ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1700
V
IC = 150
A
Doc. No. 5SYA1532
-
02 June 04
• Low-loss, rugged IGBT SPT chip-set
• EMC friendly switching
characteristics
• Low profile compact baseless
package for good power cycling
• Suitable for snap-on gate-driver
connection
• Integrated PTC substrate
temperature sensor
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1700
V
DC collector current IC Th = 60 °C 150 A
Peak collector current ICM tp = 1 ms, Th = 60 °C 300 A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Th = 25 °C, per switch (IGBT) 510 W
DC forward current IF 150 A
Peak forward current IFM 300 A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 1100
A
IGBT short circuit SOA tpsc VCC = 1300 V, VCEM CHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 4000
V
Junction temperature Tvj 150 °C
Case operating temperature Tc(op) -40 125 °C
Storage temperature Tstg -40 125 °C
M1 Base-heatsink, M5 screws 2 3
Mounting torques 2) M2 Main terminals, M6 screws 4 6 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2017
IGBT Module LoPak4 SPT
5SNS 0150V170100
5SNS 0150V170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1532-02 June 04 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 1700
V
Tvj = 25 °C 2.3 2.7 V
Collector-emitter 4)
saturation voltage VCE sat IC = 150 A, VGE = 15 V Tvj = 125 °C 2.6 V
Tvj = 25 °C 1 mA
Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 1.5 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 6 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 150 A, VCE = 900 V,
VGE = -15 V .. 15 V 1260
nC
Input capacitance Cies 13.8
Output capacitance Coes 0.96
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.58 nF
Tvj = 25 °C 130
Turn-on delay time td(on) Tvj = 125 °C 140 ns
Tvj = 25 °C 100
Rise time tr
VCC = 900 V,
IC = 150 A,
RG = 8.2 Ω,
VGE = ±15 V,
Lσ = 55 nH, inductive load
Tvj = 125 °C 110 ns
Tvj = 25 °C 515
Turn-off delay time td(off) Tvj = 125 °C 600 ns
Tvj = 25 °C 90
Fall time tf
VCC = 900 V,
IC = 150 A,
RG = 8.2 Ω,
VGE = ±15 V,
Lσ = 55 nH, inductive load
Tvj = 125 °C 110 ns
Tvj = 25 °C 36
Turn-on switching energy Eon VCC = 900 V, IC = 150 A,
VGE = ±15 V, RG = 8.2 Ω,
Lσ = 55 nH, inductive load
Tvj = 125 °C 49 mJ
Tvj = 25 °C 24
Turn-off switching energy Eoff VCC = 900 V, IC = 150 A,
VGE = ±15 V, RG = 8.2 Ω,
Lσ = 55 nH, inductive load
Tvj = 125 °C 38 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1300 V, VCEM CHIP ≤ 1700 V 700 A
Module stray inductance
plus to minus Lσ DC 20 nH
Th = 25 °C 1.3
Resistance, terminal-chip RCC’+EE’ T
h
= 125 °C 1.8 mΩ
3) Characteristic values according to IEC 60747 - 9
4) Collector-emitter saturation voltage is given at chip level
5SNS 0150V170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1532-02 June 04 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 2.0 2.3
Forward voltage 6) VF IF = 150 A Tvj = 125 °C 2.05 V
Tvj = 25 °C 125
Reverse recovery current Irr Tvj = 125 °C 141 A
Tvj = 25 °C 20
Recovered charge Qrr Tvj = 125 °C 41 µC
Tvj = 25 °C 350
Reverse recovery time trr Tvj = 125 °C 600 ns
Tvj = 25 °C 10
Reverse recovery energy Erec
VCC = 900 V,
IF = 150 A,
VGE = ±15 V,
RG = 8.2 Ω
Lσ = 55 nH
inductive load
Tvj = 125 °C 22 mJ
5) Characteristic values according to IEC 60747 - 2
6) Forward voltage is given at chip level
Thermal properties
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance 2)
junction to heatsink Rth(j-h)IGBT 0.245
K/W
Diode thermal resistance 2)
junction to heatsink Rth(j-h)DIODE
Heatsink: flatness < ±50 µm,
roughness < 6 µm without ridge
Thermal grease: conductivity ≥ 0.8 W/mK,
thickness 30 µm < t < 50 µm 0.45 K/W
Temperature sensor PTC RT = RT0 exp [B (1/T - 1/T0)]
RT0 = 1kΩ (±3%), B = -760 K (±2%), T0 = 298 K
Mechanical properties
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 123 x 106.5 x 34.5 mm
Term. to base:
13.5
Clearance distance DC according to IEC 60664-1
and EN 50124-1 Term. to term:
