VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 Doc. No. 5SYA1532-02 June 04 * Low-loss, rugged IGBT SPT chip-set * EMC friendly switching characteristics * Low profile compact baseless package for good power cycling * Suitable for snap-on gate-driver connection * Integrated PTC substrate temperature sensor Maximum rated values 1) Parameter Symbol Conditions Collector-emitter voltage Unit VGE = 0 V, Tvj 25 C 1700 V IC Th = 60 C 150 A Peak collector current ICM tp = 1 ms, Th = 60 C 300 A 20 V 510 W 150 A 300 A 1100 A 10 s 4000 V 150 C Total power dissipation VGES Ptot DC forward current IF Peak forward current IFM Surge current IFSM -20 Th = 25 C, per switch (IGBT) VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1300 V, VCEM CHIP 1700 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Case operating temperature Storage temperature Mounting torques 2) max DC collector current Gate-emitter voltage 1) VCES min 2) Tc(op) -40 125 C Tstg -40 125 C M1 Base-heatsink, M5 screws 2 3 M2 Main terminals, M6 screws 4 6 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2017 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNS 0150V170100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1700 Collector-emitter 4) saturation voltage VCE sat VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 150 A, VGE = 15 V 2.3 Tvj = 125 C 2.6 Tvj = 25 C ICES VCE = 1700 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance plus to minus L DC Resistance, terminal-chip RCC'+EE' 3) 4) IC = 150 A, VCE = 900 V, VGE = -15 V .. 15 V 2.7 Unit V V 1 Tvj = 125 C IC = 6 mA, VCE = VGE, Tvj = 25 C max V Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage typ mA 1.5 mA -500 500 nA 4.5 6.5 V 1260 nC 13.8 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 0.96 nF 0.58 VCC = 900 V, IC = 150 A, RG = 8.2 , VGE = 15 V, L = 55 nH, inductive load Tvj = 25 C 130 Tvj = 125 C 140 Tvj = 25 C 100 Tvj = 125 C 110 VCC = 900 V, IC = 150 A, RG = 8.2 , VGE = 15 V, L = 55 nH, inductive load Tvj = 25 C 515 Tvj = 125 C 600 Tvj = 25 C 90 Tvj = 125 C 110 VCC = 900 V, IC = 150 A, VGE = 15 V, RG = 8.2 , L = 55 nH, inductive load Tvj = 25 C 36 Tvj = 125 C 49 VCC = 900 V, IC = 150 A, VGE = 15 V, RG = 8.2 , L = 55 nH, inductive load Tvj = 25 C 24 Tvj = 125 C 38 tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 1300 V, VCEM CHIP 1700 V ns ns ns ns mJ mJ 700 A 20 nH Th = 25 C 1.3 Th = 125 C 1.8 m Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1532-02 June 04 page 2 of 9 5SNS 0150V170100 Diode characteristic values Parameter 5) Symbol Conditions Forward voltage VF 6) Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) IF = 150 A VCC = 900 V, IF = 150 A, VGE = 15 V, RG = 8.2 L = 55 nH inductive load Erec min typ max Tvj = 25 C 2.0 2.3 Tvj = 125 C 2.05 Tvj = 25 C 125 Tvj = 125 C 141 Tvj = 25 C 20 Tvj = 125 C 41 Tvj = 25 C 350 Tvj = 125 C 600 Tvj = 25 C 10 Tvj = 125 C 22 Unit V A C ns mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties Parameter Symbol Conditions IGBT thermal resistance junction to heatsink 2) Diode thermal resistance 2) junction to heatsink Temperature sensor Rth(j-h)IGBT Rth(j-h)DIODE PTC min typ max Heatsink: flatness < 50 m, roughness < 6 m without ridge Thermal grease: conductivity 0.8 W/mK, thickness 30 m < t < 50 m RT = RT0 exp [B (1/T - 1/T0)] RT0 = 1k (3%), B = -760 K (2%), T0 = 298 K Unit 0.245 K/W 0.45 K/W max Unit 123 106.5 34.5 mm Mechanical properties Parameter Symbol Conditions Dimensions x L W x H Typical , see outline drawing min typ x x Clearance distance DC according to IEC 60664-1 Term. to base: 13.5 and EN 50124-1 Term. to term: 11 mm Surface creepage distance DSC according to IEC 60664-1 Term. to base: 14 and EN 50124-1 Term. to term: 11.5 mm Weight Mounting 2) 310 2) gr PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep Control