C3M0120090D Silicon Carbide Power MOSFET TM C3M MOSFET Technology VDS 900 V ID @ 25C 23 A RDS(on) 120 m N-Channel Enhancement Mode Features * * * * * Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits * * * * Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications * * * * * Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Lighting Part Number Package Marking C3M0120090D TO-247-3 C3M0120090 Maximum Ratings (TC = 25 C unless otherwise specified) Symbol Parameter Unit Test Conditions 900 V VGS = 0 V, ID = 100 A Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25C Fig. 19 ID Continuous Drain Current ID(pulse) PD TJ , Tstg 23 15 A VGS = 15 V, TC = 100C Pulsed Drain Current 50 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 97 W TC=25C, TJ = 150 C Fig. 20 -55 to +150 C Operating Junction and Storage Temperature TL Solder Temperature 260 C Md Mounting Torque 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0120090D Rev. A , 03-2017 1.6mm (0.063") from case for 10s M3 or 6-32 screw Electrical Characteristics (TC = 25C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 900 1.8 2.1 3.5 1.6 Unit Test Conditions V VGS = 0 V, ID = 100 A V VDS = VGS, ID = 3 mA V VDS = VGS, ID = 3 mA, TJ = 150C IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 120 155 RDS(on) Drain-Source On-State Resistance 170 7.7 gfs Transconductance Ciss Input Capacitance 350 Coss Output Capacitance 40 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 9 EON Turn-On Switching Energy (Body Diode FWD) 170 EOFF Turn Off Switching Energy (Body Diode FWD) 25 td(on) Turn-On Delay Time 27 Rise Time 10 Turn-Off Delay Time 25 Fall Time 8 Internal Gate Resistance 16 tr td(off) tf RG(int) Qgs Gate to Source Charge 4.8 Qgd Gate to Drain Charge 5.0 Qg Total Gate Charge 17.3 VGS = 15 V, ID = 15 A m VGS = 15 V, ID = 15 A, TJ = 150C VDS= 20 V, IDS= 15 A S 6.7 Note VDS= 20 V, IDS= 15 A, TJ = 150C f = 1 MHz VAC = 25 mV J Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 VGS = 0 V, VDS = 600 V pF Fig. 11 Fig. 16 J VDS = 400 V, VGS = -4 V/15 V, ID = 15 A, RG(ext) = 2.5, L= 142 H, TJ = 150C Fig. 26, 29 ns VDD = 400 V, VGS = -4 V/15 V ID = 15 A, RG(ext) = 2.5 , Timing relative to VDS Inductive load Fig. 27, 29 f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 15 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 4.8 V VGS = -4 V, ISD = 7.5 A 4.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 C Note Fig. 8, 9, 10 Continuous Diode Forward Current 21 A VGS = -4 V Note 1 Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 7.5 A, VR = 400 V dif/dt = 900 A/s, TJ = 150 C Note 1 trr Reverse Recover time 24 ns Qrr Reverse Recovery Charge 115 nC Irrm Peak Reverse Recovery Current 6.2 A Thermal Characteristics Symbol Parameter Max. RJC Thermal Resistance from Junction to Case 1.3 RJA Thermal Resistance From Junction to Ambient 40 Unit Test Conditions C/W Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0120090D Rev. A , 03-2017 Note Fig. 21 Typical Performance 45 40 VGS = 15 V 35 VGS = 13 V 30 VGS = 11 V 25 20 VGS = 9 V 15 10 VGS = 7 V 5 0 VGS = 15 V Conditions: TJ = 25 C tp = < 200 s 40 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 45 Conditions: TJ = -55 C tp = < 200 s VGS = 13 V 35 VGS = 11 V 30 25 20 VGS = 9 V 15 10 VGS = 7 V 5 0 2 4 6 8 10 0 11 0 2 4 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 C 45 2.5 10 11 Conditions: IDS = 15 A VGS = 15 V tp < 200 s VGS = 13 V 2.0 35 VGS = 11 V 30 25 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 40 8 Figure 2. Output Characteristics TJ = 25 C VGS = 15 V Conditions: TJ = 150 C tp = < 200 s 6 Drain-Source Voltage, VDS (V) VGS = 9 V 20 15 VGS = 7 V 10 1.5 1.0 0.5 5 0 0 2 4 6 8 10 0.0 11 -50 -25 0 Drain-Source Voltage, VDS (V) Figure 3. Output Characteristics TJ = 150 C 250 300 250 TJ = 150 C 175 150 TJ = -55 C 125 TJ = 25 C 100 75 50 25 0 100 125 150 225 200 VGS = 11 V 175 150 VGS = 13 V 125 100 VGS = 15 V 75 50 25 0 5 10 15 20 25 30 Drain-Source Current, IDS (A) 35 Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 15 A tp < 200 s 275 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 200 50 Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 s 225 25 Junction Temperature, TJ (C) C3M0120090D Rev. A , 03-2017 40 45 0 -50 -25 0 25 50 75 Junction Temperature, TJ (C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 35 30 TJ = 25 C 20 -6 -5 -4 -3 -2 -1 0 0 -5 TJ = 150 C 25 -7 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -8 Conditions: VDS = 20 V tp < 200 s TJ = -55 C 15 10 VGS = -4 V -10 VGS = 0 V -15 -20 VGS = -2 V -25 -30 5 0 -35 0 2 4 6 8 10 12 Conditions: TJ = -55C tp < 200 s 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -6 -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 