UniFET TM FDB44N25 250V N-Channel MOSFET Features Description * 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. * Low gate charge ( typical 47 nC) * Low Crss ( typical 60 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. * Fast switching * 100% avalanche tested * Improved dv/dt capability D { D z G{ z z { G S S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed IDM Drain Current VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD Power Dissipation FDB44N25 Unit 250 V 44 26.4 A A 176 A 30 V (Note 2) 2055 mJ (Note 1) 44 A Repetitive Avalanche Energy (Note 1) 30.7 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 307 2.45 W W/C -55 to +150 C 300 C (Note 1) (TC = 25C) - Derate above 25C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit RJC Thermal Resistance, Junction-to-Case -- 0.41 C/W RJA* Thermal Resistance, Junction-to-Ambient* -- 40 C/W RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2005 Fairchild Semiconductor Corporation FDB44N25 Rev A 1 www.fairchildsemi.com FDB44N25 250V N-Channel MOSFET September 2005 Device Marking Device Package Reel Size Tape Width Quantity FDB44N25 FDB44N25TM D2-PAK 330mm 24mm 800 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Typ. Max Units 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25C -- 0.25 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.058 0.069 -- 32 -- S -- 2210 2870 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 22A gFS Forward Transconductance VDS = 40V, ID = 22A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 450 585 pF -- 60 90 pF -- 55 120 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 44A RG = 25 (Note 4, 5) VDS = 200V, ID = 44A VGS = 10V (Note 4, 5) -- 400 810 ns -- 85 180 ns -- 115 240 ns -- 47 61 nC -- 18 -- nC -- 24 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 44 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 44A -- -- 1.4 V trr Reverse Recovery Time -- 195 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 44A dIF/dt =100A/s -- 1.8 -- C (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 44A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDB44N25 Rev A www.fairchildsemi.com FDB44N25 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 2 10 ID, Drain Current [A] 2 10 ID, Drain Current [A] Figure 2. Transfer Characteristics 1 10 0 o 150 C 1 10 o 25 C o -55 C Notes : Notes : 10 1. VDS = 40V 2. 250 s Pulse Test 1. 250 s Pulse Test 2. TC = 25 0 -1 0 10 10 1 10 10 2 4 6 VDS, Drain-Source Voltage [V] 8 10 12 VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.125 2 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 10 0.100 0.075 VGS = 10V 0.050 VGS = 20V 0.025 Note : T = 25 1 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test J 0 0.000 0 25 50 75 100 125 10 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 Capacitances [pF] 5000 4000 3000 Coss Ciss Note ; 2000 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 Note : I = 44A D 0 -1 10 0 0 10 0 1 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FDB44N25 Rev A 10 www.fairchildsemi.com FDB44N25 250V N-Channel MOSFET Typical Performance Characteristics FDB44N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 Notes : 0.9 1. VGS = 0 V 2. ID = 250 A 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 Notes : 0.5 1. VGS = 10 V 2. ID = 22 A 0.0 -100 200 -50 0 50 100 o TJ, Junction Temperature [ C] 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 10 50 10 s 2 100 s 1 ms 10 ms 100 ms DC 1 10 40 ID, Drain Current [A] ID, Drain Current [A] 10 Operation in This Area is Limited by R DS(on) 0 10 Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C 3. Single Pulse 30 20 10 -2 10 0 1 10 0 25 2 10 10 50 75 VDS, Drain-Source Voltage [V] 100 125 150 TC, Case Temperature [ ] Z JC(t), Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 10 0 .0 2 0 .0 1 -2 N o te s : 1 . Z J C( t) = 0 .4 1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t) PDM s in g le p u ls e t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] 4 FDB44N25 Rev A www.fairchildsemi.com FDB44N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp tp 5 FDB44N25 Rev A VDS (t) VDD DUT 10V ID (t) Time www.fairchildsemi.com Preliminary FDB44N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FDB44N25 Rev A www.fairchildsemi.com FDB44N25 250V N-Channel MOSFET Mechanical Dimensions D2-PAK 7 FDB44N25 Rev A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16