MA4FCP300-W - M/A-COM Technology Solutions, Inc. - Datasheet.Live

1

Silicon Flip Chip

PIN Diode

Rev. V1

MA4FCP300

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

Features

• Lower Series Resistance : 2.6 Ω

• Lower Capacitance : 40 fF

• Faster Switching Speed : 40 nS

• Silicon Nitride Reliability Passivation

• Polyimide Scratch Protection

• Designed for Automated Pick and Place Insertion

• Rugged by Design

Description

M/A-COM’s MA4FCP Series consists of Silicon Flip

Chip PIN diodes fabricated with M/A-COM’s patented

HMIC process. This diode is fabricated on epitaxial

wafers using a process designed for repeatable electrical

characteristics and extremely low parasitics. This diode

is fully passivated with Silicon Nitride and has an

additional layer of Polyimide for scratch protection.

These protective coatings prevent damage to the junction

during automated or manual handling. This flip chip

configuration is suitable for pick and place insertion.

Applications

The small 0315 outline and low 0.12 pS RC product,

make the device useful for multi-throw switch and

switched phase shifter circuits requiring < 40 nS

switching speeds up to 18 GHz operating frequency.

Absolute Maximum Ratings @ 25 ˚C 1

Parameter Absolute Maximum

Forward Current 100 mA

Reverse Voltage - 100 V

Operating Temperature - 55 °C to + 125 °C

Storage Temperature - 55 °C to + 150 °C

Junction Temperature + 175 °C

Dissipated Power 150 mW

Mounting Temperature + 300 °C for 10 seconds

1. Exceeding these limits may cause permanent damage.

1269 Outline

B

C

DE D

Ca th od e Mark

Top View

Bottom View

Side View

F

A

Dim

.

inches (mm)

min. max. min. max.

A 0.0269 0.0289 0.683 0.733

B 0.0135 0.0155 0.343 0.393

C 0.0040 0.0080 0.102 0.203

D 0.0041 0.0061 0.105 0.155

E 0.0124 0.0144 0.315 0.365

F 0.0069 0.0089 0.175 0.225

2

Silicon Flip Chip

PIN Diode

Rev. V1

MA4FCP300

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

Electrical Specifications @ TA = +25°C

Parameters @ Conditions Symbol Units Min. Typ. Max.

Total Capacitance @ -10V, 1MHz1 C

T pF 0.04

0.08

Total Capacitance @ -10V, 1GHz1,3 C

T pF 0.025

Series Resistance @ +50mA2,3, 100MHz RS Ω 2.1 2.8

Series Resistance @ +50mA2,3, 1GHz RS Ω 2.6

Forward Voltage @ +100mA VF V 1.1 1.5

Reverse Voltage @ -10μA VR V | -70 | | -100 |

Reverse Current @ -40V IR μA | - 10 |

50 – 90 % Lifetime @ + 10mA / - 6mA TL ns 140

Steady State Thermal Resistance4 θ ° C/W 450

1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance, Cp.

2. Series resistance RS is equivalent to the total diode series resistance including the junction resistance Rj.

3. Rs and Cp measured on an HP4291A with die mounted in an ODS-186 package.

4. Steady-State Thermal Resistance measured with die mounted in an ODS-186 package.

—————————————————————————————————————————————————————————

Assembly Procedures

The following precautions should be observed to avoid

damaging these devices.

Cleanliness

These devices should be handled in a clean environment. Do

not attempt to clean die after installation.

ESD

These devices very susceptible to ESD and are rated Class 0

(0-199V) per HBM MIL-STD-883, method 3015.7 [C =

100pF ±10%, R = 1.5kΩ ±1%]. Even though tested die pass

100V ESD, they must be handled in a static-free

environment.

General Handling

The protective polymer coating on the active areas of these

devices provides scratch protection, particularly for the metal

airbridge that contacts the anode. Die can be handled with

tweezers or vacuum pickups and are suitable for use with

automatic pick-and-place equipment.

Mounting Techniques

These devices were designed for insertion onto hard or

soft substrates with the junction side down. They can be

mounted with electrically conductive epoxy or with a

low temperature solder preform. The die can also be

assembled with the junction side up, and wire or ribbon

bonds made to the pads.

Solder Die Attach using Electrically

Conductive Ag Epoxy and Solder

These chips are designed to be inserted onto hard or soft

substrates with the junction side down. They should be

mounted onto silkscreened circuits using Electrically

Conductive Ag Epoxy, approximately 1-2 mils in

thickness and cured at approximately 90°C to 150 °C per

manufacturer’s schedule. For extended cure times > 30

minutes, temperatures must be below 200 °C.

Sn Rich Solders ( > 30 % by Weight ) are not

recommended due to the Tungsten Metallization scheme

beneath the gold contacts. Indalloy or 80 Au/20 Sn

Solders are acceptable. Maximum soldering temperature

must be < 300 °C for < 10 seconds.

3

Silicon Flip Chip

PIN Diode

Rev. V1

MA4FCP300

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

Circuit Mounting Dimensions ( Inches )

Ordering Information

Part Number Packaging

MA4FCP300 Die in Carrier

MA4FCP300-T Tape/Reel

MA4FCP300-W Wafer on Fram e

0.012

(2) PL

0.008

(2) PL

0.013

4

Silicon Flip Chip

PIN Diode

Rev. V1

MA4FCP300

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

Frequency (GHz)

Ct (F)

Ct @ - 10V

Capacitan ce vs Frequen cy

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

4.00

4.50

5.00

0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

Frequency (GHz)

Rs ( Ohms )

Rs @ 50 mA

Rs vs Frequency

5

Silicon Flip Chip

PIN Diode

Rev. V1

MA4FCP300

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

Ls = 0.6 nH

_ +

Rs

Ct

Diode Model

MA4FCP300 SPICE Model

PinDiodeModel

NLPINM1

AllParams=

Ffe= 1.0

Af=1.0

Kf=0.0

Imax= 1.0 E+5 A/m^2

Fc= 0.5

M= 0.5

Vj= 0.7 V

Cj0= 0.07 pF

Rs(I)= Rc + Rj(I) = 0.05 Ohm + Rj(I)

Tau= 0.14 usec

Cjmin= 0.04 pF

Rr= 20 K Ohms

Wi= 7.5 um

Un= 900 cm^2/V-sec

Vi=0.0 V

Is=1.0E-14 A

wPmax= 125 mW

wBv= 100 V