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QEE113 Plastic Infrared Light Emitting Diode Features * * * * * * * * Description = 940 nm Package Type = Sidelooker Chip Material = GaAs Matched Photosensor: QSE113 Medium Wide Emission Angle, 50 Package Material: Clear Epoxy High Output Power Gray dot marking on the top side The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. Package Dimensions(1, 2) 0.175 (4.44) 0.087 (2.22) 0.050 (1.27) O0.065 (1.65) 0.200 (5.08) O0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE Schematic 0.020 (0.51) SQ. (2X) 0.100 (2.54) ANODE CATHODE 0.030 (0.76) 0.100 (2.54) NOM Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. (c) 2002 Fairchild Semiconductor Corporation QEE113 Rev. 2.2 www.fairchildsemi.com 1 QEE113 -- Plastic Infrared Light Emitting Diode May 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit TOPR Operating Temperature -40 to +100 C TSTG Storage Temperature -40 to +100 C (4, 5, 6) 240 for 5 sec C (4, 5) TSOL-I Soldering Temperature (Iron) TSOL-F Soldering Temperature (Flow) 260 for 10 sec C IF Continuous Forward Current 50 mA VR Reverse Voltage 5 V 100 mW PD (3) Power Dissipation Notes: 3. Derate power dissipation linearly 1.33 mW/C above 25C. 4. RMA flux is recommended. 5. Methanol or isopropyl alcohols are recommended as cleaning agents. 6. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical / Optical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter PE Peak Emission Wavelength TC Temperature Coefficient Conditions IF = 20 mA 21/2 Emission Angle IF = 100 mA VF Forward Voltage IF = 100 mA, tp = 20 ms TCVF Reverse Current VR = 5 V Radiant Intensity IF = 100 mA, tp = 20 ms Temperature Coefficient Rise Time tf Fall Time Cj Junction Capacitance (c) 2002 Fairchild Semiconductor Corporation QEE113 Rev. 2.2 Max. nm 0.3 nm/C 1.5 3 7.5 -0.7 IF = 100 mA VR = 0 V Unit 945 -2 lR tr Typ. 50 Temperature Coefficient IE TCIE Min. V mV/C 10 A 12 mW/sr %/C 800 ns 800 ns 14 pF www.fairchildsemi.com 2 QEE113 -- Plastic Infrared Light Emitting Diode Absolute Maximum Ratings 1.0 PE - PEAK EMISSION WAVELENGTH 975 NORMALIZED INTENSITY 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 700 750 800 850 900 950 1,000 IF = 20mA DC 970 965 960 955 950 945 940 935 1,050 0 10 20 (nm) Figure 1. Normalized Intensity vs. Wavelength Ie - NORMALIZED RADIANT INTENSITY Ie - NORMALIZED RADIANT INTENSITY 1 60 70 80 90 100 100 Normalized to: IF = 20mA Pulsed tPW = 20ms Duty Cycle = 4% TA = 25C 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 10 1000 0 10 20 30 40 50 60 70 80 90 100 TA - AMBIENT TEMPERTURE (C) IF - FORWARD CURRENT (mA) Figure 3. Normalized Radiant Intensity vs. Forward Current Figure 4. Normalized Radiant intensity vs. Ambient Temperature 1.55 3.5 IF Pulsed tPW = 20ms Duty Cycle = 4% TA = 25C VF - FORWARD VOLTAGE (V) VF - FORWARD VOLTAGE (V) 50 1.4 Normalized to: IF = 100mA Pulsed tPW = 20ms Duty Cycle = 4% TA = 25C 2.5 2.0 1.5 1.0 10 40 Figure 2. Peak Wavelength vs. Ambient Temperature 10 3.0 30 TA - AMBIENT TEMPERTURE (C) IF = 20mA Pulsed tPW = 20ms Duty Cycle = 4% 1.50 1.45 1.40 1.35 1.30 1.25 100 0 1000 Figure 5. Forward Voltage vs. Forward Current (c) 2002 Fairchild Semiconductor Corporation QEE113 Rev. 2.2 10 20 30 40 50 60 70 80 90 100 TA - AMBIENT TEMPERTURE (C) IF - FORWARD CURRENT (mA) Figure 6. Forward Voltage vs. Ambient Temperature www.fairchildsemi.com 3 QEE113 -- Plastic Infrared Light Emitting Diode Typical Performance Characteristics 90 80 70 120 60 130 50 140 40 150 30 160 20 10 170 180 1.0 IC (ON) - NORMALIZED COLLECTOR CURRENT 110 100 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0 1.0 1.0 Normalized to: d = 0 inch IF Pulsed tpw = 100s Duty Cycle = 0.1% VCC = 5V RL = 100 TA = 25C 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 LENS TIP SEPARATION (inches) Figure 7. Radiation Diagram (c) 2002 Fairchild Semiconductor Corporation QEE113 Rev. 2.2 Figure 8. Coupling Characteristics of QEE113 and QSE113 www.fairchildsemi.com 4 QEE113 -- Plastic Infrared Light Emitting Diode Typical Performance Characteristics (Continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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