UNISONIC TECHNOLOGIES CO., LTD
MJE2955T PNP SILICON TRANSISTOR
www.unisonic.com.tw 1
Copyright © 2012 Unisonic Technologies Co., LTD QW-R203-012,D
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MJE2955T is designed for general purpose of amplifier
and switching applicati ons.
TO-252
1
TO-220
1
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
MJE2955TL-TA3-T MJE2955TG-TA3-T TO-220 B C E Tube
MJE2955TL-TN3-R MJE2955TG-TN3-R TO-252 B C E Tape Reel
Note: B:BASE C: COLLECTOR E: EMITTER
MJE2955T PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2
www.unisonic.com.tw QW-R203-012,D
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -70 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Collector current IC -10 A
Base Current IB -6 A
Total Power Dissipation (TA=25°C) PC 75 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device coul d be permanently damaged.
Absolute maximum ratings are stress ratings only and functional devic e operation is not implied.
2. The device is guaranteed to meet performance sp ecification within 0°C ~70°C
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCEO I
C=-200mA -60 V
Collector-Base Breakdown Voltage BVCBO I
C=-10mA -70 V
Emitter-Base Breakdown Voltage BVEBO I
E=-10mA -5 V
Collector Cut-Off Current ICBO V
CB=-70V -1 mA
ICEO V
CE=-30V -700 μA
ICEX V
CE=-70V, VEB(OFF)=-1.5V -1 mA
Emitter Cut-Off Current IEBO V
EB=-5V -5 mA
Collector-Emitter Saturation Voltage VCE(SAT)1 I
C=-4A, IB=-0.4A -1.1 V
VCE(SAT)2 I
C=-10A, IB=-3.3A -8.0
Baser-Emitter on Voltage VBE(ON) V
CE=-4V, IC=-4A -1.8 V
DC Current Gain hFE1 I
C=-4A, VCE=-4V 20 100
hFE2 I
C=-10A, VCE=-4V 5
Current Gain Bandwidth Product fT V
CE=-10V, IC=-0.5A, f=1MHz 2 MHZ
MJE2955T PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3
www.unisonic.com.tw QW-R203-012,D
TYPICAL CHARACTERISTICS
DC current gain, h
FE
Saturation voltage, V
BE(SAT)
, V
CE(sat)
(V)
Collector current, I
C
(A)
100µs
Power dissipatioan, P
C
(W)
MJE2955T PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4
www.unisonic.com.tw QW-R203-012,D
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
