R08DS0111EJ0200 Rev.2.00 Page 1 of 18
Jun 21, 2013
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Preliminary Data Sheet
PS9331L, PS9331L2
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
DESCRIPTION
The PS9331L and PS9331L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and power MOSFETs on the output side on one chip.
The PS9331L and PS9331L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9331L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9331L and PS9331L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9331L is lead bending type (Gull-wing) for surface mounting.
The PS9331L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
• Long creepage distance (8 mm MIN.: PS9331L2)
• Half size of 8-pin DIP
• Peak output current (2.5 A MAX., 2.0 A MIN.)
• High speed switching (tPLH, tPHL = 175 ns MAX.)
• High common mode transient immunity (CMH, CML = ±50 kV/
μ
s MIN.)
• Operating Ambient Temperature (125 °C)
• Embossed tape product : PS9331L-E3, PS9331L2-E3: 2 000 pcs/reel
• Pb-Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved (EN 60065, EN 60950)
• DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
APPLICATIONS
• IGBT, Power MOS FET Gate Driver
• Industrial inverter
• AC Servo
1. Anode
2. NC
3. Cathode
4. VEE
5. VO
6. VCC
64
132
5
PIN CONNECTION
(Top View)
SHIELD
R08DS0111EJ0200
Rev.2.00
Jun 21, 2013
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 2 of 18
Jun 21, 2013
PACKAGE DIMENSIONS (UNIT: mm)
Lead Bending Type (Gull-wing) For Surface Mount
0.25±0.15
9.7±0.3
3.7±0.25
0.8±0.25
0.2±0.15
7.62
3.5±0.2
6.8±0.25
4.58±0.3
(0.82)
PS9331L
0.4±0.1
0.25 M
1.27
Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount)
0.2±0.15
PS9331L2
11.5±0.3
6.8±0.25
4.58±0.3
0.25±0.15
0.75±0.25
(0.82)
3.7±0.25
3.5±0.2
7.62
0.4±0.1
0.25 M
1.27
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 3 of 18
Jun 21, 2013
PHOTOCOUPLER CONSTRUCTION
Parameter PS9331L PS9331L2
Air Distance (MIN.) 7 mm 8 mm
Outer Creepage Distance (MIN.) 7 mm 8 mm
Isolation Distance (MIN.) 0.4 mm 0.4 mm
MARKING EXAMPLE
Rank Code
Year Assembled
(Last 1 Digit)
Week Assembled
N320
R
9331
N320
No. 1 pin Mark
Assembly Lot
Type Number
Company Initial
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification
Packing Style Safety Standard
Approval
Application
Part Number*1
PS9331L PS9331L-AX Pb-Free 20 pcs (Tape 20 pcs cut) Standard PS9331L
PS9331L-E3 PS9331L-E3-AX (Ni/Pd/Au) Embossed Tape 2 000 products
pcs/reel (UL, CSA,
PS9331L2 PS9331L2-AX 20 pcs (Tape 20 pcs cut) SEMKO PS9331L2
PS9331L2-E3 PS9331L2-E3-AX Embossed Tape 2 000 approved)
pcs/reel
PS9331L-V PS9331L-V-AX 20 pcs (Tape 20 pcs cut) DIN EN 60747-5-5 PS9331L
PS9331L-V-E3 PS9331L-V-E3-AX Embossed Tape 2 000 (VDE 0884-5)
pcs/reel approved
PS9331L2-V PS9331L2-V-AX 20 pcs (Tape 20 pcs cut) (Option) PS9331L2
PS9331L2-V-E3 PS9331L2-V-E3-AX Embossed Tape 2 000
pcs/reel
Note: *1. For the application of the Safety Standard, following part number should be used.