C -1 0 0 -8 -7 -6 -5 -4 -3 -2 -1 -10 VGS = 0 V -15 VGS = -2 V -20 -25 -30 VGS = -4 V Drain-Source Voltage VDS (V) -15 -20 VGS = -2 V -25 -30 -35 Conditions: TJ = 150C tp < 200 s -40 -45 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 C 3.0 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 1.5 1.0 0.5 -25 0 25 50 75 Junction Temperature TJ (C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 15 A IGS = 10 mA VDS = 400 V TJ = 25 C 12 -50 C3M0120090D Rev. A , 03-2017 -45 16 2.0 0.0 -40 Figure 10. Body Diode Characteristic at 150 C Conditons VGS = VDS IDS = 3 mA 2.5 0 -10 VGS = 0 V -35 Conditions: TJ = 25C tp < 200 s 0 -5 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -5 VGS = -4 V -45 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -8 -40 150 8 4 0 -4 0 4 8 12 16 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 20 Typical Performance -5 -4 -3 -2 -1 0 0 Drain-Source Current, IDS (A) VGS = 0 V -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V -6 -5 -4 -3 -2 -1 0 -10 VGS = 5 V VGS = 10 V -20 VGS = 15 V -30 Conditions: TJ = -55 C tp < 200 s -30 Conditions: TJ = 25 C tp < 200 s -40 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 C -6 -5 -4 -3 -2 -1 0 VGS = 0 V Drain-Source Current, IDS (A) -6 -40 Figure 14. 3rd Quadrant Characteristic at 25 C 0 20 0 Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V VGS = 10 V -20 VGS = 15 V Stored Energy, EOSS (J) 15 -10 10 5 -30 Conditions: TJ = 150 C tp < 200 s Drain-Source Voltage VDS (V) 0 -40 0 100 Figure 15. 3rd Quadrant Characteristic at 150 C 1000 500 600 700 800 900 1000 Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) Capacitance (pF) 10 400 Drain to Source Voltage, VDS (V) 1000 Coss 100 300 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss 200 Crss 100 Coss 10 Crss 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C3M0120090D Rev. A , 03-2017 200 1 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V) 800 900 Typical Performance 120 Conditions: TJ 150 C Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 25 20 15 10 5 0 -55 -30 -5 20 45 70 Case Temperature, TC (C) 95 120 Conditions: TJ 150 C 100 80 60 40 20 0 145 -55 1 0.5 0.3 0.1 100E-3 0.05 0.02 0.01 10E-3 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 0 ETotal EOn 5 10 15 Drain to Source Current, IDS (A) 20 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 C3M0120090D Rev. A , 03-2017 0.1 1 10 100 200 1000 ETotal 150 EOn 100 50 EOff 0 Conditions: TC = 25 C D = 0, Parameter: tp Conditions: TJ = 25 C VDD = 400 V RG(ext) = 2.5 VGS = -4V/+15 V FWD = C3M0120090D L = 142 H 250 100 10 s 100 s Figure 22. Safe Operating Area 300 200 145 0.10 350 300 120 Drain-Source Voltage, VDS (V) Switching Loss (uJ) Switching Loss (uJ) 400 95 100 ms 1 Conditions: TJ = 25 C VDD = 600 V RG(ext) = 2.5 VGS = -4V/+15 V FWD = C3M0120090D L = 142 H 500 70 1.00 Figure 21. Transient Thermal Impedance (Junction - Case) 600 45 1 ms SinglePulse 10E-6 20 Case Temperature, TC (C) Limited by RDS On 10.00 0.01 1E-6 -5 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature -30 25 0 EOff 0 5 10 15 Drain to Source Current, IDS (A) 20 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 25 Typical Performance 250 Switching Loss (uJ) 250 Conditions: TJ = 25 C VDD = 400 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0120090D L = 142 H 200 ETotal EOn 150 100 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Conditions: TJ = 25 C VDD = 400 V IDS = 15 A VGS = -4V/+15 V FWD = C3M0120090D L = 142 H 40 Times (ns) 35 30 150 EOn 100 EOff 20 25 0 0 25 50 75 100 125 Junction Temperature, TJ (C) td(on) td(off) 25 20 15 tr 10 tf 5 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0120090D Rev. A , 03-2017 20 150 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 45 ETotal 50 EOff 50 0 Conditions: IDS = 15 A VDD = 400 V RG(ext) = 2.5 VGS = -4V/+15 V FWD = C3M0120090D L = 142 H 200 Switching Loss (uJ) 300 25 Figure 28. Switching Times Definition 175 Test Circuit Schematic Q1 RG C3M0120090D VGS= - 4V VDC RG Q2 C3M0120090D D.U.T Figure 29. Clamped Inductive Switching Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0120090D Rev. A , 03-2017 Package Dimensions POS Package TO-247-3 A T V U W Pinout Information: * * * Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 9 C3M0120090D Rev. A , 03-2017 Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 OP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9 11 9 11 U 9 11 9 11 V 2 8 2 8 W 2 8 2 8 Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links * * * C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright (c) 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0120090D Rev. A, 03-2017 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power