11 mm
Term. to base:
14
Surface creepage distance DSC according to IEC 60664-1
and EN 50124-1 Term. to term:
11.5 mm
Weight 310 gr
PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep
Mounting 2) Control terminal Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2017
5SNS 0150V170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1532-02 June 04 page 4 of 9
Electrical configuration
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2017
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
5SNS 0150V170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1532-02 June 04 page 5 of 9
0
50
100
150
200
250
300
0 1 2 3 4 5 6
VCE [V]
IC [A]
Tvj = 25 °C
9V
11V
13V
15V
17V
0
50
100
150
200
250
300
0 1 2 3 4 5 6
VCE [V]
IC [A]
Tvj = 125 °C
9V
11V
13V
15V
17V
Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level
0
50
100
150
200
250
300
0 1 2 3 4 5 6 7 8 9 1011 12
VGE [V]
IC [A]
125 °C
25 °C
V
CE = 20 V
0
0.5
1
1.5
2
2.5
0500 1000 1500 2000
VCE [V]
IC pulse / IC
Chip
Power terminals
V
CC ≤ 1300 V, Tvj = 125 °C
V
GE = ±15 V, RG = 8.2 ohm
Fig. 3 Typical transfer characteristics, chip level Fig. 4 Turn-off safe operating area (RBSOA)
5SNS 0150V170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1532-02 June 04 page 6 of 9
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0 50 100 150 200 250 300 350
IC [A]
Eon, Eoff [J]
V
CC = 900 V
RG = 8.2 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
Eon
Eoff
Esw[mJ] = 7.03 x 10-4 x IC2 + 0.401 x IC + 12.1
0
0.02
0.04
0.06
0.08
0.1
0.12
0 5 10 15 20 25 30 35
RG [ohm]
Eon, Eoff [J]
V
CC = 900 V
IC = 150 A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
Eon
Eoff
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.10
1.00
0 50 100 150 200 250 300 350
IC [A]
td(on), tr, td(off), tf [µs]
td(off)
td(on)
tr
tf
V
CC = 900 V
RG = 8.2 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
0.01
0.10
1.00
10.00
010 20 30 40
RG [ohm]
td(on), tr, td(off), tf [µs]
td(on)
td(off)
tr
tf
V
CC = 900 V
IC = 150 A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNS 0150V170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1532-02 June 04 page 7 of 9
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
0
5
10
15
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Qg [µC]
VGE [V]
V
CC
= 900 V
IC = 150 A
Tvj = 25 °C
V
CC
= 1300 V
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
50
100
150
200
0 20 40 60 80 100 120 140 160
Th [°C]
IC, IF [A]
IGBT
Diode
V
GE ≥ 15 V
Tvj = 150 °C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 20 40 60 80 100 120 140
T [°C]
RT [ohm]
)11(
00
TTB
TT eRR −
=
298%),2(760%),3(1 00
K
T
K
B
k
R
T=±−=±Ω=
Fig. 11 Rated current vs temperature Fig. 12 PTC temperature sensor
5SNS 0150V170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1532-02 June 04 page 8 of 9
0
5
10
15
20
25
30
35
40
0 50 100 150 200 250 300 350
IF [A]
Erec [mJ]
0
20
40
60
80
100
120
140
160
Irr [A], Qrr [µC]
V
CC = 900 V
RG = 8.2 ohm
Tvj = 125 °C
Lσ = 55 nH
Qrr
Irr
Erec
Erec [mJ] = -1.38 x 10-4 x IF2 + 0.134 x IF + 4.19
0
50
100
150
200
250
300
0.0 1.0 2.0 3.0
VF [V]
IF [A]
25°C
125°C
Fig. 13 Typical reverse recovery characteristics
vs forward current Fig. 14 Typical diode forward characteristics,
chip level
0
5
10
15
20
25
30
0 10 20 30 40
RG [ohm]
Erec [mJ]
0
50
100
150
200
250
300
Irr [ A], Qrr [µC]
V
CC = 900 V
IF = 150 A
Tvj = 125 °C
Lσ = 55 nH
Irr
E
rec
Qrr
Fig. 15 Typical reverse recovery characteristics
vs gate resistor
5SNS 0150V170100
This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1532-02 June 04
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ih)-(jth ∑
=
i
τ
i 1 2 3 4 5
Ri(K/kW)
223 15.0 1.74 5.27
IGBT
τi(ms) 241 17.5 2.36 0.52
Ri(K/kW)
406 29.6 1.08 14.0
DIODE
τi(ms) 239 18.9 1.30 1.30
0.0001
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
t [s]
Zth(j-h)
[K/W] IGBT, DIODE
Zth(j-h) IGBT
Zth(j-h) Diode
Fig. 16 Typical thermal impedance vs time