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 4 of 18
Jun 21, 2013
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current IF 25 mA
Peak Transient Forward Current
(Pulse Width < 1
μ
s)
IF (TRAN) 1.0 A
Reverse Voltage VR 5 V
Power Dissipation *1 P
D 45 mW
Detector High Level Peak Output Current *2 I
OH (PEAK) 2.5 A
Low Level Peak Output Current *2 I
OL (PEAK) 2.5 A
Supply Voltage (VCC − VEE) 0 to 35 V
Output Voltage VO 0 to VCC V
Power Dissipation *3 P
C 250 mW
Isolation Voltage *4 BV 5 000 Vr.m.s.
Operating Frequency f 50 kHz
Operating Ambient Temperature TA −40 to +125 °C
Storage Temperature Tstg −55 to +150 °C
Notes: *1. Reduced to 1.2 mW/°C at TA = 110°C or more.
*2. Maximum pulse width = 10
μ
s, Maximum duty cycle = 0.2%
*3. Reduced to 3.9 mW/°C at TA = 85°C or more.
*4. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-3 shorted together, 4-6 shorted together.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage (VCC − VEE) 15 30 V
Forward Current (ON) IF (ON) 8 10 12 mA
Forward Voltage (OFF) VF (OFF) −2 0.8 V
Operating Ambient Temperature TA −40 125 °C
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 5 of 18
Jun 21, 2013
ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit
Diode Forward Voltage VF I
F = 10 mA, TA = 25°C 1.35 1.56 1.75 V
Reverse Current IR V
R = 3 V, TA = 25°C 10
μ
A
Input Capacitance CIN f = 1 MHz, VF = 0 V 30 pF
Detector High Level Output Current IOH V
O = (VCC − 4 V) *2 0.5 2.2 A
V
O = (VCC − 15 V) *3 2.0
Low Level Output Current IOL V
O = (VEE + 2.5 V) *2 0.5 2.4 A
V
O = (VEE + 15 V) *3 2.0
High Level Output Voltage VOH I
O = −100 mA *4 V
CC − 3.0 VCC − 1.3 V
Low Level Output Voltage VOL I
O = 100 mA 0.2 0.5 V
High Level Supply Current ICCH V
O = Open 1.7 2.2 mA
Low Level Supply Current ICCL V
O = Open 1.7 2.2 mA
V
UVLO+ 10.8 12.3 13.4
UVLO Threshold
VUVLO−
VO > 5 V, IF = 10 mA
9.5 11.0 12.5
V
UVLO Hysteresis UVLOHYS VO > 5 V, IF = 10 mA 0.4 1.3 V
Coupled Threshold Input Current
(L → H)
IFLH I
O = 0 mA, VO > 5 V 1.7 4.0 mA
Threshold Input Voltage
(H → L)
VFHL I
O = 0 mA, VO < 5 V 0.8 V
Notes: *1. Typical values at TA = 25°C, VCC − VEE = 30 V.
*2. Maximum pulse width = 50
μ
s, Maximum duty cycle = 0.5%.
*3. Maximum pulse width = 10
μ
s, Maximum duty cycle = 0.2%.
*4. VOH is measured with the DC load current in this testing (Maximum pulse width = 2 ms, Maximum duty cycle
= 20%).
SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit
Propagation Delay Time (L → H) tPLH R
g = 10 Ω, Cg = 10 nF, 80 175 ns
Propagation Delay Time (H → L) tPHL f = 10 kHz, 105 175 ns
Pulse Width Distortion (PWD) |tPHL−tPLH| Duty Cycle = 50%, 25 75 ns
Propagation Delay Time
(Difference Between Any Two
Products)
tPHL−tPLH I
F = 10 mA −90 90 ns
Rise Time tr 40 ns
Fall Time tf 40 ns
Common Mode Transient
Immunity at High Level Output
|CMH| TA = 25°C, IF = 10 mA,
VCC = 30 V, VCM = 1.5 kV
50 kV/
μ
s
Common Mode Transient
Immunity at Low Level Output
|CML| TA = 25°C, IF = 0 mA,
VCC = 30 V, VCM = 1.5 kV
50 kV/
μ
s
Notes: *1. Typical values at TA = 25°C, VCC−VEE = 30 V.
