A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS (PER SIDE) MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 30 V
BVCBO IC = 50 mA 45 V
BVEBO IE = 10 mA 3.0 V
hFE VCE = 5.0 V IC = 3.0 A 10 100 ---
COB VCB = 28 V f = 1.0 MHz 72 pF
GPVCE = 26.5 V IC = 2 X 1.6 A f = 860 MHz 8.0 9.0 dB
GpVCE = 28 V IC = 2 X 250 mA f = 860 MHz
Pout = 50 W 7.0 8.0 dB
IMD3VCE = 26.5 V Pout = 25 W f = 860 MHz
VISION = -8.0dB SOUND = -10 dB CHROMA = -16dB -45 dBc
NPN SILICON RF POWER TRANSISTOR
SD1490
DESCRIPTION:
The ASI SD1490 is a Common
Emitter Device Designed for Class A
and AB Amplifier Applications in
Television Band IV & V Transmitters.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Internal Matching
MAXIMUM RATINGS
IC8.0 A
VCB 45 V
PDISS 155 W @ TC = 25 OC
TJ-55 OC to +200 OC
TSTG -55 OC to +200 OC
θθJC 1.15 OC/W
PACKAGE STYLE .450 BAL FLG.(A)
1 = Collector 2 = Base
3 = Emitter
