dB, P,,, > 10 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www .siemens.de/semiconductor/products/35/353 .htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group +4+89 6362 4480 +489 6362 5568 martin. wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 6 of 7 Draft D, Jul. 98SIEMENS CFY66 Micro-X Package _ 41,0240, $ ae KY 1 DN fr s FO {JF a! -4 b Nate Bow : | o T $ 1,78 39 * biz og = - Q al -_ o af. O1,6520,1 Semiconductor Group Published by Siemens Semiconductors, High Frequency Products Marketing, P.G.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and Q89000 manufacturer (this includes ISO 9000). fof? Draft D, Jul. 98