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 6 of 18
Jun 21, 2013
TEST CIRCUIT
Fig. 1 I
OH
Test Circuit Fig. 2 I
OL
Test Circuit
Fig. 3 V
OH
Test Circuit Fig. 4 V
OL
Test Circuit
Fig. 5 I
CCH
/I
CCL
Test Circuit
V
CC
1.0 F
μ
1
2
3
I
OL
1.0 F
μ
I
F
V
CC
1.0 F
μ
V
OH
100 mA
1.0 F
μ
I
F
6
5
4
I
OH
V
CC
1.0 F
μ
V
OL
100 mA
SHIELD
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
V
CC
Fig. 6 UVLO Test Circuit
I
F
= 10 mA
V
CC
1.0 F
μ
V
O
> 5 V
1
2
3
6
5
4
SHIELD
V
CC
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 7 of 18
Jun 21, 2013
VCC
IF = 10 mA
10 kHz
50% DUTY
CYCLE
1.0 F
μ
VO
10 Ω
10 nF
tPHLtPLH
IF
VOUT
80%
50%
20%
trtf
VCC = 30 V
VCM = 1.5 kV
1.0 F
μ
A
B
VO
IF
VOH
26 V
1 V
VOL
VCM
0 V
VO
(Switch A: IF = 10 mA)
VO
(Switch B: IF = 0 mA)
Fig. 8 t
PLH
, t
PHL
, t
r
, t
f
Test Circuit and Wave Forms
Fig. 9 CMR Test Circuit and Wave Forms
tr
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
Fig. 7 I
FLH
Test Circuit
IF
VCC
1.0 F
μ
VO > 5 V
1
2
3
6
5
4
SHIELD
+
-
tr
1 500 V
10%
90%
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 8 of 18
Jun 21, 2013
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Ambient Temperature TA (°C)
Detector Power Dissipation PC (mW)
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature TA (°C)
Diode Power Dissipation PD (mW)
DIODE POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature TA (°C)
Threshold Input Current IFLH / IFHL (mA)
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
25 50 75 100 150
125
0
300
250
200
150
100
50
25 50 75 100 150
125
0
3
2
1
0
VCC = 30 V,
VEE = GND,
Vth = 5 V
−50 −25 100 12550 75025 150
Forward Current IF (mA)
Output Voltage VO (V)
OUTPUT VOLTAGE vs.
FORWARD CURRENT
1
0023
35
30
25
20
15
10
5
50
40
30
20
10
Forward Voltage VF (V)
Forward Current IF (mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
1.0
0.01
0.1
1
10
100
1.2 1.4 1.6 1.8 2.0 2.2 2.4
TA = 125°C
100°C
85°C
50°C
25°C
−20°C
−40°C
High Level Output Voltage – Supply
Voltage VOH – VCC (V)
High Level Output Current IOH (A)
HIGH LEVEL OUTPUT VOLTAGE – SUPPLY
VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT
0.0 0.5 1.0 1.5 2.52.0
0
−6
−5
−4
−3
−2
−1
TA = 25°C
TA = 125°C
TA = −40°C
IFLH
IFHL
VCC = 30 V,
VEE = GND
VCC = 30 V,
VEE = GND,
IF = 10 mA
Remark The graphs indicate nominal characteristics.
<R>
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 9 of 18
Jun 21, 2013
Forward Current I
F
(mA)
PROPAGATION DELAY TIME,
PULSE WIDTH DISTORTION
vs. FORWARD CURRENT
PROPAGATION DELAY TIME,
PULSE WIDTH DISTORTION
vs. SUPPLY VOLTAGE
Supply Voltage V
CC
(V)
Low Level Output Current I
OL
(A)
Low Level Output Voltage V
OL
(V)
LOW LEVEL OUTPUT VOLTAGE vs.
