PD-9.896 International Rectifier IRF520S HEXFET Power MOSFET Surface Mount @ Available in Tape & Reel D _ @ Dynamic dv/dt Rating Voss = 100V @ Repetitive Avalanche Rated @ 175C Operating Temperature Fast Switching @ Ease of Paralleling Rpsvon) = 0.270 s Ip = 9.2A Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. SMD-220 Absolute Maximum Ratings Parameter | Max. Units In@ Tc=25C | Continuous Drain Current, Vas @10V_ |. 9.2 Ip @ Tc = 100C | Continuous Drain Current, Vas @ 10 V 6.5 A lpm Pulsed Drain Current 37 Pp @ Tc =25C_ | Power Dissipation 60 Ww Pp @ Ta= 25C | Power Dissipation (PCB Mount)** 3.7 Linear Derating Factor 0.40 Were Linear Derating Factor (PCB Mount)** 0.025 Vas Gate-to-Source Voltage +20 v Eas Single Pulse Avalanche Energy @ 200 mJ lar Avalanche Current 9.2 A Ear Repetitive Avalanche Energy 6.0 mJ dv/dt Peak Diode Recovery dv/di 5.5 Vins Ti, Tsta Junction and Storage Temperature Range -55 to +175 C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units | Rac Junction-to-Case _ 2.5 Rasa Junction-to-Ambient (PCB mount)** _ _ 40 Cw Rea Junction-to-Ambient _ _ 62 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 131IRF520S Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vier)oss Drain-to-Source Breakdown Voltage 100 | _ V_ | Ves=0V, Ip= 25014 AVeryoss/ATu| Breakdown Voltage Temp. Coefficient - | 0.13 | | V/C | Reference to 25C, lp= 1mA Roston) Static Drain-to-Source On-Resistance = | 0.27 | Q | Vas=10V, Ip=5.5A @ Vasith) Gate Threshold Voltage 2.0 _ 4.0 V__| Vos=Vas, In= 250nA Os Forward Transconductance 2.7 ~ ~ S| Vos=50V, Ip=5.5A @ . _ 25 Vps=100V, Vas=0V loss Drain-to-Source Leakage Current = 1350 MA Vos=80V, Ves=0V, Ty=150C lass Gate-to-Source Forward Leakage _ 100 nA Vas=20V Gate-to-Source Reverse Leakage _ | -100 Ves=-20V Qg Total Gate Charge _ _ 16 Ip=9.2A Qgs Gate-to-Source Charge | | 44 |] nC | Vps=80v Qoa Gate-to-Drain (Miller") Charge - _ 7.7 Vaes=10V See Fig. 6 and 13 @ taion) Turn-On Delay Time | 88 = Vpp=50V t Rise Time _ 30 _ ns. Ip=9.2A tacot Turn-Off Delay Time = 19 _ Re=18Q tr Fall Time _ 20 _ Rp=5.2Q See Figure 10 Lo Internal Drain inductance | 45 _ e nO oad ) g nH | from package (= Ls Internal Source Inductance | 754) and center of die contact 8 Ciss Input Capacitance |; 360 _ Vas=0V Coss Output Capacitance | 150; PF | Vpg=25V Ciss Reverse Transfer Capacitance _ 34 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 92 MOSFET symbol D (Body Diode) , A showing the Ism Pulsed Source Current _. _ 37 integral reverse (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 1.8 Vs | Ty=25C, Is=9.2A, Vas=0V tr Reverse Recovery Time _ 110 | 260 ns | Ty=25C, Ir=9.2A Qn Reverse Recovery Charge | 053] 1.3 | wC | di/dt=100A/us ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: Repetitive rating; pulse width limited by Isps9.2A, di/dts110A/us, VopsV(BR)Dss, max. junction temperature (See Figure 11) Tys175C Vpp=25V, starting Ty=25C, L=3.5mH Pulse width < 300 ys; duty cycle <2%. Re=25Q, |as=9.2A (See Figure 12) 132lp, Drain Current (Amps) Ip, Drain Current (Amps) 20us PULSE WIDTH Tr = 25C 107 Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25C Vpg = 50V 20us PULSE WIDTH Vas, Gate-to-Source Voltage (voits) Fig 3. Typical Transfer Characteristics Rosion), Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRF520S 20us WIDTH To = 175C 107 Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175C Vee = -40 - 1 1401 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 133IRF520S 20 Cgs + Cg Cds SHORTED Cgg + an S Bor) ro a Capacitance (pF) Vag, Gate-to-Source Voltage (volts) FOR TEST CIACUIT SEE FIGUAE 13 Coss 0 4 8 12 416 20 Vos, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typica! Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage so! 103 Ss 5 Q E a < 2 102 S z = 10 = 10 4 os < @ g o a * a a} e L 2 5 8 T, = = 0. Veg = OV 2 Tye 175C 0.4 pe 0 . . . 2 0.4 2 5 4 2 5 40 2 6 402 2 5 104 Vgp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 134Ip, Drain Current (Amps) Fig 9. Maximum Drain Current Vs. Case Temperature 410 o 9 wv 4 Q c a wn o cr @ E O.4 o pom Ke 107@ 10-5 1074 1073 Fig 11. 4 Tc, Case Temperature (C) IRF520S Pulse Width < tps Duty Factor < 0.1% 10% Ves td(on) tr fafotfy tf Fig 10b. Switching Time Waveforms . DUTY FACTOR, O=ty/to . PEAK T, x + o.4 1 10 ty, Rectangular Pulse Duration (seconds) Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF520S Vary tp to obtain Vps > required las Eas, Single Pulse Energy (mJ) = 26V Vps 25 50 75 100 125 150175 Starting Ty, Junction Temperature(C) AS Oe Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current ___Gurrent Regulator [Same Type as D.U-T. I { 50K . q lyev EF t | | > SUF I wvfo ee I Gas ++ Sap y Ve Ip Charge > Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1507 Appendix C: Part Marking Information See page 1515 Inte 7 n | Appendix D: Tape & Reel Information See page 1519 Tiernationa 136