Features
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High sensitivity: 0.28 A/W Typ. (λ=405 nm)
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High-speed response: 50 MHz Typ. (VR=10 V)
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Active area: 5.0 × 5.0 mm
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TO-8 metal package
Applications
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Violet-laser detection and monitor
PHOTODIODE
Si PIN photodiode
Si PIN photodiode for violet-laser detection
S9195
S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed
response is achieved despite the large active area.
1
■ Absolute maximum ratings
Parameter Symbol Value Unit
Reverse voltage VR Max. 20 V
Operating temperature Topr -40 to +100 °C
Storage temperature Tstg -55 to +125 °C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ- 320 to 1000 - nm
Peak sensitivity wavelength λp-840 -nm
Photo sensitivity S λ=405 nm 0.25 0.28 - A/W
Dark current IDVR=10 V -0.5 5nA
Terminal capacitance Ct VR=10 V, f=1 MHz - 60 80 pF
Cut-off frequency fc VR=10 V, RL=50 Ω
λ=405 nm, -3 dB 30 50 -MHz
Noise equivalent power NEP VR=10 V, λ=λp 2.5 × 10-14 -W/Hz
1/2
Si PIN photodiode
S9195
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed f or possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
Cat. No. KPIN1068E01
Jan. 2004 DN
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
200 400 600 800
WAVELENGTH (nm)
1000
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 ˚C)
QE=100 %
10 pA
100 pA
1 nA
10 nA
1 pA
0.01 0.1 1 10
REVERSE VOLTAGE (V)
100
DARK CURRENT
(Typ. Ta=25 ˚C)
10 pF
100 pF
1 nF
1 pF
0.1 1 10
REVERSE VOLTAGE (V)
100
TERMINAL CAPACITANCE
(Typ. Ta=25 ˚C)
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT (%/˚C)
-0.5
200 400 600
(Typ.)
800 1000
0
+0.5
+1.0
+1.5
COMMON TO CASE
1.9
(15)
5.0 ± 0.2
ANODE TERMINAL MARK
1.4
PHOTOSENSITIVE
SURFACE
13.9 ± 0.2
12.35 ± 0.1
10.5 ± 0.1
0.45
LEAD
7.5 ± 0.2
The borosilicate glass window may extend
a maximum of 0.1 mm beyond the upper
surface of the cap.
2
■ Dimensional outline (unit: mm)
■ Spectral response
■ Dark current vs. reverse voltage KPINB0289EA
KPINB0291EA
KPINA0094EA
■ Terminal capacitance vs. re v erse voltage
KPINB0292EA
KPINB0290EA
■ Photo sensitivity temperature characteristic