LOW LEVEL OUTPUT CURRENT
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion (PWD) t
PHL
– t
PLH
(ns)
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion (PWD) t
PHL
– t
PLH
(ns)
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion (PWD) t
PHL
– t
PLH
(ns)
6 8 10 12 14 16
175
150
125
100
75
50
25
0
t
PHL
PWD
t
PLH
15 20 25 30
175
150
125
100
75
50
25
0
t
PHL
PWD
t
PLH
PROPAGATION DELAY TIME,
PULSE WIDTH DISTORTION
vs. LOAD CAPACITANCE
Load Capacitance C
g
(nF)
10020
30 40 50
175
150
125
100
75
50
25
0
t
PHL
t
PLH
PWD
0.0 0.5 1.0 1.5 2.52.0
6
4
2
0
PROPAGATION DELAY TIME,
PULSE WIDTH DISTORTION
vs. LOAD RESISTANCE
0255075
175
150
125
100
75
50
25
0
t
PHL
PWD
t
PLH
Load Resistance R
g
(Ω)
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion (PWD) t
PHL
– t
PLH
(ns)
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion (PWD) t
PHL
– t
PLH
(ns)
PROPAGATION DELAY TIME,
PULSE WIDTH DISTORTION
vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
0−50 −25 25 50 75 100
175
150
125
100
75
50
25
0
t
PHL
t
PLH
125 150
PWD
V
CC
= 30 V,
V
EE
= GND,
I
F
= 0 mA
T
A
= 25°C
T
A
= 125°C
T
A
= −40°C
V
CC
= 30 V, V
EE
= GND,
R
g
= 10 Ω, C
g
= 10 nF,
f = 10 kHz, Duty cycle = 50%
V
EE
= GND, I
F
= 10 mA,
R
g
= 10 Ω, C
g
= 10 nF,
f = 10 kHz, Duty cycle = 50%
V
CC
= 30 V, V
EE
= GND,
I
F
= 10 mA, R
g
= 10 Ω,
f = 10 kHz, Duty cycle = 50%
V
CC
= 30 V, V
EE
= GND,
I
F
= 10 mA, C
g
= 10 nF,
f = 10 kHz, Duty cycle = 50%
V
CC
= 30 V, V
EE
= GND,
I
F
= 10 mA,
R
g
= 10 Ω, C
g
= 10 nF,
f = 10 kHz, Duty cycle = 50%
Remark The graphs indicate nominal characteristics.
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 10 of 18
Jun 21, 2013
Ambient Temperature T
A
(°C)
SUPPLY CURRENT vs.
AMBIENT TEMPERATURE
High Level Supply Current I
CCH
(mA),
Low Level Supply Current I
CCL
(mA)
−25 0 25 50 10075−50
2.5
1.5
2.0
1.0
0.5
0.0 125 150
I
CCH
I
CCL
Ambient Temperature T
A
(°C)
Supply Voltage V
CC
(V)
SUPPLY CURRENT vs.
SUPPLY VOLTAGE
High Level Supply Current I
CCH
(mA),
Low Level Supply Current I
CCL
(mA)
15 20 3025
2.5
2.0
0.0
0.5
1.0
1.5
I
CCH
(I
F
= 10 mA)
I
CCL
(I
F
= 0 mA)
High Level Output Voltage – Supply
Voltage V
OH
– V
CC
(V)
HIGH LEVEL OUTPUT VOLTAGE – SUPPLY
VOLTAGE vs. AMBIENT TEMPERATURE
0.0
−3.0
−2.5
−2.0
−1.5
−1.0
−0.5
−25 0 25 50 10075−50 125 150
−25 0 25 50 10075−50 125 150
−25 0 25 50 10075−50 125 150
−25 0 25 50 10075−50 125 150
Ambient Temperature T
A
(°C)
High Level Output Current I
OH
(A)
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Low Level Output Voltage V
OL
(V)
LOW LEVEL OUTPUT VOLTAGE vs.