terminal Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm For detailed mounting instructions refer to ABB Document No. 5SYA2017 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1532-02 June 04 page 3 of 9 5SNS 0150V170100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2017 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1532-02 June 04 page 4 of 9 5SNS 0150V170100 300 300 17V 17V 250 250 15V 15V 13V 11V 11V 9V IC [A] IC [A] 13V 200 200 150 9V 150 100 100 50 50 Tvj = 25 C Tvj = 125 C 0 0 0 1 2 3 4 5 6 0 1 2 VCE [V] Fig. 1 3 4 5 6 VCE [V] Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level 2.5 300 VCC 1300 V, Tvj = 125 C VGE = 15 V, RG = 8.2 ohm VCE = 20 V 250 2 200 IC pulse / IC IC [A] 1.5 150 1 100 125 C 0.5 50 25 C Chip Power terminals 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 VGE [V] Fig. 3 Typical transfer characteristics, chip level 500 1000 1500 2000 VCE [V] Fig. 4 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1532-02 June 04 page 5 of 9 5SNS 0150V170100 0.14 0.12 VCC = 900 V RG = 8.2 ohm VGE = 15 V Tvj = 125 C L = 55 nH 0.12 0.10 VCC = 900 V IC = 150 A VGE = 15 V Tvj = 125 C L = 55 nH 0.1 0.08 Eon, Eoff [J] Eon, E off [J] Eon 0.08 Eon 0.06 0.04 Eoff 0.04 0.06 Eoff 0.02 0.02 E sw [mJ] = 7.03 x 10 -4 x I C 2 + 0.401 x I C + 12.1 0 0.00 0 50 100 150 200 250 300 0 350 5 10 Typical switching energies per pulse vs collector current Fig. 6 1.00 25 30 35 Typical switching energies per pulse vs gate resistor 10.00 VCC = 900 V IC = 150 A VGE = 15 V Tvj = 125 C L = 55 nH td(on), t r, t d(off), t f [s] td(off) td(on), t r, t d(off), t f [s] 20 RG [ohm] IC [A] Fig. 5 15 td(on) 0.10 tf tr td(off) 1.00 td(on) tr 0.10 tf VCC = 900 V RG = 8.2 ohm VGE = 15 V Tvj = 125 C L = 55 nH 0.01 0.01 0 50 100 150 200 250 300 350 0 IC [A] Fig. 7 Typical switching times vs collector current 10 20 30 40 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1532-02 June 04 page 6 of 9 5SNS 0150V170100 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 900 V Cies 15 10 VGE [V] C [nF] VCC = 1300 V Coes 10 1 Cres 5 IC = 150 A Tvj = 25 C 0 0.1 0 5 Fig. 9 10 15 20 VCE [V] 25 30 0.0 35 Typical capacitances vs collector-emitter voltage Fig. 10 200 0.2 0.4 0.6 Qg [C] 0.8 1.0 1.2 Typical gate charge characteristics 2000 VGE 15 V Tvj = 150 C 1800 1600 150 RT [ohm] IC, IF [A] 1400 100 1200 1000 800 600 50 400 IGBT Diode RT = RT 0e B(1 T -1 T0 ) 200 RT 0 = 1k ( 3 %), B = -760 K ( 2%), T0 = 298 K 0 0 0 20 40 60 80 100 120 140 0 160 Rated current vs temperature 40 60 80 100 120 140 T [C] Th [C] Fig. 11 20 Fig. 12 PTC temperature sensor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1532-02 June 04 page 7 of 9 5SNS 0150V170100 40 300 160 Irr 35 140 250 30 25C 120 125C 100 20 80 Qrr 15 60 IF [A] 25 Irr [A], Qrr [C] Erec [mJ] 200 150 100 Erec VCC = 900 V RG = 8.2 ohm Tvj = 125 C L = 55 nH 10 5 40 50 20 E rec [mJ] = -1.38 x 10 -4 x I F 2 + 0.134 x I F + 4.19 0 0 0 50 100 150 200 250 300 0 350 0.0 IF [A] Fig. 13 2.0 3.0 VF [V] Typical reverse recovery characteristics vs forward current 30 Fig. 14 Typical diode forward characteristics, chip level 300 VCC = 900 V IF = 150 A Tvj = 125 C L = 55 nH 250 20 200 15 150 10 100 Irr [A], Qrr [C] Erec 25 Erec [mJ] 1.0 Irr 5 50 Qrr 0 0 0 10 20 30 40 RG [ohm] Fig. 15 Typical reverse recovery characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1532-02 June 04 page 8 of 9 5SNS 0150V170100 1 Analytical function for transient thermal impedance: Zth(j-h) Diode n Z th (j-h) (t) = R i (1 - e - t/ i ) Zth(j-h) IGBT i =1 i 1 2 3 4 IGBT 0.01 Ri(K/kW) 223 15.0 1.74 5.27 i(ms) 241 17.5 2.36 0.52 DIODE Zth(j-h) [K/W] IGBT, DIODE 0.1 Ri(K/kW) 406 29.6 1.08 14.0 i(ms) 239 18.9 1.30 1.30 5 0.001 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Typical thermal impedance vs time This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1532-02 June 04