©2005 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FDB44N25 Rev A
FDB44N25 250V N-Ch anne l MOSFET
September 200 5
UniFET TM
FDB44N25
250V N-Channel MOS FET
Features
• 44A, 250V, RDS(on) = 0.069Ω @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteris ti cs
{
{
{z
z
z
{
{
{z
z
z
S
D
G
GS
D
Symbol Parameter FDB44N25 Unit
VDSS Drain-Source Voltage 250 V
IDDrain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) 44
26.4 A
A
IDM Drain Current - Pulsed (Note 1) 176 A
VGSS Gate-Source voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 2055 mJ
IAR Avalanche Current (Note 1) 44 A
EAR Repetitive Avalanche Energy (Note 1) 30.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C)
- Derate above 25°C307
2.45 W
W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Min. Max. Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.41 °C/W
RθJA* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2www.fairchildsemi.com
FDB44N25 Rev A
FDB44N25 250V N-Ch anne l MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25Ω, Starting TJ = 25 °C
3. ISD ≤ 44A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDB44N25 FDB44N25TM D2-PAK 330mm 24mm 800
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, Referenced to 25°C--0.25--V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C--
-- --
-- 1
10 µA
µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
RDS(on) Static Drain-Source
On-Resistance VGS = 10V, ID = 22A -- 0.058 0.069 Ω
gFS Forward Transconductance VDS = 40V, ID = 22A (Note 4) -- 32 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V,
f = 1.0MHz -- 2210 2870 pF
Coss Output Capacitance -- 450 585 pF
Crss Reverse Transfer Capacitance -- 60 90 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125V, ID = 44A
RG = 25Ω
(Note 4, 5)
-- 55 120 ns
trTurn-On Rise Time -- 400 810 ns
td(off) Turn-Off D e lay Time -- 85 180 ns
tfTurn-Off Fal l Time -- 11 5 24 0 ns
QgTota l Gate Cha r ge VDS = 200V, ID = 44A
VGS = 10V
(Note 4, 5)
-- 47 61 nC
Qgs Gate-Source Charge -- 18 -- nC
Qgd Gate-Drain Charge -- 24 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 44 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 44A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 44A
dIF/dt = 100A/ µs (Note 4) -- 195 -- ns
Qrr Reverse Recovery Charge -- 1.8 -- µC
3www.fairchildsemi.com
FDB44N25 Rev A
FDB44N25 250V N-Ch anne l MOSFET
Typical Perf ormance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2 4 6 8 10 12
100
101
102
150oC
25oC
-55oC
Notes :
※
1. VDS = 40V
2. 250µs Pulse Test
ID, Dr ain Current [A]
VGS, Gate-Source Voltage [V]
10-1 100101
100
101
102 VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bott om : 5.5 V
Notes :
※
1. 250µs Pulse Test
2. TC = 25
℃
ID, Drain Cur rent [A]
VDS, Drain- So urc e Vo l tag e [V]
0 25 50 75 100 125 150
0.000
0.025
0.050
0.075
0.100
0.125
VGS = 20V
VGS = 10V
No te : T
※
J = 25
℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.20.40.60.81.01.21.41.61.8
100
101
102
150
℃
Note s :
※
1. VGS = 0V
2. 250µs Puls e T e st
25
℃
IDR, Reverse Dr ain Current [A]
VSD, Source-Drain voltage [V]
10-1 100101
0
1000
2000
3000
4000
5000
6000 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Note ;
※
1. V GS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
VDS = 125V
VDS = 50V
VDS = 200V
No te : I
※
D = 44A
VGS, Gate-Source Voltage [V]
QG, T o tal Ga te Ch a r g e [n C]
4www.fairchildsemi.com
FDB44N25 Rev A
FDB44N25 250V N-Ch anne l MOSFET
Typical Perf ormance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
N o tes :
※
1. V GS = 0 V
2. ID = 250 µA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Tem perature [oC] -100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
N o te s :
※
1 . V GS = 10 V
2 . ID = 22 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102
10-2
10-1
100
101
102
103
100 ms
1 ms
10 µs
DC
10 ms
100 µs
Operation in This Area
is Limited by R DS(on)
No tes :
※
1 . T C = 25 oC
2 . T J = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V] 25 50 75 100 125 150
0
10
20
30
40
50
ID, Drain Current [A]
TC, Cas e Temperature [ ]
℃
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
Note s :
※
1 . ZθJC
(t) = 0 .41 /W Max.
℃
2 . Duty Fa c t o r, D=t1/t2
3 . TJM - T C = PDM * Z θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Thermal Response
t1, S q u a re W a ve Puls e D u ra tio n [s ec ]
t1
PDM
t2
5www.fairchildsemi.com
FDB44N25 Rev A
FDB44N25 250V N-Ch anne l MOSFET
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K
Ω
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K
Ω
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Tes t Circuit & Waveforms
6www.fairchildsemi.com
FDB44N25 Rev A
FDB44N25 250V N-Ch anne l MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Per io d
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Per io d
--------------------------
D = Gate Pulse Width
Gate Pulse Per io d
--------------------------
Preliminary
7www.fairchildsemi.com
FDB44N25 Rev A
FDB44N25 250V N-Ch anne l MOSFET
Mechanical Dimensions
D2-PAK
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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