AMBIENT TEMPERATURE
0.5
0.0
0.1
0.2
0.3
0.4
Ambient Temperature T
A
(°C)
Low Level Output Current I
OL
(A)
LOW LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
V
CC
= 30 V,
V
EE
= GND,
V
O
= OPEN
V
EE
= GND,
V
O
= OPEN
V
CC
= 30 V, V
EE
= GND,
I
F
= 10 mA, I
O
= –100 mA
V
CC
= 30 V, V
EE
= GND,
I
F
= 10 mA, I
O
= 100 mA
V
CC
= 30 V, V
EE
= GND,
I
F
= 10 mA, V
CC
–V
O
= 4 V
V
CC
= 30 V, V
EE
= GND,
I
F
= 10 mA, V
O
= 2.5 V
Remark The graphs indicate nominal characteristics.
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 11 of 18
Jun 21, 2013
OUTPUT VOLTAGE vs. SUPPLY VOLTAGE
Supply Voltage V
CC
– V
EE
(V)
Output Voltage V
O
(V)
0 5 10 15 20
14
12
10
8
6
4
2
0
UVLO
HYS
V
UVLO+
V
UVLO−
(12.3 V)
(11.0 V)
Remark The graphs indicate nominal characteristics.
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 12 of 18
Jun 21, 2013
TAPING SPECIFICATIONS (UNIT: mm)
PS9331L-E3
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
17.5±1.0
21.5±1.0
2.0±0.1
4.0±0.1
5.08±0.1
8.0±0.1
1.5
+0.1
–0
1.75±0.1
4.5 MAX.
7.5±0.1
10.2±0.1
16.0±0.3
0.35
1.5
+0.1
–0
4.05±0.1
Outline and Dimensions (Tape)
Tape Direction
Outline and Dimensions (Reel)
Packing: 2 000 pcs/reel
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 13 of 18
Jun 21, 2013
PS9331L2-E3
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
25.5±1.0
29.5±1.0
2.0±0.1
4.0±0.1
5.08±0.1
8.0±0.1
2.0
+0.1
–0
1.5
+0.1
–0
4.05±0.1 1.75±0.1
4.5 MAX.
0.35
11.5±0.1
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
Tape Direction
Packing: 2 000 pcs/reel
24.0±0.3
12.0±0.1
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 14 of 18
Jun 21, 2013
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
Part Number
PS9331L
PS9331L2
Lead Bending A
lead bending type (Gull-wing)
for long creepage distance (surface mount)
lead bending type (Gull-wing)
for surface mount 9.2
10.2
B
1.27
1.27
C
0.8
0.8
D
2.2
2.2
D
CB
A
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 15 of 18
Jun 21, 2013
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120 ± 30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output
transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 16 of 18
Jun 21, 2013
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 1.0
μ
F is used between VCC and GND near device. Also, ensure that the distance
between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close
to the input block pattern of the photocoupler.
If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT
output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics.
(If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to
the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the
range of the recommended operating conditions, and be sure to thoroughly evaluate operation.)
(3) Pin 2 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may
degrade the internal noise environment of the device.
Note: *1. NC: Non-Connection (No Connection).
3. Make sure the rise/fall time of the forward current is 0.5
μ
s or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/
μ
s or less.
5. Avoid storage at a high temperature and high humidity.
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 17 of 18
Jun 21, 2013
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 40/125/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.6 × UIORM., Pd < 5 pC
UIORM
Upr
1 130
1 808
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM., Pd < 5 pC
Upr 2 119 Vpeak
Highest permissible overvoltage UTR 8 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –40 to +125 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
PS9331L, PS9331L2
R08DS0111EJ0200 Rev.2.00 Page 18 of 18
Jun 21, 2013
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History PS9331L, PS9331L2 Data Sheet
Description
Rev. Date Page Summary
1.00 May 24, 2013 − First edition issued
2.00 Jun 21, 2013 pp.8 to 11 Addition of TYPICAL CHARACTERISTICS
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
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assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
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third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
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the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
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Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
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incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
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no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
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regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
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regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
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